Overview
The SBC847CDW1T1G is a dual NPN bipolar junction transistor (BJT) produced by onsemi. It is designed for general-purpose amplifier applications and is housed in the SOT-363/SC-88 package, which is suitable for low power surface mount applications. This transistor is part of onsemi's family of general-purpose and low VCE(sat) transistors, making it versatile for various electronic circuits.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 45 | V |
| Collector-Base Voltage | VCBO | 50 | V |
| Emitter-Base Voltage | VEBO | 6.0 | V |
| Collector Current - Continuous | IC | 100 | mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | V |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.7 | V |
| Base-Emitter Voltage | VBE(on) | 0.66 | V |
| DC Current Gain | hFE | 420 - 800 | |
| Current-Gain Bandwidth Product | fT | 100 | MHz |
Key Features
- Dual NPN bipolar junction transistors in a single SOT-363/SC-88 package.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- S and NSV prefixes available for automotive and other applications requiring unique site and control change requirements; AEC-Q101 Qualified and PPAP Capable.
- Low VCE(sat) for efficient operation.
- High DC current gain (hFE) for reliable amplifier performance.
Applications
- General-purpose amplifier applications.
- Automotive electronics requiring AEC-Q101 qualification.
- Surface mount applications where low power and compact size are essential.
- Various electronic circuits requiring dual NPN transistors.
Q & A
- What is the SBC847CDW1T1G transistor used for?
The SBC847CDW1T1G is used for general-purpose amplifier applications.
- What package type does the SBC847CDW1T1G come in?
The SBC847CDW1T1G is housed in the SOT-363/SC-88 package.
- What are the maximum collector-emitter and collector-base voltages for the SBC847CDW1T1G?
The maximum collector-emitter voltage (VCEO) is 45 V, and the maximum collector-base voltage (VCBO) is 50 V.
- Is the SBC847CDW1T1G RoHS compliant?
- What is the typical DC current gain (hFE) of the SBC847CDW1T1G?
The typical DC current gain (hFE) ranges from 420 to 800.
- What is the collector-emitter saturation voltage (VCE(sat)) of the SBC847CDW1T1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 V.
- Is the SBC847CDW1T1G suitable for automotive applications?
- What is the current-gain bandwidth product (fT) of the SBC847CDW1T1G?
The current-gain bandwidth product (fT) is 100 MHz.
- What is the maximum continuous collector current (IC) of the SBC847CDW1T1G?
The maximum continuous collector current (IC) is 100 mA.
- What are the base-emitter saturation and base-emitter turn-on voltages for the SBC847CDW1T1G?
The base-emitter saturation voltage (VBE(sat)) is 0.7 V, and the base-emitter turn-on voltage (VBE(on)) is 0.66 V.
