Overview
The SBC846BPDW1T1G is a dual general-purpose transistor from onsemi, part of the BC846BPDW1, BC847BPDW1, and BC848CPDW1 series. These transistors are designed for low power surface mount applications and are housed in the SOT-363/SC-88 package. They are suitable for various general-purpose amplifier applications and are AEC-Q101 qualified, making them suitable for automotive and other applications requiring unique site and control change requirements. The devices are Pb-free, halogen-free/BFR-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage (NPN) | VCEO | 65 | V |
| Collector-Base Voltage (NPN) | VCBO | 80 | V |
| Emitter-Base Voltage | VEBO | 6.0 | V |
| Collector Current - Continuous | IC | 100 | mAdc |
| Collector Current - Peak | ICM | 200 | mAdc |
| Collector-Emitter Breakdown Voltage (IC = 10 mA) | V(BR)CEO | 65 | V |
| DC Current Gain (IC = 10 mA, VCE = 5.0 V) | hFE | 200 - 420 | |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | 0.024 - 0.25 | V |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | 0.7 - 0.9 | V |
| Current-Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | 100 | MHz |
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | 4.5 | pF |
| Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) | NF | 10 | dB |
Key Features
- Suitable for general-purpose amplifier applications.
- Housed in SOT-363/SC-88 package for low power surface mount applications.
- AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- High collector-emitter breakdown voltage and collector-base breakdown voltage.
- Low collector-emitter saturation voltage and base-emitter saturation voltage.
- High current-gain bandwidth product.
Applications
- General-purpose amplifier applications.
- Automotive electronics.
- Consumer electronics.
- Industrial control systems.
- Low power surface mount applications.
Q & A
- What is the collector-emitter voltage rating for the SBC846BPDW1T1G transistor?
The collector-emitter voltage rating for the SBC846BPDW1T1G transistor is 65 V.
- What is the package type of the SBC846BPDW1T1G transistor?
The SBC846BPDW1T1G transistor is housed in the SOT-363/SC-88 package.
- Is the SBC846BPDW1T1G transistor RoHS compliant?
- What is the maximum continuous collector current for the SBC846BPDW1T1G transistor?
The maximum continuous collector current for the SBC846BPDW1T1G transistor is 100 mA.
- What is the typical DC current gain for the SBC846BPDW1T1G transistor?
The typical DC current gain for the SBC846BPDW1T1G transistor is between 200 and 420.
- What is the collector-emitter saturation voltage for the SBC846BPDW1T1G transistor?
The collector-emitter saturation voltage for the SBC846BPDW1T1G transistor is between 0.024 and 0.25 V.
- What is the current-gain bandwidth product for the SBC846BPDW1T1G transistor?
The current-gain bandwidth product for the SBC846BPDW1T1G transistor is 100 MHz.
- What is the output capacitance of the SBC846BPDW1T1G transistor?
The output capacitance of the SBC846BPDW1T1G transistor is 4.5 pF.
- What is the noise figure for the SBC846BPDW1T1G transistor?
The noise figure for the SBC846BPDW1T1G transistor is 10 dB.
- What are the typical applications of the SBC846BPDW1T1G transistor?
The SBC846BPDW1T1G transistor is typically used in general-purpose amplifier applications, automotive electronics, consumer electronics, and industrial control systems.
