Overview
The BC847AS-AU_R1_000A1 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Panjit International Inc. This transistor is part of the BC847 series and is designed for a wide range of amplifier applications. It features an epitaxial silicon, planar design and is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. The transistor is lead-free and compliant with EU RoHS 2.0, and it uses a green molding compound as per IEC 61249 standard.
Key Specifications
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Collector - Emitter Voltage | VCEO | 45 | V |
| Collector - Base Voltage | VCBO | 50 | V |
| Emitter - Base Voltage | VEBO | 6.0 | V |
| Collector Current - Continuous | IC | 100 | mA |
| Peak Collector Current | ICM | 200 | mA |
| Max Power Dissipation | PTOT | 250 | mW |
| Junction Temperature | TJ | -55 to 150 | °C |
| Storage Temperature | TSTG | -55 to 150 | °C |
| DC Current Gain (hFE) @ IC=10uA, VCE=5V | hFE | 110 - 290 | |
| DC Current Gain (hFE) @ IC=2mA, VCE=5V | hFE | 200 - 450 | |
| Collector - Emitter Saturation Voltage @ IC=10mA, IB=0.5mA | VCE(SAT) | 0.25 - 0.6 | V |
| Base - Emitter Saturation Voltage @ IC=10mA, IB=0.5mA | VBE(SAT) | 0.7 - 0.9 | V |
| Base - Emitter Turn On Voltage @ IC=2mA, VCE=5V | VBE(ON) | 0.58 - 0.66 | V |
| Collector - Base Capacitance @ VCB=10V, f=1MHz | CBO | 4.5 | pF |
Key Features
- General purpose amplifier applications
- NPN epitaxial silicon, planar design
- Collector current IC = 100mA
- AEC-Q101 qualified for automotive use
- Lead-free and compliant with EU RoHS 2.0
- Green molding compound as per IEC 61249 standard
- SOT-363 package
- Solderable terminals per MIL-STD-750, Method 2026
Applications
The BC847AS-AU_R1_000A1 transistor is suitable for a variety of general-purpose amplifier applications, including but not limited to:
- Audio amplifiers
- Switching circuits
- Automotive electronics
- Industrial control systems
- Consumer electronics
Q & A
- What is the collector-emitter voltage (VCEO) of the BC847AS-AU_R1_000A1 transistor?
The collector-emitter voltage (VCEO) is 45V.
- What is the maximum collector current (IC) of the BC847AS-AU_R1_000A1 transistor?
The maximum collector current (IC) is 100mA.
- Is the BC847AS-AU_R1_000A1 transistor AEC-Q101 qualified?
Yes, the BC847AS-AU_R1_000A1 transistor is AEC-Q101 qualified, making it suitable for automotive applications.
- What is the package type of the BC847AS-AU_R1_000A1 transistor?
The package type is SOT-363.
- What is the maximum power dissipation (PTOT) of the BC847AS-AU_R1_000A1 transistor?
The maximum power dissipation (PTOT) is 250mW.
- What is the junction temperature range (TJ) of the BC847AS-AU_R1_000A1 transistor?
The junction temperature range (TJ) is -55 to 150°C.
- Is the BC847AS-AU_R1_000A1 transistor lead-free and RoHS compliant?
Yes, the transistor is lead-free and compliant with EU RoHS 2.0.
- What is the typical DC current gain (hFE) of the BC847AS-AU_R1_000A1 transistor at IC=10uA, VCE=5V?
The typical DC current gain (hFE) at IC=10uA, VCE=5V is between 110 and 290.
- What is the collector-emitter saturation voltage (VCE(SAT)) of the BC847AS-AU_R1_000A1 transistor at IC=10mA, IB=0.5mA?
The collector-emitter saturation voltage (VCE(SAT)) at IC=10mA, IB=0.5mA is between 0.25 and 0.6V.
- What is the base-emitter turn-on voltage (VBE(ON)) of the BC847AS-AU_R1_000A1 transistor at IC=2mA, VCE=5V?
The base-emitter turn-on voltage (VBE(ON)) at IC=2mA, VCE=5V is between 0.58 and 0.66V.
