Overview
The SBC847BPDW1T3G is a dual general-purpose transistor from onsemi, part of the BC846BPDW1, BC847BPDW1, and BC848CPDW1 series. These transistors are designed for low power surface mount applications and are housed in the SOT-363/SC-88 package. They are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications requiring unique site and control change requirements. The devices are Pb-free, halogen-free/BFR-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (NPN) | V(BR)CEO | - | - | 45 | V |
| Collector-Emitter Breakdown Voltage (PNP) | V(BR)CEO | - | - | -45 | V |
| Collector-Base Breakdown Voltage (NPN) | V(BR)CBO | - | - | 50 | V |
| Collector-Base Breakdown Voltage (PNP) | V(BR)CBO | - | - | -50 | V |
| Emitter-Base Breakdown Voltage (NPN) | V(BR)EBO | 6.0 | - | - | V |
| Emitter-Base Breakdown Voltage (PNP) | V(BR)EBO | -6.0 | - | - | V |
| Collector Cutoff Current (NPN) | ICBO | - | - | 15 nA | nA |
| Collector Cutoff Current (PNP) | ICBO | - | - | -15 nA | nA |
| DC Current Gain (NPN) | hFE | 200 | - | 420 | - |
| DC Current Gain (PNP) | hFE | 200 | - | 420 | - |
| Collector-Emitter Saturation Voltage (NPN) | VCE(sat) | - | - | 0.25 V | V |
| Collector-Emitter Saturation Voltage (PNP) | VCE(sat) | - | - | -0.3 V | V |
| Base-Emitter Saturation Voltage (NPN) | VBE(sat) | 0.7 V | - | 0.9 V | V |
| Base-Emitter Saturation Voltage (PNP) | VBE(sat) | -0.7 V | - | -0.9 V | V |
| Thermal Resistance, Junction-to-Ambient | RJA | - | - | 328 °C/W | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55°C | - | +150°C | °C |
Key Features
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, Halogen-free/BFR-free, and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
- Low Power Surface Mount Package: Housed in the SOT-363/SC-88 package, ideal for low power applications.
- General Purpose Amplifier Applications: Designed for a wide range of general-purpose amplifier uses.
- High DC Current Gain: Offers high DC current gain (hFE) for efficient amplification.
- Low Collector-Emitter Saturation Voltage: Ensures low VCE(sat) for minimal power loss.
Applications
- Automotive Electronics: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- General Purpose Amplifiers: Used in a wide range of amplifier circuits for signal amplification.
- Consumer Electronics: Found in consumer electronic devices requiring low power and high reliability.
- Industrial Control Systems: Used in industrial control systems for reliable and efficient operation.
- Communication Devices: Utilized in communication devices for signal processing and amplification.
Q & A
- What is the package type of the SBC847BPDW1T3G transistor?
The SBC847BPDW1T3G transistor is housed in the SOT-363/SC-88 package.
- Is the SBC847BPDW1T3G transistor AEC-Q101 qualified?
Yes, the SBC847BPDW1T3G transistor is AEC-Q101 qualified and PPAP capable.
- What are the environmental compliance standards for the SBC847BPDW1T3G transistor?
The transistor is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the typical DC current gain (hFE) for the NPN transistor in the SBC847BPDW1T3G?
The typical DC current gain (hFE) for the NPN transistor is between 200 and 420.
- What is the maximum collector-emitter saturation voltage (VCE(sat)) for the NPN transistor?
The maximum collector-emitter saturation voltage (VCE(sat)) for the NPN transistor is 0.25 V.
- What is the thermal resistance, junction-to-ambient (RJA) for the SBC847BPDW1T3G transistor?
The thermal resistance, junction-to-ambient (RJA), is 328 °C/W.
- What is the junction and storage temperature range for the SBC847BPDW1T3G transistor?
The junction and storage temperature range is from -55°C to +150°C.
- What are some common applications for the SBC847BPDW1T3G transistor?
Common applications include automotive electronics, general-purpose amplifiers, consumer electronics, industrial control systems, and communication devices.
- What is the maximum collector current for the SBC847BPDW1T3G transistor?
The maximum continuous collector current (IC) is 100 mA, and the peak collector current (ICM) is 200 mA.
- What is the emitter-base breakdown voltage (V(BR)EBO) for the NPN transistor in the SBC847BPDW1T3G?
The emitter-base breakdown voltage (V(BR)EBO) for the NPN transistor is 6.0 V.
