Overview
The BC847BDW1T3 is a Dual NPN Bipolar Junction Transistor (BJT) designed for general purpose amplifier applications. It is manufactured by onsemi and housed in the SOT-363/SC-88 package, which is optimized for low power surface mount applications. This transistor is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, making it suitable for a wide range of electronic circuits. The device is marked with the code '1F' for easy identification.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | - | - | 45 | V |
| Continuous Collector Current | Ic | - | - | 100 | mA |
| DC Current Gain (hFE) | hFE | 200 | - | 800 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.6 | V @ Ib = 5mA, Ic = 100mA |
| Base-Emitter Saturation Voltage | VBE(sat) | - | - | 0.9 | V @ Ib = 0.5mA, Ic = 10mA |
| Transition Frequency | fT | - | - | 100 | MHz |
| Maximum Power Dissipation | Pd | - | - | 250 | mW |
| Operating Temperature Range | TJ | -55 | - | 150 | °C |
Key Features
- Dual NPN configuration, suitable for a variety of amplifier applications.
- Housed in the SOT-363/SC-88 package, ideal for low power surface mount applications.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- AECQ101 Qualified and PPAP Capable for automotive and other critical applications.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.6V at Ib = 5mA and Ic = 100mA.
- High DC current gain (hFE) with a minimum value of 200 and a maximum value of 800.
- Transition frequency of 100 MHz, suitable for high-frequency applications.
Applications
- General purpose amplifier applications.
- Low to medium voltage electronic circuits.
- Automotive and industrial control systems due to its AECQ101 qualification and PPAP capability.
- Surface mount designs where space is limited and low power consumption is required.
Q & A
- What is the package type of the BC847BDW1T3 transistor?
The BC847BDW1T3 is housed in the SOT-363/SC-88 package.
- What is the maximum collector current of the BC847BDW1T3?
The maximum collector current is 100 mA.
- What is the collector-emitter breakdown voltage of the BC847BDW1T3?
The collector-emitter breakdown voltage is 45 V.
- What is the transition frequency of the BC847BDW1T3?
The transition frequency is 100 MHz.
- Is the BC847BDW1T3 RoHS Compliant?
Yes, the BC847BDW1T3 is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- What is the operating temperature range of the BC847BDW1T3?
The operating temperature range is from -55°C to 150°C.
- What are the typical applications of the BC847BDW1T3?
General purpose amplifier applications, low to medium voltage electronic circuits, and automotive and industrial control systems.
- What is the maximum power dissipation of the BC847BDW1T3?
The maximum power dissipation is 250 mW.
- What is the DC current gain (hFE) range of the BC847BDW1T3?
The DC current gain (hFE) ranges from 200 to 800.
- Is the BC847BDW1T3 suitable for high-frequency applications?
Yes, with a transition frequency of 100 MHz, it is suitable for high-frequency applications.
