Overview
The BC847BDW1T1 is a Dual NPN Bipolar Transistor designed for general purpose amplifier applications. It is manufactured by onsemi and housed in the SOT-363/SC-88 package, which is optimized for low power surface mount applications. This transistor is part of the BC847 series, known for its reliability and versatility in various electronic circuits.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | V |
| Collector-Emitter Voltage | VCEO | 45 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Collector Current (DC) | IC | 100 | mA |
| Junction Temperature | TJ | 150 | °C |
| Storage Temperature Range | TSTG | -65 to +150 | °C |
| Power Dissipation | PD | 380 | mW |
| Thermal Resistance, Junction-to-Ambient | RθJA | 403 | °C/W |
| DC Current Gain | hFE | 110 to 800 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.2 to 0.6 V (IC = 10 mA, IB = 0.5 mA) | V |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.7 to 0.9 V (IC = 10 mA, IB = 0.5 mA) | V |
Key Features
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Housed in SOT-363/SC-88 package for low power surface mount applications
- Dual NPN configuration for versatile use in amplifier circuits
Applications
The BC847BDW1T1 is suitable for a wide range of general purpose amplifier applications, including:
- Audio amplifiers
- Switching circuits
- Automotive electronics (due to AEC-Q101 qualification)
- Low power surface mount designs
Q & A
- What is the package type of the BC847BDW1T1?
The BC847BDW1T1 is housed in the SOT-363/SC-88 package.
- What are the key applications of the BC847BDW1T1?
It is used in general purpose amplifier applications, audio amplifiers, switching circuits, and automotive electronics.
- Is the BC847BDW1T1 RoHS compliant?
Yes, the BC847BDW1T1 is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- What is the maximum collector current for the BC847BDW1T1?
The maximum collector current (DC) is 100 mA.
- What is the junction temperature range for the BC847BDW1T1?
The junction temperature range is -65 to +150 °C.
- What is the thermal resistance, junction-to-ambient for the BC847BDW1T1?
The thermal resistance, junction-to-ambient is 403 °C/W.
- Is the BC847BDW1T1 suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- What is the typical DC current gain (hFE) for the BC847BDW1T1?
The typical DC current gain (hFE) ranges from 110 to 800.
- What is the collector-emitter saturation voltage for the BC847BDW1T1?
The collector-emitter saturation voltage (VCE(sat)) is typically between 0.2 to 0.6 V (IC = 10 mA, IB = 0.5 mA).
- What is the base-emitter saturation voltage for the BC847BDW1T1?
The base-emitter saturation voltage (VBE(sat)) is typically between 0.7 to 0.9 V (IC = 10 mA, IB = 0.5 mA).
