Overview
The MBT3904DW1T1 is a Dual NPN Bipolar Transistor designed for general purpose amplifier applications. It is a spin-off of the popular SOT-23/SOT-323 three-leaded devices, housed in the SOT-363 six-leaded surface mount package. This configuration makes it ideal for low-power surface mount applications where board space is limited. The device simplifies circuit design, reduces board space, and minimizes component count, making it a versatile choice for various electronic designs.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit | Test Condition |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | - | Vdc | IC = 1.0 mA, IB = 0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 60 | - | Vdc | IC = 10 μA, IE = 0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6.0 | - | Vdc | IE = 10 μA, IC = 0 |
| Base Cutoff Current | IBL | - | 50 | nA | VCE = 30 V, VEB = 3.0 V |
| Collector Cutoff Current | ICEX | - | 50 | nA | VCE = 30 V, VEB = 3.0 V |
| DC Current Gain | hFE | 100 | 300 | - | IC = 0.1 mA, VCE = 1.0 V |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | 0.4 | V | - |
| Delay Time | td | - | 35 | ns | VCC = 3.0 V, VBE = -0.5 V, IB1 = 1.0 mA |
| Rise Time | tr | - | 35 | ns | IC = 10 mA, IB1 = 1.0 mA |
| Storage Time | ts | - | 200 | ns | VCC = 3.0 V, IC = 10 mA, IB1 = IB2 = 1.0 mA |
| Fall Time | tf | - | 50 | ns | IB1 = IB2 = 1.0 mA |
| Power Dissipation | Pd | - | 150 | mW | - |
| Voltage Rating (DC) | VCEO | - | 40 | V | - |
Key Features
- General Purpose Amplifier: Designed for general purpose amplifier applications.
- Dual NPN Transistors in One Package: Houses two discrete NPN transistors in a single SOT-363 package, reducing board space and component count.
- Low VCE(sat): Collector-Emitter Saturation Voltage of ≤ 0.4 V.
- High DC Current Gain: hFE ranges from 100 to 300.
- Automotive Compliance: Available with S and NSV prefixes for automotive and other applications requiring unique site and control change requirements; AEC-Q101 Qualified and PPAP Capable.
- Environmental Compliance: Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- Packaging Options: Available in 8 mm, 7-inch/3,000 Unit Tape and Reel.
Applications
The MBT3904DW1T1 is suitable for a variety of applications, including:
- General Purpose Amplifiers: Ideal for low-power amplifier circuits.
- Automotive Electronics: Meets automotive standards with AEC-Q101 qualification and PPAP capability.
- Consumer Electronics: Used in various consumer electronic devices where space is limited.
- Industrial Control Systems: Suitable for low-power control and switching applications.
Q & A
- What is the package type of the MBT3904DW1T1?
The MBT3904DW1T1 is housed in the SOT-363 six-leaded surface mount package.
- What is the DC current gain (hFE) range of the MBT3904DW1T1?
The DC current gain (hFE) ranges from 100 to 300.
- What is the maximum collector-emitter breakdown voltage (VCEO) of the MBT3904DW1T1?
The maximum collector-emitter breakdown voltage (VCEO) is 40 Vdc.
- Is the MBT3904DW1T1 RoHS compliant?
Yes, the MBT3904DW1T1 is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- What are the typical switching times for the MBT3904DW1T1?
The delay time (td) and rise time (tr) are typically 35 ns each, and the fall time (tf) is typically 50 ns.
- What is the maximum power dissipation of the MBT3904DW1T1?
The maximum power dissipation is 150 mW.
- Is the MBT3904DW1T1 suitable for automotive applications?
Yes, it is AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- What is the collector-emitter saturation voltage (VCE(sat)) of the MBT3904DW1T1?
The collector-emitter saturation voltage (VCE(sat)) is ≤ 0.4 V.
- How does the MBT3904DW1T1 simplify circuit design?
By housing two discrete devices in one package, it reduces board space and component count, simplifying circuit design.
- What are the packaging options for the MBT3904DW1T1?
It is available in 8 mm, 7-inch/3,000 Unit Tape and Reel.
