BC857SE6327
  • Share:

Infineon Technologies BC857SE6327

Manufacturer No:
BC857SE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857SE6327 is a PNP silicon AF (Audio Frequency) transistor array produced by Infineon Technologies. This component is designed for use in AF input stages and driver applications, offering high current gain and low collector-emitter saturation voltage. It is packaged in a SOT-363 format, making it suitable for a variety of electronic circuits where space efficiency and high performance are required.

Key Specifications

Parameter Value Unit
Collector-Emitter Breakdown Voltage (Vceo) 45 V
Collector Cut-Off Current (Icbo) 15 nA
Package SOT-363 -
Transistor Type PNP Silicon AF Transistor Array -

Key Features

The BC857SE6327 boasts several key features that make it an excellent choice for various applications:

  • High Current Gain: Ensures reliable and efficient operation in amplifier circuits.
  • Low Collector-Emitter Saturation Voltage: Reduces power consumption and heat generation.
  • Compact SOT-363 Package: Ideal for space-constrained designs and surface-mount technology (SMT) applications.
  • Audible Frequency (AF) Capability: Suitable for audio and other low-frequency signal processing.

Applications

The BC857SE6327 is versatile and can be used in a variety of applications, including:

  • Audio Amplifiers: For amplifying low-frequency signals in audio equipment.
  • Driver Circuits: To drive other components or circuits efficiently.
  • General Purpose Amplification: In circuits requiring high current gain and low saturation voltage.
  • Surface Mount Designs: Due to its compact SOT-363 package, it is ideal for SMT boards.

Q & A

  1. What is the collector-emitter breakdown voltage of the BC857SE6327?

    The collector-emitter breakdown voltage (Vceo) is 45V.

  2. What package type does the BC857SE6327 use?

    The BC857SE6327 is packaged in a SOT-363 format.

  3. What is the typical application of the BC857SE6327?

    It is typically used in AF input stages and driver applications.

  4. What is the collector cut-off current (Icbo) of the BC857SE6327?

    The collector cut-off current (Icbo) is 15nA.

  5. Is the BC857SE6327 suitable for surface mount technology (SMT)?

    Yes, it is suitable for SMT due to its SOT-363 package.

  6. What are the key features of the BC857SE6327?

    High current gain, low collector-emitter saturation voltage, and a compact SOT-363 package.

  7. Can the BC857SE6327 be used in audio amplifiers?

    Yes, it is suitable for audio amplifiers due to its AF capability.

  8. What type of transistor is the BC857SE6327?

    The BC857SE6327 is a PNP silicon AF transistor array.

  9. Where can I find detailed specifications for the BC857SE6327?

    Detailed specifications can be found in the datasheet available from sources like WIN SOURCE or distributor websites.

  10. Is the BC857SE6327 available from major electronics distributors?

    Yes, it is available from major electronics distributors such as Mouser and other online electronics retailers.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-VSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

-
459

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HE30/AA
DD26M20HE30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC857SE6327 BC857SH6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type 2 PNP (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 45V 45V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 250mW 250mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363 6-VSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 PG-SOT363-6

Related Product By Categories

MBT6429DW1T1G
MBT6429DW1T1G
onsemi
TRANS 2NPN 45V 0.2A SC88/SC70-6
ULN2065B
ULN2065B
STMicroelectronics
TRANS 4NPN DARL 80V 1.75A 16DIP
NSVT65010MW6T1G
NSVT65010MW6T1G
onsemi
TRANS 2PNP 65V 0.1A SC88-6
BC846SH6327XTSA1
BC846SH6327XTSA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
ULQ2003A
ULQ2003A
STMicroelectronics
TRANS 7NPN DARL 50V 0.5A 16DIP
SN75469N
SN75469N
Texas Instruments
TRANS 7NPN DARL 100V 0.5A 16DIP
BC847PNH6727XTSA1
BC847PNH6727XTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC856UE6327HTSA1
BC856UE6327HTSA1
Infineon Technologies
TRANS 2PNP 65V 0.1A SC74-6
MC1413BDR2
MC1413BDR2
onsemi
TRANS 7NPN DARL 50V 0.5A 16SO
MAT01AH
MAT01AH
Analog Devices Inc.
TRANS 2NPN 45V 0.025A TO78-6
BC857CDW1T1
BC857CDW1T1
onsemi
TRANS 2PNP 45V 0.1A SOT363
BC856BS/ZLX
BC856BS/ZLX
Nexperia USA Inc.
TRANSISTOR

Related Product By Brand

BAV99UE6327
BAV99UE6327
Infineon Technologies
RECTIFIER DIODE
BAS40B5003
BAS40B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC859CE6327HTSA1
BC859CE6327HTSA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
MMBTA42LT1
MMBTA42LT1
Infineon Technologies
TRANS NPN 300V 0.5A SOT23-3
BC 847CW B6327
BC 847CW B6327
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
IPG20N04S4L08AATMA1
IPG20N04S4L08AATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
IRLML2402TRPBF
IRLML2402TRPBF
Infineon Technologies
MOSFET N-CH 20V 1.2A SOT23
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
BSS123L7874XT
BSS123L7874XT
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
FF600R12ME4CPBPSA1
FF600R12ME4CPBPSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
IKW40N120H3FKSA1
IKW40N120H3FKSA1
Infineon Technologies
IGBT 1200V 80A 483W TO247-3