BC857SE6327
  • Share:

Infineon Technologies BC857SE6327

Manufacturer No:
BC857SE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857SE6327 is a PNP silicon AF (Audio Frequency) transistor array produced by Infineon Technologies. This component is designed for use in AF input stages and driver applications, offering high current gain and low collector-emitter saturation voltage. It is packaged in a SOT-363 format, making it suitable for a variety of electronic circuits where space efficiency and high performance are required.

Key Specifications

Parameter Value Unit
Collector-Emitter Breakdown Voltage (Vceo) 45 V
Collector Cut-Off Current (Icbo) 15 nA
Package SOT-363 -
Transistor Type PNP Silicon AF Transistor Array -

Key Features

The BC857SE6327 boasts several key features that make it an excellent choice for various applications:

  • High Current Gain: Ensures reliable and efficient operation in amplifier circuits.
  • Low Collector-Emitter Saturation Voltage: Reduces power consumption and heat generation.
  • Compact SOT-363 Package: Ideal for space-constrained designs and surface-mount technology (SMT) applications.
  • Audible Frequency (AF) Capability: Suitable for audio and other low-frequency signal processing.

Applications

The BC857SE6327 is versatile and can be used in a variety of applications, including:

  • Audio Amplifiers: For amplifying low-frequency signals in audio equipment.
  • Driver Circuits: To drive other components or circuits efficiently.
  • General Purpose Amplification: In circuits requiring high current gain and low saturation voltage.
  • Surface Mount Designs: Due to its compact SOT-363 package, it is ideal for SMT boards.

Q & A

  1. What is the collector-emitter breakdown voltage of the BC857SE6327?

    The collector-emitter breakdown voltage (Vceo) is 45V.

  2. What package type does the BC857SE6327 use?

    The BC857SE6327 is packaged in a SOT-363 format.

  3. What is the typical application of the BC857SE6327?

    It is typically used in AF input stages and driver applications.

  4. What is the collector cut-off current (Icbo) of the BC857SE6327?

    The collector cut-off current (Icbo) is 15nA.

  5. Is the BC857SE6327 suitable for surface mount technology (SMT)?

    Yes, it is suitable for SMT due to its SOT-363 package.

  6. What are the key features of the BC857SE6327?

    High current gain, low collector-emitter saturation voltage, and a compact SOT-363 package.

  7. Can the BC857SE6327 be used in audio amplifiers?

    Yes, it is suitable for audio amplifiers due to its AF capability.

  8. What type of transistor is the BC857SE6327?

    The BC857SE6327 is a PNP silicon AF transistor array.

  9. Where can I find detailed specifications for the BC857SE6327?

    Detailed specifications can be found in the datasheet available from sources like WIN SOURCE or distributor websites.

  10. Is the BC857SE6327 available from major electronics distributors?

    Yes, it is available from major electronics distributors such as Mouser and other online electronics retailers.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-VSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

-
459

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S1S50V50
RD50S1S50V50
CONN D-SUB RCPT 50POS CRIMP

Similar Products

Part Number BC857SE6327 BC857SH6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type 2 PNP (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 45V 45V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 250mW 250mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363 6-VSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 PG-SOT363-6

Related Product By Categories

PBSS4160DSH
PBSS4160DSH
Nexperia USA Inc.
TRANS 2NPN 60V 0.87A SC-74
BC857BS_R1_00001
BC857BS_R1_00001
Panjit International Inc.
SOT-363, TRANSISTOR
BC847BPDW1T1G
BC847BPDW1T1G
onsemi
TRAN NPN/PNP 45V 0.1A SC88/SC70
BC857QASZ
BC857QASZ
Nexperia USA Inc.
TRANS 2PNP 45V 0.1A DFN1010B-6
CPH5524-TL-E
CPH5524-TL-E
onsemi
TRANS NPN/PNP 50V 3A 5CPH
NST3906DXV6T1G
NST3906DXV6T1G
onsemi
TRANS 2PNP 40V 0.2A SOT563
BC847CDXV6T5
BC847CDXV6T5
onsemi
TRANS 2NPN 45V 0.1A SOT563
BC847SE6327BTSA1
BC847SE6327BTSA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
PMP5201Y/DG/B3X
PMP5201Y/DG/B3X
Nexperia USA Inc.
TRANS 2NPN MATCHED
BC847BPN/DG/B2,115
BC847BPN/DG/B2,115
Nexperia USA Inc.
TRANS GEN PURPOSE SC-88
BC847BPN/ZLF
BC847BPN/ZLF
Nexperia USA Inc.
GENERAL-PURPOSE TRANSISTOR
BC846SH-QX
BC846SH-QX
Nexperia USA Inc.
BC846SH-QX

Related Product By Brand

BAV70UE6327
BAV70UE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAV70SH6727XTSA1
BAV70SH6727XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAT 54 B5003
BAT 54 B5003
Infineon Technologies
DIODE SCHOTTKY 30V 200MA SOT23-3
BC847PNE6327BTSA1
BC847PNE6327BTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BFS17PE6327HTSA1
BFS17PE6327HTSA1
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT23-3
BC817SUE6327HTSA1
BC817SUE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SC74-6
BC 847CW B6327
BC 847CW B6327
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
BCV61BE6327
BCV61BE6327
Infineon Technologies
TRANSISTORS FOR CURRENT MIRROR
CY7C68013A-100AXC
CY7C68013A-100AXC
Infineon Technologies
IC MCU USB PERIPH HI SPD 100LQFP
CY7C68013A-56PVXC
CY7C68013A-56PVXC
Infineon Technologies
IC MCU USB PERIPH HI SPD 56SSOP