BC857SE6327
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Infineon Technologies BC857SE6327

Manufacturer No:
BC857SE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857SE6327 is a PNP silicon AF (Audio Frequency) transistor array produced by Infineon Technologies. This component is designed for use in AF input stages and driver applications, offering high current gain and low collector-emitter saturation voltage. It is packaged in a SOT-363 format, making it suitable for a variety of electronic circuits where space efficiency and high performance are required.

Key Specifications

Parameter Value Unit
Collector-Emitter Breakdown Voltage (Vceo) 45 V
Collector Cut-Off Current (Icbo) 15 nA
Package SOT-363 -
Transistor Type PNP Silicon AF Transistor Array -

Key Features

The BC857SE6327 boasts several key features that make it an excellent choice for various applications:

  • High Current Gain: Ensures reliable and efficient operation in amplifier circuits.
  • Low Collector-Emitter Saturation Voltage: Reduces power consumption and heat generation.
  • Compact SOT-363 Package: Ideal for space-constrained designs and surface-mount technology (SMT) applications.
  • Audible Frequency (AF) Capability: Suitable for audio and other low-frequency signal processing.

Applications

The BC857SE6327 is versatile and can be used in a variety of applications, including:

  • Audio Amplifiers: For amplifying low-frequency signals in audio equipment.
  • Driver Circuits: To drive other components or circuits efficiently.
  • General Purpose Amplification: In circuits requiring high current gain and low saturation voltage.
  • Surface Mount Designs: Due to its compact SOT-363 package, it is ideal for SMT boards.

Q & A

  1. What is the collector-emitter breakdown voltage of the BC857SE6327?

    The collector-emitter breakdown voltage (Vceo) is 45V.

  2. What package type does the BC857SE6327 use?

    The BC857SE6327 is packaged in a SOT-363 format.

  3. What is the typical application of the BC857SE6327?

    It is typically used in AF input stages and driver applications.

  4. What is the collector cut-off current (Icbo) of the BC857SE6327?

    The collector cut-off current (Icbo) is 15nA.

  5. Is the BC857SE6327 suitable for surface mount technology (SMT)?

    Yes, it is suitable for SMT due to its SOT-363 package.

  6. What are the key features of the BC857SE6327?

    High current gain, low collector-emitter saturation voltage, and a compact SOT-363 package.

  7. Can the BC857SE6327 be used in audio amplifiers?

    Yes, it is suitable for audio amplifiers due to its AF capability.

  8. What type of transistor is the BC857SE6327?

    The BC857SE6327 is a PNP silicon AF transistor array.

  9. Where can I find detailed specifications for the BC857SE6327?

    Detailed specifications can be found in the datasheet available from sources like WIN SOURCE or distributor websites.

  10. Is the BC857SE6327 available from major electronics distributors?

    Yes, it is available from major electronics distributors such as Mouser and other online electronics retailers.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-VSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
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Similar Products

Part Number BC857SE6327 BC857SH6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type 2 PNP (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 45V 45V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 250mW 250mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363 6-VSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 PG-SOT363-6

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