IPG20N04S4L08AATMA1
  • Share:

Infineon Technologies IPG20N04S4L08AATMA1

Manufacturer No:
IPG20N04S4L08AATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 40V 20A 8TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IPG20N04S4L08AATMA1 is a high-performance electronic component manufactured by Infineon Technologies. It belongs to the category of power MOSFETs, specifically designed for efficient power management and switching applications. This model is targeted at industries requiring robust and reliable power solutions, such as automotive, industrial automation, and consumer electronics. Its unique selling points include low on-resistance, high switching speed, and excellent thermal performance, making it a competitive choice for modern power applications.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)40VMaximum rating
Continuous Drain Current (ID)20AAt 25°C
On-Resistance (RDS(on))8At VGS = 10V
Gate-Source Voltage (VGS)±20VMaximum rating
Power Dissipation (PD)45WAt 25°C
Operating Temperature Range-55 to 150°CRecommended

Key Features

  • Low On-Resistance: Ensures minimal power loss and high efficiency in switching applications.
  • High Switching Speed: Enables fast response times in power management systems.
  • Thermal Performance: Designed to handle high power dissipation with excellent thermal management.
  • Robust Design: Suitable for demanding environments, including automotive and industrial applications.

Applications

The IPG20N04S4L08AATMA1 is widely used in various fields, including:

  • Automotive Electronics: Power management in electric vehicles and hybrid systems.
  • Industrial Automation: Motor control and power switching in industrial machinery.
  • Consumer Electronics: Efficient power solutions in devices like laptops and power supplies.
  • Renewable Energy: Solar inverters and battery management systems.

Q & A

1. What is the maximum drain-source voltage of the IPG20N04S4L08AATMA1?

The maximum drain-source voltage is 40V.

2. What is the continuous drain current rating?

The continuous drain current is rated at 20A at 25°C.

3. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 8mΩ at a gate-source voltage of 10V.

4. What is the operating temperature range?

The operating temperature ranges from -55°C to 150°C.

5. Is this MOSFET suitable for automotive applications?

Yes, it is designed for robust performance in automotive environments.

6. What is the power dissipation rating?

The power dissipation is rated at 45W at 25°C.

7. What is the gate-source voltage range?

The gate-source voltage range is ±20V.

8. Can this MOSFET be used in high-frequency switching applications?

Yes, its high switching speed makes it suitable for such applications.

9. What are the key advantages of this MOSFET?

Key advantages include low on-resistance, high switching speed, and excellent thermal performance.

10. Is the IPG20N04S4L08AATMA1 compatible with industrial automation systems?

Yes, it is widely used in industrial automation for motor control and power switching.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:8.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.2V @ 22µA
Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:3050pF @ 25V
Power - Max:54W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-10
0 Remaining View Similar

In Stock

$0.99
387

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPG20N04S4L08AATMA1 IPG20N04S4L08ATMA1 IPG20N04S408AATMA1 IPG20N04S4L07AATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Standard Logic Level Gate
Drain to Source Voltage (Vdss) 40V 40V 40V 40V
Current - Continuous Drain (Id) @ 25°C 20A 20A 20A 20A
Rds On (Max) @ Id, Vgs 8.2mOhm @ 17A, 10V 8.2mOhm @ 17A, 10V 7.6mOhm @ 17A, 10V 7.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 22µA 2.2V @ 22µA 4V @ 30µA 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V 39nC @ 10V 36nC @ 10V 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3050pF @ 25V 3050pF @ 25V 2940pF @ 25V 3980pF @ 25V
Power - Max 54W 54W 65W 65W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10 PG-TDSON-8-4 PG-TDSON-8-10 PG-TDSON-8-10

Related Product By Categories

BSS138DWQ-7
BSS138DWQ-7
Diodes Incorporated
MOSFET 2NCH 50V 200MA SOT363
CSD88539NDT
CSD88539NDT
Texas Instruments
MOSFET 2N-CH 60V 15A 8SOIC
CSD87350Q5D
CSD87350Q5D
Texas Instruments
MOSFET 2N-CH 30V 40A 8LSON
2N7002V
2N7002V
onsemi
MOSFET 2N-CH 60V 280MA SOT563F
BUK7K15-80EX
BUK7K15-80EX
Nexperia USA Inc.
MOSFET 2 N-CH 80V 23A LFPAK56D
PMGD175XNEX
PMGD175XNEX
Nexperia USA Inc.
MOSFET 2N-CH 30V 870MA 6TSSOP
FDG6308P
FDG6308P
onsemi
MOSFET 2P-CH 20V 600MA SC88
BSS84DW-7-F
BSS84DW-7-F
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SC70-6
BSS138DWK-13
BSS138DWK-13
Diodes Incorporated
MOSFET BVDSS: 41V~60V SOT363 T&R
NX138BKSF
NX138BKSF
Nexperia USA Inc.
MOSFET 2 N-CH 60V 330MA SOT363
ECH8668-TL-H
ECH8668-TL-H
onsemi
MOSFET N/P-CH 20V 7.5A/5A ECH8
BSS138DW-7-F-79
BSS138DW-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

BC857SH6827XTSA1
BC857SH6827XTSA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
BC807-25WE6327
BC807-25WE6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC857BE6327
BC857BE6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC847BWH6433XTMA1
BC847BWH6433XTMA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BC 857BT E6327
BC 857BT E6327
Infineon Technologies
TRANS PNP 45V 0.1A SC75
BSC016N06NSTATMA1
BSC016N06NSTATMA1
Infineon Technologies
MOSFET N-CH 60V 31A/100A TDSON
IRFP064NPBF
IRFP064NPBF
Infineon Technologies
MOSFET N-CH 55V 110A TO247AC
SPP20N60C3XKSA1
SPP20N60C3XKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
BSC010N04LSCATMA1
BSC010N04LSCATMA1
Infineon Technologies
DIFFERENTIATED MOSFETS
TLE9879QXA40XUMA1
TLE9879QXA40XUMA1
Infineon Technologies
IC MOTOR DRIVER 48VQFN
SAK-TC1796-256F150E BE
SAK-TC1796-256F150E BE
Infineon Technologies
IC MCU 32BIT 2MB FLASH 416BGA
BSP742RINT
BSP742RINT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-8