IPG20N04S4L08AATMA1
  • Share:

Infineon Technologies IPG20N04S4L08AATMA1

Manufacturer No:
IPG20N04S4L08AATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 40V 20A 8TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IPG20N04S4L08AATMA1 is a high-performance electronic component manufactured by Infineon Technologies. It belongs to the category of power MOSFETs, specifically designed for efficient power management and switching applications. This model is targeted at industries requiring robust and reliable power solutions, such as automotive, industrial automation, and consumer electronics. Its unique selling points include low on-resistance, high switching speed, and excellent thermal performance, making it a competitive choice for modern power applications.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)40VMaximum rating
Continuous Drain Current (ID)20AAt 25°C
On-Resistance (RDS(on))8At VGS = 10V
Gate-Source Voltage (VGS)±20VMaximum rating
Power Dissipation (PD)45WAt 25°C
Operating Temperature Range-55 to 150°CRecommended

Key Features

  • Low On-Resistance: Ensures minimal power loss and high efficiency in switching applications.
  • High Switching Speed: Enables fast response times in power management systems.
  • Thermal Performance: Designed to handle high power dissipation with excellent thermal management.
  • Robust Design: Suitable for demanding environments, including automotive and industrial applications.

Applications

The IPG20N04S4L08AATMA1 is widely used in various fields, including:

  • Automotive Electronics: Power management in electric vehicles and hybrid systems.
  • Industrial Automation: Motor control and power switching in industrial machinery.
  • Consumer Electronics: Efficient power solutions in devices like laptops and power supplies.
  • Renewable Energy: Solar inverters and battery management systems.

Q & A

1. What is the maximum drain-source voltage of the IPG20N04S4L08AATMA1?

The maximum drain-source voltage is 40V.

2. What is the continuous drain current rating?

The continuous drain current is rated at 20A at 25°C.

3. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 8mΩ at a gate-source voltage of 10V.

4. What is the operating temperature range?

The operating temperature ranges from -55°C to 150°C.

5. Is this MOSFET suitable for automotive applications?

Yes, it is designed for robust performance in automotive environments.

6. What is the power dissipation rating?

The power dissipation is rated at 45W at 25°C.

7. What is the gate-source voltage range?

The gate-source voltage range is ±20V.

8. Can this MOSFET be used in high-frequency switching applications?

Yes, its high switching speed makes it suitable for such applications.

9. What are the key advantages of this MOSFET?

Key advantages include low on-resistance, high switching speed, and excellent thermal performance.

10. Is the IPG20N04S4L08AATMA1 compatible with industrial automation systems?

Yes, it is widely used in industrial automation for motor control and power switching.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:8.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.2V @ 22µA
Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:3050pF @ 25V
Power - Max:54W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-10
0 Remaining View Similar

In Stock

$0.99
387

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPG20N04S4L08AATMA1 IPG20N04S4L08ATMA1 IPG20N04S408AATMA1 IPG20N04S4L07AATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Standard Logic Level Gate
Drain to Source Voltage (Vdss) 40V 40V 40V 40V
Current - Continuous Drain (Id) @ 25°C 20A 20A 20A 20A
Rds On (Max) @ Id, Vgs 8.2mOhm @ 17A, 10V 8.2mOhm @ 17A, 10V 7.6mOhm @ 17A, 10V 7.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 22µA 2.2V @ 22µA 4V @ 30µA 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V 39nC @ 10V 36nC @ 10V 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3050pF @ 25V 3050pF @ 25V 2940pF @ 25V 3980pF @ 25V
Power - Max 54W 54W 65W 65W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10 PG-TDSON-8-4 PG-TDSON-8-10 PG-TDSON-8-10

Related Product By Categories

FDS89161LZ
FDS89161LZ
onsemi
MOSFET 2N-CH 100V 2.7A 8SOIC
BSS84AKV,115
BSS84AKV,115
Nexperia USA Inc.
MOSFET 2P-CH 50V 170MA SOT666
NX3008PBKS,115
NX3008PBKS,115
Nexperia USA Inc.
MOSFET 2P-CH 30V 0.2A 6TSSOP
FDS8858CZ
FDS8858CZ
onsemi
MOSFET N/P-CH 30V 8.6/7.3A 8SOIC
2N7002VA
2N7002VA
onsemi
MOSFET 2N-CH 60V 280MA SOT563F
BSS84DW-7-F
BSS84DW-7-F
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SC70-6
NTLJD4116NT1G
NTLJD4116NT1G
onsemi
MOSFET 2N-CH 30V 2.5A 6WDFN
NVMFD5C478NLT1G
NVMFD5C478NLT1G
onsemi
40V 14.5 MOHM T8 S08FL DU
NTMFD5C674NLT1G
NTMFD5C674NLT1G
onsemi
T6 60V LL S08FL DS
NTJD4001NT1
NTJD4001NT1
onsemi
MOSFET 2N-CH 30V 0.25A SOT363
FDG6301N_D87Z
FDG6301N_D87Z
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6
BSS8402DW-7-G
BSS8402DW-7-G
Diodes Incorporated
MOSFET N/P-CH 60V/50V SC70-6

Related Product By Brand

BAT5404E6327HTSA1
BAT5404E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BAS70-05B5003
BAS70-05B5003
Infineon Technologies
SCHOTTKY DIODE
BAV 70 B5003
BAV 70 B5003
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BC858BW
BC858BW
Infineon Technologies
TRANS PNP 30V 0.1A SOT323
BF998E6327
BF998E6327
Infineon Technologies
BF998 - RF SMALL SIGNAL TRANSIST
IRF4905SPBF
IRF4905SPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
IKW75N60TA
IKW75N60TA
Infineon Technologies
IKW75N60 - AUTOMOTIVE IGBT DISCR
TLE6250G ITJKK
TLE6250G ITJKK
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8
TLD5098ELXUMA1
TLD5098ELXUMA1
Infineon Technologies
IC LED DRIVER CTRLR PWM 14SSOP
BTS3408GXUMA2
BTS3408GXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 8SOIC
BTS428L2XT
BTS428L2XT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
S29GL128P90TFIR10
S29GL128P90TFIR10
Infineon Technologies
IC FLASH 128MBIT PARALLEL 56TSOP