IPG20N04S4L08AATMA1
  • Share:

Infineon Technologies IPG20N04S4L08AATMA1

Manufacturer No:
IPG20N04S4L08AATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 40V 20A 8TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IPG20N04S4L08AATMA1 is a high-performance electronic component manufactured by Infineon Technologies. It belongs to the category of power MOSFETs, specifically designed for efficient power management and switching applications. This model is targeted at industries requiring robust and reliable power solutions, such as automotive, industrial automation, and consumer electronics. Its unique selling points include low on-resistance, high switching speed, and excellent thermal performance, making it a competitive choice for modern power applications.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)40VMaximum rating
Continuous Drain Current (ID)20AAt 25°C
On-Resistance (RDS(on))8At VGS = 10V
Gate-Source Voltage (VGS)±20VMaximum rating
Power Dissipation (PD)45WAt 25°C
Operating Temperature Range-55 to 150°CRecommended

Key Features

  • Low On-Resistance: Ensures minimal power loss and high efficiency in switching applications.
  • High Switching Speed: Enables fast response times in power management systems.
  • Thermal Performance: Designed to handle high power dissipation with excellent thermal management.
  • Robust Design: Suitable for demanding environments, including automotive and industrial applications.

Applications

The IPG20N04S4L08AATMA1 is widely used in various fields, including:

  • Automotive Electronics: Power management in electric vehicles and hybrid systems.
  • Industrial Automation: Motor control and power switching in industrial machinery.
  • Consumer Electronics: Efficient power solutions in devices like laptops and power supplies.
  • Renewable Energy: Solar inverters and battery management systems.

Q & A

1. What is the maximum drain-source voltage of the IPG20N04S4L08AATMA1?

The maximum drain-source voltage is 40V.

2. What is the continuous drain current rating?

The continuous drain current is rated at 20A at 25°C.

3. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 8mΩ at a gate-source voltage of 10V.

4. What is the operating temperature range?

The operating temperature ranges from -55°C to 150°C.

5. Is this MOSFET suitable for automotive applications?

Yes, it is designed for robust performance in automotive environments.

6. What is the power dissipation rating?

The power dissipation is rated at 45W at 25°C.

7. What is the gate-source voltage range?

The gate-source voltage range is ±20V.

8. Can this MOSFET be used in high-frequency switching applications?

Yes, its high switching speed makes it suitable for such applications.

9. What are the key advantages of this MOSFET?

Key advantages include low on-resistance, high switching speed, and excellent thermal performance.

10. Is the IPG20N04S4L08AATMA1 compatible with industrial automation systems?

Yes, it is widely used in industrial automation for motor control and power switching.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:8.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.2V @ 22µA
Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:3050pF @ 25V
Power - Max:54W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-10
0 Remaining View Similar

In Stock

$0.99
387

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPG20N04S4L08AATMA1 IPG20N04S4L08ATMA1 IPG20N04S408AATMA1 IPG20N04S4L07AATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Standard Logic Level Gate
Drain to Source Voltage (Vdss) 40V 40V 40V 40V
Current - Continuous Drain (Id) @ 25°C 20A 20A 20A 20A
Rds On (Max) @ Id, Vgs 8.2mOhm @ 17A, 10V 8.2mOhm @ 17A, 10V 7.6mOhm @ 17A, 10V 7.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 22µA 2.2V @ 22µA 4V @ 30µA 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V 39nC @ 10V 36nC @ 10V 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3050pF @ 25V 3050pF @ 25V 2940pF @ 25V 3980pF @ 25V
Power - Max 54W 54W 65W 65W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10 PG-TDSON-8-4 PG-TDSON-8-10 PG-TDSON-8-10

Related Product By Categories

NTMD5838NLR2G
NTMD5838NLR2G
onsemi
MOSFET 2N-CH 40V 7.4A 8SOIC
NTZD3152PT1G
NTZD3152PT1G
onsemi
MOSFET 2P-CH 20V 430MA SOT563
PMDXB550UNEZ
PMDXB550UNEZ
Nexperia USA Inc.
MOSFET 2N-CH 30V 0.59A 6DFN
FDC6327C
FDC6327C
onsemi
MOSFET N/P-CH 20V SSOT-6
BUK9K25-40EX
BUK9K25-40EX
Nexperia USA Inc.
MOSFET 2N-CH 40V 18.2A 56LFPAK
NX3008NBKV,115
NX3008NBKV,115
Nexperia USA Inc.
MOSFET 2N-CH 30V 400MA SOT666
FDG6335N
FDG6335N
onsemi
MOSFET 2N-CH 20V 0.7A SOT-363
BUK7K52-60EX
BUK7K52-60EX
Nexperia USA Inc.
MOSFET 2N-CH 60V 15.4A LFPAK
NVMFD5C680NLT1G
NVMFD5C680NLT1G
onsemi
MOSFET 2N-CH 60V 26A S08FL
NTGD4167CT1G
NTGD4167CT1G
onsemi
MOSFET N/P-CH 30V 2.6/1.9A 6TSOP
NTMFD5C674NLT1G
NTMFD5C674NLT1G
onsemi
T6 60V LL S08FL DS
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC

Related Product By Brand

BAT54B5003
BAT54B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS40B5000
BAS40B5000
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC817UPNB6327XT
BC817UPNB6327XT
Infineon Technologies
TRANS NPN/PNP 45V 0.5A SC74-6
BCV26E327
BCV26E327
Infineon Technologies
TRANS PNP DARL 30V 0.5A SOT23
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
BC 807-25 B5003
BC 807-25 B5003
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
BC847BWE6433HTMA1
BC847BWE6433HTMA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
IRFR120NTRPBF
IRFR120NTRPBF
Infineon Technologies
MOSFET N-CH 100V 9.4A DPAK
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
SPP20N60C3HKSA1
SPP20N60C3HKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
TLE4267GMXUMA1
TLE4267GMXUMA1
Infineon Technologies
IC REG LINEAR 5V 400MA DSO14-30
CY7C1061DV33-10BVXIT
CY7C1061DV33-10BVXIT
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA