BAS21E6327HTSA1
  • Share:

Infineon Technologies BAS21E6327HTSA1

Manufacturer No:
BAS21E6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE GP 200V 250MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS21E6327HTSA1 is a high-speed switching diode produced by Infineon Technologies. This component is designed for general-purpose switching applications and is known for its fast switching speed and high conductance. The diode is packaged in a surface-mount SOT-23-3 configuration, making it ideal for automated insertion in various electronic circuits. It is also fully RoHS compliant and lead-free, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

Parameter Symbol Value Unit
Maximum Reverse Voltage VR 200 V
Peak Reverse Voltage VRM 250 V
Forward Continuous Current IFM 250 mA
Non-Repetitive Peak Forward Surge Current IFSM 625 mA
Forward Voltage VF 1.25 V @ 200 mA
Reverse Recovery Time trr 50 ns
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65 to 150 °C
Package SOT-23-3
Moisture Sensitivity Level 1 (Unlimited)

Key Features

  • Fast Switching Speed: The BAS21E6327HTSA1 is designed for high-speed switching applications, making it suitable for circuits that require quick switching times.
  • Surface Mount Package: The SOT-23-3 package is ideal for automated insertion and surface mount technology, enhancing manufacturing efficiency.
  • High Conductance: The diode offers high conductance, ensuring efficient current flow in the circuit.
  • RoHS Compliant and Lead-Free: The component is fully RoHS compliant and lead-free, aligning with environmental and regulatory standards.
  • AEC-Q101 Qualified: Suitable for automotive applications requiring specific change control, this diode is AEC-Q101 qualified and manufactured in IATF 16949 certified facilities.

Applications

  • General-Purpose Switching: The BAS21E6327HTSA1 is used in various general-purpose switching applications due to its fast switching speed and high conductance.
  • Automotive Electronics: Qualified to AEC-Q101 standards, this diode is suitable for use in automotive electronic systems that require reliable and high-performance components.
  • Consumer Electronics: It can be used in consumer electronics for applications such as power supplies, signal processing, and other high-speed switching circuits.

Q & A

  1. What is the maximum reverse voltage of the BAS21E6327HTSA1?

    The maximum reverse voltage is 200 V.

  2. What is the forward continuous current rating of this diode?

    The forward continuous current rating is 250 mA.

  3. What is the reverse recovery time of the BAS21E6327HTSA1?

    The reverse recovery time is 50 ns).

  4. Is the BAS21E6327HTSA1 RoHS compliant?
  5. What is the junction temperature rating of this diode?

    The junction temperature rating is up to 150°C).

  6. What package type is used for the BAS21E6327HTSA1?

    The diode is packaged in a SOT-23-3 surface mount configuration).

  7. Is the BAS21E6327HTSA1 suitable for automotive applications?
  8. What is the moisture sensitivity level of the BAS21E6327HTSA1?

    The moisture sensitivity level is 1 (Unlimited)).

  9. What is the forward voltage drop at 200 mA for this diode?

    The forward voltage drop at 200 mA is 1.25 V).

  10. Can the BAS21E6327HTSA1 be used in high-speed switching circuits?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.37
782

Please send RFQ , we will respond immediately.

Same Series
BAS21UE6327HTSA1
BAS21UE6327HTSA1
DIODE ARRAY GP 200V 250MA SC74-6
BAS21UE6433HTMA1
BAS21UE6433HTMA1
DIODE ARRAY GP 200V 250MA SC74-6
BAS2103WE6327HTSA1
BAS2103WE6327HTSA1
DIODE GEN PURP 200V 250MA SOD323
BAS21E6327HTSA1
BAS21E6327HTSA1
DIODE GP 200V 250MA SOT23-3
BAS21E6433HTMA1
BAS21E6433HTMA1
DIODE GEN PURP 200V 250MA SOT23
BAS2103WE6433HTMA1
BAS2103WE6433HTMA1
DIODE GEN PURP 200V 250MA SOD323
BAS21E6359HTMA1
BAS21E6359HTMA1
DIODE GP 200V 250MA SOT23-3

Related Product By Categories

BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
STTH5L06RL
STTH5L06RL
STMicroelectronics
DIODE GEN PURP 600V 5A DO201AD
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

BAS4004E6327HTSA1
BAS4004E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS7004SH6327XTSA1
BAS7004SH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT363
BAS1602WH6327XTSA1
BAS1602WH6327XTSA1
Infineon Technologies
DIODE GEN PURP 80V 200MA SCD80-2
BC847PNE6327BTSA1
BC847PNE6327BTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC846AE6433
BC846AE6433
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC858BW
BC858BW
Infineon Technologies
TRANS PNP 30V 0.1A SOT323
BCX5316H6433XTMA1
BCX5316H6433XTMA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
IRFR5305TRPBF
IRFR5305TRPBF
Infineon Technologies
MOSFET P-CH 55V 31A DPAK
BSS138W E6433
BSS138W E6433
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
BTS70302EPAXUMA1
BTS70302EPAXUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 TSDSO-14
CY7C1061DV33-10BVXIT
CY7C1061DV33-10BVXIT
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA