PMGD175XNEAX
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Nexperia USA Inc. PMGD175XNEAX

Manufacturer No:
PMGD175XNEAX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2 N-CH 30V 900MA SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMGD175XNEAX is a dual N-channel Trench MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's TrenchMOS™ series, known for its high performance and reliability. The PMGD175XNEAX is designed for a variety of applications requiring efficient power switching, such as industrial, automotive, and consumer electronics.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)30V
ID (Continuous Drain Current) @ 25°C870mA
RDS(on) (Drain-Source On-State Resistance) @ VGS = 4.5 V, ID = 200 mA340mΩ
VGS(th) (Gate-Source Threshold Voltage)1V @ ID = 250 μA
Ciss (Input Capacitance)45pF @ VDS = 20 V
Coss (Output Capacitance)13pF @ VDS = 15 V, f = 1 MHz, VGS = 0 V
Crss (Reverse Transfer Capacitance)9pF @ VDS = 15 V, f = 1 MHz, VGS = 0 V
Tj (Junction Temperature)-55 to 150°C
Package6-TSSOP, SC-88, SOT-363

Key Features

  • Logic Level Gate: The PMGD175XNEAX features a logic level gate, making it compatible with low voltage control signals.
  • High Efficiency: With a low RDS(on) of 340 mΩ, this MOSFET minimizes power losses and enhances overall system efficiency.
  • Compact Packaging: Available in 6-TSSOP, SC-88, and SOT-363 packages, this component is ideal for space-constrained designs.
  • Wide Operating Temperature Range: The device operates reliably over a junction temperature range of -55°C to 150°C.
  • RoHS Compliance: The PMGD175XNEAX is RoHS compliant, ensuring environmental sustainability.

Applications

The PMGD175XNEAX is suitable for a variety of applications, including:

  • Industrial Electronics: Motor drives, power supplies, and other industrial control systems.
  • Automotive Electronics: Battery management, power steering, and other automotive systems requiring efficient power switching.
  • Consumer Electronics: Power management in portable devices, home appliances, and other consumer electronics.
  • Renewable Energy Systems: Solar and wind power systems that require reliable and efficient power switching.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMGD175XNEAX?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the continuous drain current (ID) at 25°C?
    The continuous drain current (ID) at 25°C is 870 mA.
  3. What is the typical RDS(on) at VGS = 4.5 V and ID = 200 mA?
    The typical RDS(on) is 340 mΩ.
  4. What is the gate-source threshold voltage (VGS(th))?
    The gate-source threshold voltage (VGS(th)) is 1 V at ID = 250 μA.
  5. What are the available package types for the PMGD175XNEAX?
    The available package types are 6-TSSOP, SC-88, and SOT-363.
  6. Is the PMGD175XNEAX RoHS compliant?
    Yes, the PMGD175XNEAX is RoHS compliant.
  7. What is the operating junction temperature range of the PMGD175XNEAX?
    The operating junction temperature range is -55°C to 150°C.
  8. What are some typical applications for the PMGD175XNEAX?
    Typical applications include industrial electronics, automotive electronics, consumer electronics, and renewable energy systems.
  9. What is the input capacitance (Ciss) of the PMGD175XNEAX?
    The input capacitance (Ciss) is 45 pF at VDS = 20 V.
  10. Is the PMGD175XNEAX suitable for high-frequency applications?
    Yes, with its low capacitance values and fast switching times, it is suitable for high-frequency applications.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:900mA (Ta)
Rds On (Max) @ Id, Vgs:252mOhm @ 900mA, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.65nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:81pF @ 15V
Power - Max:390mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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Similar Products

Part Number PMGD175XNEAX PMGD175XNEX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 900mA (Ta) 870mA (Ta)
Rds On (Max) @ Id, Vgs 252mOhm @ 900mA, 4.5V 252mOhm @ 900mA, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.65nC @ 4.5V 1.65nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 81pF @ 15V 81pF @ 15V
Power - Max 390mW 260mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package 6-TSSOP 6-TSSOP

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