Overview
The NDC7001C is a dual N and P-channel enhancement mode field effect transistor (FET) produced by onsemi. This device is fabricated using onsemi's proprietary high cell density DMOS technology, designed to minimize on-state resistance, provide rugged and reliable performance, and enable fast switching. The NDC7001C is particularly suited for low voltage, low current switching, and power supply applications.
Key Specifications
| Parameter | N-Channel | P-Channel | Units |
|---|---|---|---|
| Drain-Source Voltage (VDSS) | 60 | -60 | V |
| Gate-Source Voltage (VGSS) | ±20 | ±20 | V |
| Continuous Drain Current (ID) | 0.51 | -0.34 | A |
| Pulsed Drain Current (ID) | 1.5 | -1 | A |
| Maximum Power Dissipation (PD) | 0.96 | 0.9 | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to +150 | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 130 | 130 | °C/W |
| Thermal Resistance, Junction-to-Case (RθJC) | 60 | 60 | °C/W |
| On-State Drain-Source Resistance (RDS(ON)) at VGS = 10 V | 2 Ω | 5 Ω | Ω |
| On-State Drain-Source Resistance (RDS(ON)) at VGS = 4.5 V | 4 Ω | 7.5 Ω | Ω |
Key Features
- High cell density DMOS technology for low on-state resistance and fast switching.
- High saturation current and rugged performance.
- Proprietary SuperSOT-6 package for superior thermal and electrical capabilities.
- Isolated transistor configuration.
- Low voltage and low current operation, suitable for switching and power supply applications.
Applications
- Low voltage and low current switching applications.
- Power supply circuits.
- General-purpose electronic devices requiring dual N and P-channel FETs.
- Automotive and industrial control systems.
Q & A
- What is the maximum drain-source voltage for the NDC7001C?
The maximum drain-source voltage (VDSS) for both N and P channels is 60 V and -60 V, respectively.
- What is the continuous drain current rating for the NDC7001C?
The continuous drain current (ID) is 0.51 A for the N-channel and -0.34 A for the P-channel.
- What is the maximum power dissipation for the NDC7001C?
The maximum power dissipation (PD) is 0.96 W for the N-channel and 0.9 W for the P-channel.
- What is the operating temperature range for the NDC7001C?
The operating and storage temperature range is -55°C to +150°C.
- What package type is the NDC7001C available in?
The NDC7001C is available in the SuperSOT-6 (TSOT-23-6) package.
- What are the typical on-state resistances for the NDC7001C?
The on-state drain-source resistance (RDS(ON)) is 2 Ω at VGS = 10 V for the N-channel and 5 Ω at VGS = -10 V for the P-channel.
- What are the thermal resistances for the NDC7001C?
The thermal resistance from junction to ambient (RθJA) is 130°C/W, and from junction to case (RθJC) is 60°C/W.
- What is the gate-source voltage range for the NDC7001C?
The gate-source voltage (VGSS) range is ±20 V.
- Is the NDC7001C suitable for high-frequency applications?
The NDC7001C has characteristics suitable for fast switching and can be used in high-frequency applications, but specific performance depends on the application circuit.
- What is the minimum gate threshold voltage for the NDC7001C?
The minimum gate threshold voltage is approximately 1 V.
