NTJD4158CT1G
  • Share:

onsemi NTJD4158CT1G

Manufacturer No:
NTJD4158CT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 30V/20V SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTJD4158CT1G is a small signal, complementary MOSFET produced by onsemi. This device is packaged in the SC-88 (SOT-363) package, which is a compact 6-lead package measuring 2 x 2 mm. It is designed for applications requiring low RDS(on) performance and is suitable for a variety of uses including DC-DC conversion, load/power management, and load switching. The NTJD4158CT1G is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage (N-Channel) VDSS 30 V
Drain-to-Source Voltage (P-Channel) VDSS -20 V
Gate-to-Source Voltage (N-Channel) VGS ±20 V
Gate-to-Source Voltage (P-Channel) VGS ±12 V
Continuous Drain Current (N-Channel) at TA = 25°C ID 0.25 A
Continuous Drain Current (P-Channel) at TA = 25°C ID -0.88 A
Power Dissipation at TA = 25°C PD 0.27 W
Operating Junction and Storage Temperature TJ, Tstg -55 to 150 °C
Lead Temperature for Soldering TL 260 °C
Junction-to-Ambient Thermal Resistance RθJA 460 °C/W

Key Features

  • Leading 20 V Trench for Low RDS(on) Performance
  • ESD Protected Gate
  • Compact SC-88 Package for Small Footprint (2 x 2 mm)
  • NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant

Applications

  • DC-DC Conversion
  • Load/Power Management
  • Load Switch
  • Cell Phones, MP3s, Digital Cameras, PDAs

Q & A

  1. What is the package type of the NTJD4158CT1G?

    The NTJD4158CT1G is packaged in the SC-88 (SOT-363) package.

  2. What are the maximum drain-to-source voltages for N-Channel and P-Channel?

    The maximum drain-to-source voltage for the N-Channel is 30 V, and for the P-Channel, it is -20 V.

  3. What is the continuous drain current rating at 25°C for N-Channel and P-Channel?

    The continuous drain current rating at 25°C for the N-Channel is 0.25 A, and for the P-Channel, it is -0.88 A.

  4. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55 to 150 °C.

  5. Is the NTJD4158CT1G suitable for automotive applications?
  6. What are some common applications of the NTJD4158CT1G?
  7. Is the NTJD4158CT1G ESD protected?
  8. What is the thermal resistance rating for the NTJD4158CT1G?

    The junction-to-ambient thermal resistance is 460 °C/W.

  9. Is the NTJD4158CT1G RoHS compliant?
  10. What is the lead temperature for soldering purposes?

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V, 20V
Current - Continuous Drain (Id) @ 25°C:250mA, 880mA
Rds On (Max) @ Id, Vgs:1.5Ohm @ 10mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:1.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:33pF @ 5V
Power - Max:270mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
0 Remaining View Similar

In Stock

$0.44
469

Please send RFQ , we will respond immediately.

Same Series
NTJD4158CT2G
NTJD4158CT2G
MOSFET N/P-CH 30V/20V SC88-6

Similar Products

Part Number NTJD4158CT1G NTJD4158CT2G
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V, 20V 30V, 20V
Current - Continuous Drain (Id) @ 25°C 250mA, 880mA 250mA, 880mA
Rds On (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4.5V 1.5Ohm @ 10mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 100µA 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 5V 1.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 33pF @ 5V 33pF @ 5V
Power - Max 270mW 270mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

Related Product By Categories

IPG20N04S4L08ATMA1
IPG20N04S4L08ATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
FDC6561AN-NB5S007A
FDC6561AN-NB5S007A
onsemi
FET 30V 95.0 MOHM SSOT6
IRF7342TRPBF
IRF7342TRPBF
Infineon Technologies
MOSFET 2P-CH 55V 3.4A 8-SOIC
FDMQ86530L
FDMQ86530L
onsemi
MOSFET 4N-CH 60V 8A 12MLP
NX7002AKS,115
NX7002AKS,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.17A SC-88
NTJD4152PT1G
NTJD4152PT1G
onsemi
MOSFET 2P-CH 20V 0.88A SOT-363
NVMFD5C470NLWFT1G
NVMFD5C470NLWFT1G
onsemi
MOSFET 2N-CH 40V 36A S08FL
NTND31225CZTAG
NTND31225CZTAG
onsemi
MOSFET DUAL 20V XLLGA6
ECH8667-TL-HX
ECH8667-TL-HX
onsemi
MOSFET 2P-CH 30V 5.5A ECH8
MCH6664-TL-W
MCH6664-TL-W
onsemi
MOSFET 2P-CH 30V 1.5A SOT363
VEC2315-TL-W
VEC2315-TL-W
onsemi
MOSFET 2P-CH 60V 2.5A VEC8
FDG6303N_G
FDG6303N_G
onsemi
INTEGRATED CIRCUIT

Related Product By Brand

SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC