Overview
The PMZB290UNE is a 20 V, single N-channel Trench MOSFET produced by NXP USA Inc. This Field-Effect Transistor (FET) is designed for high-performance applications, leveraging Trench MOSFET technology to offer superior switching characteristics and low power loss. The device is packaged in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package, making it ideal for space-constrained designs.
Key Specifications
| Parameter | Value |
|---|---|
| Type number | PMZB290UNE |
| Package version | SOT883B |
| Package name | DFN1006B-3 |
| Product status | End of life |
| Channel type | N |
| Number of transistors | 1 |
| VDS [max] (V) | 20 |
| VGS [max] (V) | 8 |
| RDSon [max] @ VGS = 4.5 V; @25°C (mΩ) | 380 |
| RDSon [max] @ VGS = 2.5 V (mΩ) | 620 |
| Tj [max] (°C) | 150 |
| ID [max] (A) | 1 |
| QGD [typ] (nC) | 0.15 |
| QG(tot) [typ] @ VGS = 4.5 V (nC) | 0.45 |
| Ptot [max] (W) | 0.36 |
| VGSth [typ] (V) | 0.75 |
| Automotive qualified | No |
| Ciss [typ] (pF) | 55 |
| Coss [typ] (pF) | 15 |
| Release date | 2012-02-02 |
Key Features
- Very fast switching: The PMZB290UNE offers rapid switching times, making it suitable for high-speed applications.
- Low threshold voltage: This feature ensures that the MOSFET can be easily turned on with a low gate-source voltage.
- Trench MOSFET technology: This technology enhances the device's performance by reducing on-resistance and increasing switching efficiency.
- ESD protection up to 2 kV: The device includes built-in ESD protection to safeguard against electrostatic discharge.
- Ultra thin package profile of 0.37mm: The leadless ultra small DFN1006B-3 package is ideal for compact designs.
Applications
- Relay driver: Suitable for driving relays due to its high current handling and fast switching capabilities.
- High-speed line driver: Ideal for applications requiring fast signal transmission.
- Low-side load switch: Can be used to control the flow of current in low-side switching configurations.
- Switching circuits: General-purpose switching applications benefit from its low on-resistance and fast switching times.
Q & A
- What is the maximum drain-source voltage (VDS) of the PMZB290UNE?
The maximum drain-source voltage (VDS) is 20 V. - What is the package type of the PMZB290UNE?
The package type is DFN1006B-3 (SOT883B), a leadless ultra small Surface-Mounted Device (SMD) plastic package. - What is the maximum on-resistance (RDSon) at VGS = 4.5 V?
The maximum on-resistance (RDSon) at VGS = 4.5 V is 380 mΩ. - What is the maximum junction temperature (Tj) of the PMZB290UNE?
The maximum junction temperature (Tj) is 150°C. - Is the PMZB290UNE automotive qualified?
No, the PMZB290UNE is not automotive qualified. - What is the typical input capacitance (Ciss) of the PMZB290UNE?
The typical input capacitance (Ciss) is 55 pF. - What are the key features of the PMZB290UNE?
The key features include very fast switching, low threshold voltage, Trench MOSFET technology, ESD protection up to 2 kV, and an ultra thin package profile of 0.37mm. - What are some common applications of the PMZB290UNE?
Common applications include relay drivers, high-speed line drivers, low-side load switches, and general-purpose switching circuits. - What is the release date of the PMZB290UNE?
The release date is February 2, 2012. - What is the maximum continuous drain current (ID) of the PMZB290UNE?
The maximum continuous drain current (ID) is 1 A.
