Overview
The FDS9945 is a dual N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed to enhance the efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It features faster switching times and lower gate charge compared to other MOSFETs with similar RDS(on) specifications, making it easier and safer to drive, even at high frequencies. The FDS9945 is optimized for high-frequency applications and offers high reliability and low failure rates.
Key Specifications
| Parameter | Min | Typ | Max | Units |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage (BVDSS) | 60 | V | ||
| Continuous Drain Current (ID) | 3.5 | A | ||
| Drain-Source On-Resistance (RDS(on)) @ VGS = 10 V | 0.100 | Ω | ||
| Drain-Source On-Resistance (RDS(on)) @ VGS = 4.5 V | 0.200 | Ω | ||
| Gate Threshold Voltage (VGS(th)) | 1 | 2.5 | 3 | V |
| Gate Charge (Qg) | 13 | nC | ||
| Power Dissipation (Pd) | 2 | W | ||
| Operating Temperature Range | -55 | 150 | °C | |
| Package | SO-8 |
Key Features
- Fast switching times and low gate charge, making it suitable for high-frequency applications.
- Optimized for use in switching DC/DC converters with PWM controllers.
- High density cell design for extremely low RDS(on).
- High power and current handling capability in a widely used surface mount package.
- Dual MOSFET in an 8-pin SOIC package.
- Pb-Free and Halide-Free device.
- Robust against electrical noise and interference.
- Excellent thermal performance and high reliability.
- Low power consumption and high-speed operation.
- Compact package size and low electromagnetic emissions.
Applications
The FDS9945 is particularly suited for various applications, including:
- DC/DC converters using synchronous or conventional switching PWM controllers.
- Low voltage applications such as disk drive motor control and battery-powered circuits.
- High-frequency applications requiring fast switching, low in-line power loss, and resistance to transients.
- Other applications where high surge current capability, robustness against electrical noise, and excellent thermal performance are necessary.
Q & A
- What is the maximum drain-source breakdown voltage of the FDS9945?
The maximum drain-source breakdown voltage (BVDSS) is 60 V.
- What is the continuous drain current rating of the FDS9945?
The continuous drain current (ID) is 3.5 A.
- What are the typical RDS(on) values for the FDS9945 at different VGS levels?
The RDS(on) is 0.100 Ω at VGS = 10 V and 0.200 Ω at VGS = 4.5 V.
- What is the gate threshold voltage range for the FDS9945?
The gate threshold voltage (VGS(th)) ranges from 1 V to 3 V.
- What is the gate charge (Qg) of the FDS9945?
The gate charge (Qg) is 13 nC.
- What is the operating temperature range of the FDS9945?
The operating temperature range is from -55°C to 150°C.
- What package type is the FDS9945 available in?
The FDS9945 is available in an 8-pin SOIC package.
- Is the FDS9945 Pb-Free and Halide-Free?
- What are some key applications for the FDS9945?
The FDS9945 is suited for DC/DC converters, disk drive motor control, battery-powered circuits, and other high-frequency applications.
- What are the benefits of using the FDS9945 in high-frequency applications?
The FDS9945 offers fast switching times, low gate charge, high surge current capability, and robustness against electrical noise and interference.
