Overview
The FDG8850NZ is a dual N-Channel logic level enhancement mode field effect transistor (MOSFET) produced by onsemi. It is designed using onsemi's proprietary, high cell density, DMOS technology, which minimizes on-state resistance. This device is particularly suited for low voltage applications and can replace bipolar digital transistors and small signal MOSFETs, eliminating the need for bias resistors. The FDG8850NZ is packaged in a small SC-70 6-lead package, making it ideal for space-constrained designs. It is Pb-free, halide-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | 30 | V |
| Gate to Source Voltage (VGS) | ±12 | V |
| Continuous Drain Current (ID) | 0.75 | A |
| Pulsed Drain Current (ID) | 2.2 | A |
| Power Dissipation (PD) | 0.36 | W |
| Operating and Storage Junction Temperature Range | -55 to +150 | °C |
| Static Drain to Source On Resistance (RDS(on)) at VGS = 4.5 V, ID = 0.75 A | 0.4 | Ω |
| Static Drain to Source On Resistance (RDS(on)) at VGS = 2.7 V, ID = 0.67 A | 0.5 | Ω |
| Gate to Source Threshold Voltage (VGS(th)) | 0.65 to 1.5 | V |
| Thermal Resistance, Junction to Ambient (RJA) | 350 to 415 | °C/W |
| Package Type | SC-70 6 Lead (SOT-363) |
Key Features
- Very low on-state resistance (RDS(on)) of 0.4 Ω at VGS = 4.5 V and ID = 0.75 A, and 0.5 Ω at VGS = 2.7 V and ID = 0.67 A.
- Low level gate drive requirements, allowing operation in 3 V circuits with VGS(th) < 1.5 V.
- Small package outline (SC-70 6 Lead) for space-efficient designs.
- Pb-free, halide-free, and RoHS compliant.
- High cell density DMOS technology for improved performance.
- No bias resistors required, making it a versatile replacement for multiple digital transistors.
- Soft reverse recovery body diode performance, eliminating the need for snubber circuits.
Applications
The FDG8850NZ is suitable for a variety of low voltage applications, including:
- Replacement for bipolar digital transistors and small signal MOSFETs.
- Use in AC/DC power supplies, particularly in synchronous rectification.
- Implementation in power management circuits where low on-state resistance and fast switching are critical.
- Integration into automotive, industrial, and consumer electronics where space and efficiency are key considerations.
Q & A
- What is the maximum drain to source voltage (VDS) of the FDG8850NZ?
The maximum drain to source voltage (VDS) is 30 V. - What is the continuous drain current (ID) rating of the FDG8850NZ?
The continuous drain current (ID) is 0.75 A. - What is the typical on-state resistance (RDS(on)) at VGS = 4.5 V and ID = 0.75 A?
The typical on-state resistance (RDS(on)) is 0.4 Ω. - Is the FDG8850NZ RoHS compliant?
Yes, the FDG8850NZ is Pb-free, halide-free, and RoHS compliant. - What is the package type of the FDG8850NZ?
The package type is SC-70 6 Lead (SOT-363). - What are the operating and storage junction temperature ranges for the FDG8850NZ?
The operating and storage junction temperature range is -55 to +150 °C. - What is the gate to source threshold voltage (VGS(th)) range?
The gate to source threshold voltage (VGS(th)) range is 0.65 to 1.5 V. - Does the FDG8850NZ require bias resistors?
No, the FDG8850NZ does not require bias resistors. - What are some typical applications of the FDG8850NZ?
Typical applications include replacement for bipolar digital transistors, use in AC/DC power supplies, and integration into power management circuits. - What is the thermal resistance, junction to ambient (RJA), for the FDG8850NZ?
The thermal resistance, junction to ambient (RJA), ranges from 350 to 415 °C/W depending on the mounting conditions.
