FDC6561AN
  • Share:

onsemi FDC6561AN

Manufacturer No:
FDC6561AN
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 2.5A SSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC6561AN is a dual N-Channel Logic Level PowerTrench MOSFET produced by onsemi. This device is particularly suited for applications where small size and low cost are critical, such as in battery-powered systems and DC/DC conversion circuits. The FDC6561AN leverages onsemi's advanced PowerTrench process, ensuring high performance and efficiency in a compact package.

Key Specifications

ParameterValue
Configuration2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Continuous Drain Current (Id)2.5A
Power Dissipation (Pd)0.96W
Gate Threshold Voltage (Vgs(th))Logic Level Gate
Package TypeSuperSOT-6

Key Features

  • Dual N-Channel configuration for enhanced functionality in a single package.
  • Logic Level Gate for easy interface with logic circuits.
  • High performance and efficiency due to onsemi's PowerTrench process.
  • Compact SuperSOT-6 package suitable for space-constrained designs.
  • Low cost and high reliability, making it ideal for battery-powered systems and DC/DC converters.

Applications

The FDC6561AN is well-suited for a variety of applications, including:

  • Battery-powered systems where low power consumption and small size are essential.
  • DC/DC conversion circuits requiring high efficiency and reliability.
  • Portable electronics and mobile devices.
  • Automotive and industrial control systems.

Q & A

  1. What is the configuration of the FDC6561AN MOSFET? The FDC6561AN is a dual N-Channel MOSFET.
  2. What is the maximum drain to source voltage (Vdss) of the FDC6561AN? The maximum Vdss is 30V.
  3. What is the continuous drain current (Id) of the FDC6561AN? The continuous drain current is 2.5A.
  4. What is the power dissipation (Pd) of the FDC6561AN? The power dissipation is 0.96W.
  5. What type of gate does the FDC6561AN have? The FDC6561AN has a logic level gate.
  6. In what package is the FDC6561AN available? The FDC6561AN is available in a SuperSOT-6 package.
  7. What process is used to manufacture the FDC6561AN? The FDC6561AN is manufactured using onsemi's advanced PowerTrench process.
  8. Is the FDC6561AN suitable for battery-powered systems? Yes, it is particularly suited for battery-powered systems due to its low power consumption and small size.
  9. Can the FDC6561AN be used in DC/DC conversion circuits? Yes, it is well-suited for DC/DC conversion circuits requiring high efficiency and reliability.
  10. What are some common applications of the FDC6561AN? Common applications include portable electronics, mobile devices, automotive systems, and industrial control systems.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:2.5A
Rds On (Max) @ Id, Vgs:95mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:220pF @ 15V
Power - Max:700mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:SuperSOT™-6
0 Remaining View Similar

In Stock

$0.59
906

Please send RFQ , we will respond immediately.

Related Product By Categories

BSS84AKV,115
BSS84AKV,115
Nexperia USA Inc.
MOSFET 2P-CH 50V 170MA SOT666
2N7002BKS,115
2N7002BKS,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.3A 6TSSOP
NX1029X,115
NX1029X,115
Nexperia USA Inc.
MOSFET N/P-CH 60V/50V SOT666
FDG6303N
FDG6303N
onsemi
MOSFET 2N-CH 25V 500MA SC88
PMDPB70XPE,115
PMDPB70XPE,115
Nexperia USA Inc.
MOSFET 2P-CH 20V 3A 6HUSON
STL40DN3LLH5
STL40DN3LLH5
STMicroelectronics
MOSFET 2N-CH 30V 40A POWERFLAT56
NTHD4102PT1G
NTHD4102PT1G
onsemi
MOSFET 2P-CH 20V 2.9A CHIPFET
PMV20XNEA,215
PMV20XNEA,215
Nexperia USA Inc.
6.3A, 20V, N CHANNEL, SILICON, M
NVMD3P03R2G
NVMD3P03R2G
Fairchild Semiconductor
SMALL SIGNAL FIELD-EFFECT TRANSI
BSS138DW-7
BSS138DW-7
Diodes Incorporated
MOSFET 2N-CH 50V 0.2A SC70-6
2N7002DWKX-7
2N7002DWKX-7
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363
BSS138DW-7-F-79
BSS138DW-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN