FDC6561AN
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onsemi FDC6561AN

Manufacturer No:
FDC6561AN
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 2.5A SSOT6
Delivery:
Payment:
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Product Introduction

Overview

The FDC6561AN is a dual N-Channel Logic Level PowerTrench MOSFET produced by onsemi. This device is particularly suited for applications where small size and low cost are critical, such as in battery-powered systems and DC/DC conversion circuits. The FDC6561AN leverages onsemi's advanced PowerTrench process, ensuring high performance and efficiency in a compact package.

Key Specifications

ParameterValue
Configuration2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Continuous Drain Current (Id)2.5A
Power Dissipation (Pd)0.96W
Gate Threshold Voltage (Vgs(th))Logic Level Gate
Package TypeSuperSOT-6

Key Features

  • Dual N-Channel configuration for enhanced functionality in a single package.
  • Logic Level Gate for easy interface with logic circuits.
  • High performance and efficiency due to onsemi's PowerTrench process.
  • Compact SuperSOT-6 package suitable for space-constrained designs.
  • Low cost and high reliability, making it ideal for battery-powered systems and DC/DC converters.

Applications

The FDC6561AN is well-suited for a variety of applications, including:

  • Battery-powered systems where low power consumption and small size are essential.
  • DC/DC conversion circuits requiring high efficiency and reliability.
  • Portable electronics and mobile devices.
  • Automotive and industrial control systems.

Q & A

  1. What is the configuration of the FDC6561AN MOSFET? The FDC6561AN is a dual N-Channel MOSFET.
  2. What is the maximum drain to source voltage (Vdss) of the FDC6561AN? The maximum Vdss is 30V.
  3. What is the continuous drain current (Id) of the FDC6561AN? The continuous drain current is 2.5A.
  4. What is the power dissipation (Pd) of the FDC6561AN? The power dissipation is 0.96W.
  5. What type of gate does the FDC6561AN have? The FDC6561AN has a logic level gate.
  6. In what package is the FDC6561AN available? The FDC6561AN is available in a SuperSOT-6 package.
  7. What process is used to manufacture the FDC6561AN? The FDC6561AN is manufactured using onsemi's advanced PowerTrench process.
  8. Is the FDC6561AN suitable for battery-powered systems? Yes, it is particularly suited for battery-powered systems due to its low power consumption and small size.
  9. Can the FDC6561AN be used in DC/DC conversion circuits? Yes, it is well-suited for DC/DC conversion circuits requiring high efficiency and reliability.
  10. What are some common applications of the FDC6561AN? Common applications include portable electronics, mobile devices, automotive systems, and industrial control systems.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:2.5A
Rds On (Max) @ Id, Vgs:95mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:220pF @ 15V
Power - Max:700mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:SuperSOT™-6
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