Overview
The STS8DNF3LL is a dual N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET process. This process is designed to minimize input capacitance and gate charge, making the device highly suitable for applications requiring low gate charge driving and high efficiency. The MOSFET is packaged in an SO-8 format and is ideal for use as the primary switch in advanced high-efficiency isolated DC-DC converters, particularly in telecom and computer applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 30 | V |
| Gate-Source Voltage (VGS) | ±16 | V |
| Drain Current (ID) - Continuous at TC = 25 °C | 8 | A |
| Drain Current (ID) - Continuous at TC = 100 °C | 5 | A |
| Drain Current (IDM) - Pulsed | 32 | A |
| Total Dissipation at TC = 25 °C - Single Operating | 1.6 | W |
| Thermal Resistance Junction-Ambient (Rthj-amb) - Single Operating | 78 | °C/W |
| Thermal Operating Junction Temperature (TJ) | -55 to 150 | °C |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 4 A | 0.017 - 0.020 | Ω |
| Total Gate Charge (Qg) at VDD = 15 V, ID = 8 A, VGS = 5 V | 12.5 - 17 | nC |
Key Features
- Optimal RDS(on) x Qg trade-off @ 4.5 V, reducing conduction and switching losses.
- Minimized input capacitance and gate charge due to STripFET process.
- Suitable for high-efficiency isolated DC-DC converters.
- Low gate charge driving requirements.
Applications
- Advanced high-efficiency isolated DC-DC converters for telecom and computer applications.
- Applications with low gate charge driving requirements.
Q & A
- What is the maximum drain-source voltage (VDS) of the STS8DNF3LL?
The maximum drain-source voltage (VDS) is 30 V.
- What is the continuous drain current (ID) at TC = 25 °C?
The continuous drain current (ID) at TC = 25 °C is 8 A.
- What is the thermal operating junction temperature (TJ) range?
The thermal operating junction temperature (TJ) range is -55 to 150 °C.
- What is the typical static drain-source on-resistance (RDS(on)) at VGS = 10 V, ID = 4 A?
The typical static drain-source on-resistance (RDS(on)) at VGS = 10 V, ID = 4 A is 0.017 - 0.020 Ω.
- What is the total gate charge (Qg) at VDD = 15 V, ID = 8 A, VGS = 5 V?
The total gate charge (Qg) at VDD = 15 V, ID = 8 A, VGS = 5 V is 12.5 - 17 nC.
- In what package is the STS8DNF3LL available?
The STS8DNF3LL is available in an SO-8 package.
- What process is used to develop the STS8DNF3LL?
The STS8DNF3LL is developed using STMicroelectronics' unique STripFET process.
- What are the primary applications of the STS8DNF3LL?
The primary applications include advanced high-efficiency isolated DC-DC converters for telecom and computer applications.
- What are the benefits of the STripFET process in the STS8DNF3LL?
The STripFET process minimizes input capacitance and gate charge, reducing conduction and switching losses.
- Is the STS8DNF3LL RoHS compliant?
Yes, the STS8DNF3LL is available in ECOPACK® packages which meet environmental compliance standards.
