BC857BS-F2-0000HF
  • Share:

Yangzhou Yangjie Electronic Technology Co.,Ltd BC857BS-F2-0000HF

Manufacturer No:
BC857BS-F2-0000HF
Manufacturer:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Package:
Tape & Reel (TR)
Description:
PNP+PNP TRANS 45V 0.2A SOT-363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857BS is a PNP general-purpose double transistor packaged in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. This transistor is designed for general-purpose switching and amplification applications. It is part of a family of transistors that include the BC847BS as its NPN complement.

Key Specifications

CharacteristicSymbolMinTypMaxUnitTest Condition
Collector-Base Breakdown VoltageV(BR)CBO-50VIC = 100µA, IB = 0
Collector-Emitter Breakdown VoltageV(BR)CEO-45VIC = 10mA, IB = 0
Emitter-Base Breakdown VoltageV(BR)EBO-5VIE = 100µA, IC = 0
DC Current GainhFE220475VCE = -5.0V, IC = -2.0mA
Collector-Emitter Saturation VoltageVCE(sat)-0.3VIC = -10mA, IB = -0.5mA
Power DissipationPD200mW
Thermal Resistance, Junction to Ambient AirRθJA625°C/W
Operating and Storage Temperature RangeTJ, TSTG-55150°C

Key Features

  • Ultra-Small Surface Mount Package: The BC857BS is packaged in a very small SOT363 (SC-88) package, making it ideal for space-constrained designs.
  • Low Collector Capacitance: This feature enhances the transistor's performance in high-frequency applications.
  • Low Collector-Emitter Saturation Voltage: Reduces power consumption and improves efficiency.
  • Closely Matched Current Gain: Ensures consistent performance across the two transistors in the package.
  • No Mutual Interference: The design minimizes interference between the two transistors.
  • Automated Insertion: Suitable for automated insertion processes.
  • Totally Lead-Free & Fully RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
  • Qualified to AEC-Q101 Standards: Ensures high reliability for automotive and other demanding applications.

Applications

The BC857BS is versatile and can be used in various applications, including general-purpose switching, amplifier applications, automotive, industrial, and consumer electronics.

Q & A

Q1: What is the package type of the BC857BS transistor?
A1: The BC857BS transistor is packaged in a SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

Q2: What are the key features of the BC857BS transistor?
A2: Key features include ultra-small surface mount package, low collector capacitance, low collector-emitter saturation voltage, closely matched current gain, and no mutual interference between the transistors.

Q3: What is the maximum collector current of the BC857BS transistor?
A3: The maximum collector current (IC) is -100 mA, with a peak collector current (ICM) of -200 mA.

Q4: Is the BC857BS transistor RoHS compliant?
A4: Yes, the BC857BS transistor is totally lead-free and fully RoHS compliant.

Q5: What are the operating and storage temperature ranges for the BC857BS transistor?
A5: The operating and storage temperature range is from -55°C to +150°C.

Q6: What is the thermal resistance (RθJA) of the BC857BS transistor?
A6: The thermal resistance, junction to ambient air (RθJA), is 625 °C/W.

Q7: Can the BC857BS transistor be used in automotive applications?
A7: Yes, it is qualified to AEC-Q101 standards, making it suitable for high-reliability automotive applications.

Q8: What is the maximum power dissipation (PD) of the BC857BS transistor?
A8: The maximum power dissipation (PD) is 200 mW.

Q9: Is the BC857BS transistor suitable for automated insertion?
A9: Yes, it is ideally suited for automated insertion processes.

Q10: What is the NPN complement of the BC857BS transistor?
A10: The NPN complement of the BC857BS transistor is the BC847BS.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:300mW
Frequency - Transition:200MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

$0.21
2,411

Please send RFQ , we will respond immediately.

Same Series
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

MBT2222ADW1T1G
MBT2222ADW1T1G
onsemi
TRANS 2NPN 40V 0.6A SC88/SC70-6
BC847SH6327XTSA1
BC847SH6327XTSA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363-6
ULN2803A
ULN2803A
STMicroelectronics
TRANS 8NPN DARL 50V 0.5A 18DIP
NST3906DXV6T1G
NST3906DXV6T1G
onsemi
TRANS 2PNP 40V 0.2A SOT563
NSV40302PDR2G
NSV40302PDR2G
onsemi
TRANS NPN/PNP 40V 3A 8SOIC
BC817DS-25_R1_00001
BC817DS-25_R1_00001
Panjit International Inc.
DUAL NPN GENERAL PURPOSE TRANSIS
ULN2803APG,CN
ULN2803APG,CN
Toshiba Semiconductor and Storage
TRANS 8NPN DARL 50V 0.5A 18DIP
BC847BPDXV6T5G
BC847BPDXV6T5G
onsemi
TRANS NPN/PNP 45V 0.1A SOT563
BC857BDW1T1
BC857BDW1T1
onsemi
TRANS PNP DUAL 45V 100MA SOT-363
ULN2803ANG4
ULN2803ANG4
Texas Instruments
TRANS 8NPN DARL 50V 0.5A 18DIP
BC847SH6359XTMA1
BC847SH6359XTMA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BC847BSH-QF
BC847BSH-QF
Nexperia USA Inc.
BC847BSH-QF

Related Product By Brand

BAW56WT-F2-0000HF
BAW56WT-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
GEN PURP DIODE 75V 0.15A SOT-32
MBRB20200CT-F1-0000HF
MBRB20200CT-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 200V 20A TO-263
MUR1620CT-B1-0000HF
MUR1620CT-B1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
FAST DIODE 200V 16A TO-220AB
1N4148WS-F2-0000HF
1N4148WS-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 100V 150MA SOD323
BAT54XV2-F2-0000HF
BAT54XV2-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 30V 200MA SOD523
1N4004G-D1-3000
1N4004G-D1-3000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 400V 1A DO41
BAS21J-F2-0000HF
BAS21J-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
GEN PURP DIODE 300V 0.225A SOD-
BAS21-F2-0000HF
BAS21-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 250V 200MA SOT23
MUR160-D1-0000
MUR160-D1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 1A DO41
BZX84B30-F2-0000HF
BZX84B30-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
ZENER DIODE 30V 0.35W SOT-23-3L
BC847C-F2-0000HF
BC847C-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS NPN 45V 0.1A SOT23
2N7002KDW-F2-0000HF
2N7002KDW-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 0.34A SOT-363