BSS84-F2-0000HF
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Yangzhou Yangjie Electronic Technology Co.,Ltd BSS84-F2-0000HF

Manufacturer No:
BSS84-F2-0000HF
Manufacturer:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Package:
Tape & Reel (TR)
Description:
P-CH MOSFET 60V 0.17A SOT-23-3L
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84-F2-0000HF is a P-channel enhancement-mode field-effect transistor (MOSFET) produced by Yangzhou Yangjie Electronic Technology Co., Ltd. This device is designed using high cell density DMOS technology, which minimizes on-state resistance and provides rugged and reliable performance along with fast switching capabilities. It is particularly suited for low-voltage applications requiring a low-current high-side switch and can deliver currents up to 0.52 A, with a continuous drain current of 0.13 A.

Key Specifications

Parameter Unit Typical Maximum
Drain-Source Voltage (VDSS) V - -50
Gate-Source Voltage (VGSS) V - ±20
Continuous Drain Current (ID) A - -0.13
Pulsed Drain Current (ID) A - -0.52
Maximum Power Dissipation (PD) W - 0.36
On-State Resistance (RDS(on)) at VGS = -5 V Ω - 10
Operating and Storage Junction Temperature Range (TJ, TSTG) °C -55 to +150 -

Key Features

  • Low On-Resistance (RDS(on))
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free and Fully RoHS Compliant
  • Halogen and Antimony Free (Green Device)
  • Voltage-Controlled P-Channel Small-Signal Switch
  • High-Density Cell Design for Low RDS(on)
  • High Saturation Current

Applications

The BSS84-F2-0000HF is suitable for a variety of applications, including:

  • Low-voltage power management
  • High-side switching in automotive electronics
  • Industrial control systems
  • Consumer electronics
  • Power supply circuits
  • LED lighting and other low-current switching applications

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the BSS84-F2-0000HF?

    The maximum drain-source voltage (VDSS) is -50 V.

  2. What is the continuous drain current (ID) of the BSS84-F2-0000HF?

    The continuous drain current (ID) is -0.13 A.

  3. What is the on-state resistance (RDS(on)) of the BSS84-F2-0000HF at VGS = -5 V?

    The on-state resistance (RDS(on)) at VGS = -5 V is 10 Ω.

  4. Is the BSS84-F2-0000HF RoHS compliant?

    Yes, the BSS84-F2-0000HF is totally lead-free and fully RoHS compliant.

  5. What are the typical applications of the BSS84-F2-0000HF?

    The BSS84-F2-0000HF is typically used in low-voltage power management, high-side switching in automotive electronics, industrial control systems, consumer electronics, and other low-current switching applications.

  6. What is the operating and storage junction temperature range of the BSS84-F2-0000HF?

    The operating and storage junction temperature range is -55 to +150 °C.

  7. Does the BSS84-F2-0000HF have fast switching capabilities?

    Yes, the BSS84-F2-0000HF is designed for fast switching performance.

  8. Is the BSS84-F2-0000HF suitable for automotive applications?

    Yes, the BSS84-F2-0000HF is suitable for automotive applications and is AEC-Q101 qualified.

  9. What is the maximum power dissipation (PD) of the BSS84-F2-0000HF?

    The maximum power dissipation (PD) is 0.36 W.

  10. What package types are available for the BSS84-F2-0000HF?

    The BSS84-F2-0000HF is available in SOT-23-3 packages.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.77 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:43 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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