2N7002KW-F2-0000HF
  • Share:

Yangzhou Yangjie Electronic Technology Co.,Ltd 2N7002KW-F2-0000HF

Manufacturer No:
2N7002KW-F2-0000HF
Manufacturer:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Package:
Tape & Reel (TR)
Description:
N-CH MOSFET 60V 0.34A SOT-323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002KW-F2-0000HF is a N-channel enhancement mode MOSFET produced by Yangzhou Yangjie Electronic Technology Co., Ltd., a leading IDM (Integrated Device Manufacturer) in China. This component is designed for a variety of applications requiring low on-resistance and high switching speeds.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)60V
VGS (Gate-Source Voltage)20V
ID (Continuous Drain Current)0.5A
RDS(on) (On-Resistance)1.5Ω
PD (Power Dissipation)1.25W
TJ (Junction Temperature)-55 to 150°C
PackageSOT-323

Key Features

Low On-Resistance: The 2N7002KW-F2-0000HF features a low on-resistance, making it suitable for applications requiring high efficiency and minimal power loss.
High Switching Speed: This MOSFET is designed for high-speed switching applications, ensuring fast and reliable operation.
Compact Package: The SOT-323 package is compact and suitable for space-constrained designs.
Wide Operating Temperature Range: The component can operate over a wide temperature range, making it versatile for various environmental conditions.

Applications

Automotive Electronics: Used in automotive systems for power management and control.
Industrial Control: Suitable for industrial control systems, motor control, and power supplies.
Consumer Electronics: Applied in consumer electronics such as power adapters, LED lighting, and other portable devices.
Power Supply: Used in power supply units for efficient power management.

Q & A

  • Q: What is the maximum drain-source voltage of the 2N7002KW-F2-0000HF?

    A: The maximum drain-source voltage (VDS) is 60 V.

  • Q: What is the typical on-resistance of this MOSFET?

    A: The typical on-resistance (RDS(on)) is 1.5 Ω.

  • Q: What is the package type of the 2N7002KW-F2-0000HF?

    A: The package type is SOT-323.

  • Q: What are the typical applications of this MOSFET?

    A: It is used in automotive electronics, industrial control, consumer electronics, and power supply units.

  • Q: What is the continuous drain current rating of this component?

    A: The continuous drain current (ID) is 0.5 A.

  • Q: What is the junction temperature range of the 2N7002KW-F2-0000HF?

    A: The junction temperature range is -55°C to 150°C.

  • Q: Is this MOSFET suitable for high-speed switching applications?

    A: Yes, it is designed for high-speed switching applications.

  • Q: What is the power dissipation rating of this component?

    A: The power dissipation (PD) is 1.25 W.

  • Q: Can this MOSFET be used in LED lighting applications?

    A: Yes, it can be used in LED lighting applications due to its low on-resistance and high efficiency.

  • Q: Where can I find more detailed specifications and datasheets for this component?

    A: You can find detailed specifications and datasheets on the official website of Yangzhou Yangjie Electronic Technology Co., Ltd. or through authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:30 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.29
2,865

Please send RFQ , we will respond immediately.

Same Series
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number 2N7002KW-F2-0000HF 2N7002W-F2-0000HF
Manufacturer Yangzhou Yangjie Electronic Technology Co.,Ltd Yangzhou Yangjie Electronic Technology Co.,Ltd
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 340mA (Ta) 340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 300mA, 10V 2.5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.4 nC @ 10 V 1.6 nC @ 10 V
Vgs (Max) ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 30 V 27.5 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 350mW (Ta) 150mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323
Package / Case SC-70, SOT-323 SC-70, SOT-323

Related Product By Categories

STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

SMBJ5.0CA-F1-0000HF
SMBJ5.0CA-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TVS DIODE 5VWM 9.2VC DO214AA
BAS70-05-F2-0000HF
BAS70-05-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 70V 0.07A SOT-23-
BAV70WT-F2-0000HF
BAV70WT-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
GEN PURP DIODE 75V 0.15A SOT-32
MBR10100CD-F1-0000HF
MBR10100CD-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 100V 10A TO-252
MBR10100FCT-B1-0000HF
MBR10100FCT-B1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 100V 10A ITO-220A
BAS316-F2-0000HF
BAS316-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 100V 250MA SOD323
BAS16WT-F2-0000HF
BAS16WT-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 100V 150MA SOT323
1N4148W-F2-0001HF
1N4148W-F2-0001HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 150MA SOD123
BAS21-F2-0000HF
BAS21-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 250V 200MA SOT23
BZX84B30-F2-0000HF
BZX84B30-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
ZENER DIODE 30V 0.35W SOT-23-3L
BC807-25W-F2-0000HF
BC807-25W-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS PNP 45V 0.5A SOT323
BC847CW-F2-0000HF
BC847CW-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS NPN 45V 0.1A SOT323