2N7002KDW-F2-0000HF
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Yangzhou Yangjie Electronic Technology Co.,Ltd 2N7002KDW-F2-0000HF

Manufacturer No:
2N7002KDW-F2-0000HF
Manufacturer:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Package:
Tape & Reel (TR)
Description:
N-CH MOSFET 60V 0.34A SOT-363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002KDW-F2-0000HF is an N-Channel Enhancement Mode Field Effect Transistor (MOSFET) produced by Yangzhou Yangjie Electronic Technology Co., Ltd. This device is part of the company's extensive range of discrete semiconductor products and is designed for various applications requiring low input capacitance and fast switching speeds. The 2N7002KDW-F2-0000HF is particularly suited for use in battery-operated systems, solid-state relays, and direct logic-level interfaces such as TTL/CMOS.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (Vds)60V
Gate to Source Voltage (Vgs)±30V
Continuous Drain Current (Id) @ 25°C340mA
Pulsed Drain Current (Idm)1.5A
Total Power Dissipation (Pd) @ 25°C350mW
On-Resistance (Rds(on)) @ Vgs=10V, Id=300mA2.5Ω
Gate Threshold Voltage (Vgs(th)) @ Id=250µA1-2.5V
Input Capacitance (Ciss) @ Vds=30V30pF
Total Gate Charge (Qg) @ Vgs=10V, Vds=30V2.4nC
Operating Temperature Range-55°C to +150°C°C
Package/Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount

Key Features

  • Trench Power MV MOSFET technology for enhanced performance.
  • Low input capacitance and fast switching speeds.
  • ESD protected up to 2KV (HBM).
  • Halogen-free and RoHS compliant.
  • Epoxy meets UL 94 V-0 flammability rating.
  • Lead-free finish.
  • Moisture Sensitivity Level 1.

Applications

  • Battery-operated systems.
  • Solid-state relays.
  • Direct logic-level interfaces: TTL/CMOS.
  • Automotive electronics.
  • Industrial and power supply systems.
  • Home appliances and LED lighting.
  • Security and telecommunication systems.
  • Consumer electronics.

Q & A

  1. What is the maximum drain to source voltage of the 2N7002KDW-F2-0000HF?
    The maximum drain to source voltage is 60V.
  2. What is the continuous drain current at 25°C?
    The continuous drain current at 25°C is 340mA.
  3. What is the total power dissipation at 25°C?
    The total power dissipation at 25°C is 350mW.
  4. What is the on-resistance at Vgs=10V and Id=300mA?
    The on-resistance at Vgs=10V and Id=300mA is 2.5Ω.
  5. What is the gate threshold voltage range?
    The gate threshold voltage range is 1-2.5V.
  6. Is the device ESD protected?
    Yes, the device is ESD protected up to 2KV (HBM).
  7. Is the device RoHS compliant?
    Yes, the device is RoHS compliant and halogen-free.
  8. What is the operating temperature range of the device?
    The operating temperature range is -55°C to +150°C.
  9. What are the typical applications of the 2N7002KDW-F2-0000HF?
    The typical applications include battery-operated systems, solid-state relays, and direct logic-level interfaces such as TTL/CMOS.
  10. What is the moisture sensitivity level of the device?
    The moisture sensitivity level is 1.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:340mA (Ta)
Rds On (Max) @ Id, Vgs:2.5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:30pF @ 30V
Power - Max:350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
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