Overview
The BAS316 is a high-speed switching diode manufactured by Nexperia, although the specific part number 'BAS316-F2-0000HF' seems to be a variant or a similar product potentially distributed or repackaged by Yangzhou Yangjie Electronic Technology Co., Ltd. This diode is encapsulated in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package, making it suitable for compact and high-performance electronic designs.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Reverse Voltage (VR) | Tj = 25 °C | - | - | 100 | V |
| Repetitive Peak Reverse Voltage (VRRM) | Tj = 25 °C | - | - | 100 | V |
| Reverse Current (IR) | VR = 80 V; Tj = 25 °C | - | - | 0.5 | µA |
| Reverse Recovery Time (trr) | IF = 10 mA; IR = 10 mA; RL = 100 Ω; Tamb = 25 °C | - | - | 4 | ns |
| Forward Voltage (VF) | IF = 1 mA | - | - | 715 | mV |
| Forward Voltage (VF) | IF = 10 mA | - | - | 855 | mV |
| Forward Voltage (VF) | IF = 150 mA | - | - | 1.25 | V |
| Diode Capacitance (Cd) | VR = 0 V; f = 1 MHz; Tj = 25 °C | - | - | 1.5 | pF |
| Junction Temperature (Tj) | - | - | - | 150 | °C |
| Ambient Temperature (Tamb) | - | -65 | - | 150 | °C |
Key Features
- High Switching Speed: The BAS316 features a reverse recovery time (trr) of ≤ 4 ns, making it ideal for high-speed switching applications.
- Low Capacitance: The diode has a low capacitance of ≤ 1.5 pF at VR = 0 V and f = 1 MHz.
- Low Leakage Current: It exhibits a low reverse current of ≤ 0.5 µA at VR = 80 V and Tj = 25 °C.
- High Reverse Voltage: The diode can handle a reverse voltage of up to 100 V.
- Compact Package: Encapsulated in a small SOD323 (SC-76) SMD plastic package, suitable for space-constrained designs.
Applications
The BAS316 diode is typically used in high-speed switching and general-purpose switching applications.
Q & A
- What is the maximum reverse voltage of the BAS316 diode?
The maximum reverse voltage (VR) of the BAS316 diode is 100 V.
- What is the typical reverse recovery time of the BAS316 diode?
The typical reverse recovery time (trr) of the BAS316 diode is ≤ 4 ns.
- What is the maximum forward current of the BAS316 diode?
The maximum forward current (IF) of the BAS316 diode is 250 mA.
- What is the package type of the BAS316 diode?
The BAS316 diode is encapsulated in a SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package.
- What are the typical applications of the BAS316 diode?
The BAS316 diode is typically used in high-speed switching and general-purpose switching applications.
- What is the maximum junction temperature of the BAS316 diode?
The maximum junction temperature (Tj) of the BAS316 diode is 150 °C.
- What is the diode capacitance of the BAS316 at 1 MHz?
The diode capacitance (Cd) of the BAS316 at VR = 0 V and f = 1 MHz is ≤ 1.5 pF.
- What is the maximum ambient temperature for the BAS316 diode?
The maximum ambient temperature (Tamb) for the BAS316 diode is 150 °C).
- What is the repetitive peak forward current of the BAS316 diode?
The repetitive peak forward current (IFRM) of the BAS316 diode is 500 mA for tp ≤ 0.5 ms and δ = 0.25).
- What is the total power dissipation of the BAS316 diode?
The total power dissipation (Ptot) of the BAS316 diode is 400 mW at Tsp ≤ 90 °C).
