Overview
The BC857B-F2-0000HF is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. This transistor is designed for low-power surface mount applications and is housed in the SOT-23-3 package. It is part of the BC857 series, known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics. The device is Pb-free and RoHS compliant, making it suitable for a wide range of electronic applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | -45 | V |
| Collector-Base Voltage (VCBO) | -50 | V |
| Emitter-Base Voltage (VEBO) | -5.0 | V |
| Collector Current (IC) - Continuous | 100 | mA |
| Peak Collector Current (ICM) | 200 | mA |
| Peak Base Current (IBM) | 200 | mA |
| Total Power Dissipation (Ptot) at Tamb ≤ 25°C | 250 | mW |
| Junction Temperature (Tj) | -150 to +150 | °C |
| Storage Temperature (Tstg) | -65 to +150 | °C |
| DC Current Gain (hFE) at IC = 2 mA, VCE = 5 V | 220 - 475 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 100 mA, IB = 5 mA | 650 mV | |
| Base-Emitter Saturation Voltage (VBE(sat)) at IC = 100 mA, IB = 5 mA | 850 mV | |
| Transition Frequency (fT) at IC = 10 mA, VCE = 5 V | 100 MHz |
Key Features
- High current gain (hFE) ranging from 220 to 475 at IC = 2 mA, VCE = 5 V.
- Low collector-emitter saturation voltage (VCE(sat)) of up to 650 mV at IC = 100 mA, IB = 5 mA.
- Low noise between 30 Hz and 15 kHz.
- Pb-free and RoHS compliant package.
- AEC-Q101 qualified for automotive and other applications requiring unique site and control change requirements.
- Surface mount package (SOT-23-3) suitable for low-power applications.
Applications
The BC857B-F2-0000HF transistor is suitable for various applications, including:
- Audio frequency (AF) input stages and driver applications due to its low noise characteristics.
- General-purpose amplifier applications in electronic circuits.
- Automotive and industrial electronics where reliability and compliance with automotive standards are required.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the BC857B-F2-0000HF transistor?
The maximum collector-emitter voltage (VCEO) is -45 V. - What is the maximum collector current (IC) of the BC857B-F2-0000HF transistor?
The maximum collector current (IC) is 100 mA. - What is the typical DC current gain (hFE) of the BC857B-F2-0000HF transistor?
The typical DC current gain (hFE) ranges from 220 to 475 at IC = 2 mA, VCE = 5 V. - Is the BC857B-F2-0000HF transistor Pb-free and RoHS compliant?
Yes, the BC857B-F2-0000HF transistor is Pb-free and RoHS compliant. - What is the junction temperature range of the BC857B-F2-0000HF transistor?
The junction temperature range is -150°C to +150°C. - What is the transition frequency (fT) of the BC857B-F2-0000HF transistor?
The transition frequency (fT) is 100 MHz at IC = 10 mA, VCE = 5 V. - What are the common applications of the BC857B-F2-0000HF transistor?
The transistor is commonly used in AF input stages, driver applications, and general-purpose amplifier circuits. - Is the BC857B-F2-0000HF transistor AEC-Q101 qualified?
Yes, the BC857B-F2-0000HF transistor is AEC-Q101 qualified for automotive and other applications requiring unique site and control change requirements. - What is the package type of the BC857B-F2-0000HF transistor?
The transistor is housed in a SOT-23-3 surface mount package. - What is the maximum collector-emitter saturation voltage (VCE(sat)) of the BC857B-F2-0000HF transistor?
The maximum collector-emitter saturation voltage (VCE(sat)) is up to 650 mV at IC = 100 mA, IB = 5 mA.
