Overview
The 2N7002W-F2-0000HF is an N-Channel Enhancement Mode Field Effect Transistor (MOSFET) produced by Yangzhou Yangjie Electronic Technology Co., Ltd. This component is designed for high-efficiency power management applications, offering a balance of low on-state resistance and superior switching performance.
Key Specifications
| Parameter | Symbol | Min | Max | Unit | |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | - | - | 60 | V |
| Drain-Gate Voltage | VDGR | - | - | 60 | V |
| Gate-Source Voltage (Continuous) | VGSS | ±20 | - | ±20 | V |
| Gate-Source Voltage (Pulsed) | VGSS | - | - | ±40 | V |
| Drain Current (Continuous) | ID | - | - | 115 | mA |
| Drain Current (Pulsed) | ID | - | - | 800 | mA |
| On-State Drain-Source Resistance | RDS(on) | - | 1.19 | 1.6 | Ω |
| Gate Threshold Voltage | VGS(TH) | 1.0 | - | 2.5 | V |
| Input Capacitance | Ciss | - | - | 24.5 | pF |
| Output Capacitance | Coss | - | - | 4.2 | pF |
| Reverse Transfer Capacitance | Crss | - | - | 2.2 | pF |
Key Features
- Low On-State Resistance (RDS(on)): Ensures minimal power loss during operation.
- Low Gate Threshold Voltage: Facilitates easy switching and control.
- Low Input Capacitance: Reduces the impact on high-frequency operations.
- Fast Switching Speed: Ideal for applications requiring quick on/off times.
- Low Input/Output Leakage: Minimizes current leakage, enhancing overall efficiency.
- Ultra-Small Surface Mount Package: Suitable for compact and space-efficient designs.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Meets environmental and safety standards.
Applications
- Low Side Load Switch: Used in power management circuits to control load switching.
- Level Shift Circuits: Utilized in circuits requiring voltage level shifting.
- DC-DC Converters: Employed in power conversion applications for efficient power management.
- Portable Applications: Suitable for devices such as digital still cameras (DSC), personal digital assistants (PDA), and other portable electronics.
- Motor Control: Used in motor control circuits for efficient and reliable operation.
Q & A
- What is the maximum drain-source voltage (VDSS) of the 2N7002W-F2-0000HF MOSFET?
The maximum drain-source voltage (VDSS) is 60 V.
- What is the typical on-state drain-source resistance (RDS(on)) of this MOSFET?
The typical on-state drain-source resistance (RDS(on)) is 1.19 Ω at VGS = 10 V and ID = 500 mA.
- What is the gate threshold voltage (VGS(TH)) range for this component?
The gate threshold voltage (VGS(TH)) range is from 1.0 V to 2.5 V.
- Is the 2N7002W-F2-0000HF MOSFET RoHS compliant?
Yes, the 2N7002W-F2-0000HF MOSFET is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What are some common applications of the 2N7002W-F2-0000HF MOSFET?
Common applications include low side load switching, level shift circuits, DC-DC converters, portable applications, and motor control.
- What is the maximum continuous drain current (ID) for this MOSFET?
The maximum continuous drain current (ID) is 115 mA.
- What is the input capacitance (Ciss) of the 2N7002W-F2-0000HF MOSFET?
The input capacitance (Ciss) is 24.5 pF.
- How fast is the switching speed of this MOSFET?
The 2N7002W-F2-0000HF MOSFET has fast switching speeds, making it suitable for high-frequency applications.
- What is the thermal resistance (RθJA) of this component?
The thermal resistance (RθJA) is 625 °C/W.
- Is the 2N7002W-F2-0000HF MOSFET suitable for automotive applications?
Yes, it is suitable for automotive applications due to its robust specifications and compliance with automotive standards.
