MBR10100CD-F1-0000HF
  • Share:

Yangzhou Yangjie Electronic Technology Co.,Ltd MBR10100CD-F1-0000HF

Manufacturer No:
MBR10100CD-F1-0000HF
Manufacturer:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Package:
Tape & Reel (TR)
Description:
SCHOTTKY DIODE 100V 10A TO-252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR10100CD-F1-0000HF is a Schottky diode produced by Yangzhou Yangjie Electronic Technology Co., Ltd. This component is designed for high-frequency operations and is encapsulated in a high-purity, high-temperature epoxy package, enhancing its mechanical strength and moisture resistance. The diode is packaged in a TO-252 case, which meets UL 94 V-0 flammability ratings and is RoHS-compliant.

Key Specifications

ParameterSymbolUnitMBR10100CD
Repetitive Peak Reverse VoltageVRRMV100
Average Rectified Output Current @60Hz sine wave, R-load, Ta=25℃IOA10
Surge (Non-repetitive) Forward Current @60Hz half sine-wave, 1 cycle, Ta=25℃IFSMA120
Current Squared Time @1ms≤t<8.3ms, Tj=25℃I2tA²s60
Storage TemperatureTstg-55 ~ +175
Junction TemperatureTj-55 ~ +175
Maximum instantaneous forward voltage drop per diodeVFMV0.8 (IFM=5.0A)
Maximum DC reverse current at rated DC blocking voltage per diodeIRRM1mA0.1 (VRM=VRRM, Ta=25℃)
Thermal Resistance Between junction and caseRθJ-C℃/W5.0

Key Features

  • High frequency operation
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
  • Guard ring for enhanced ruggedness and long term reliability
  • Tin plated leads, solderable per J-STD-002 and JESD22-B102
  • RoHS-compliant and meets UL 94 V-0 flammability ratings

Applications

The MBR10100CD-F1-0000HF Schottky diode is typically used in various applications such as:

  • Switching power supplies
  • Converters
  • Freewheeling diodes
  • Reverse battery protection

Q & A

  1. What is the repetitive peak reverse voltage of the MBR10100CD-F1-0000HF? The repetitive peak reverse voltage (VRRM) is 100V.
  2. What is the average rectified output current of the MBR10100CD-F1-0000HF at 60Hz sine wave? The average rectified output current (IO) is 10A.
  3. What is the surge forward current capability of the MBR10100CD-F1-0000HF? The surge (non-repetitive) forward current (IFSM) is 120A at 60Hz half sine-wave for 1 cycle.
  4. What is the storage temperature range for the MBR10100CD-F1-0000HF? The storage temperature range is -55°C to +175°C.
  5. What is the junction temperature range for the MBR10100CD-F1-0000HF? The junction temperature range is -55°C to +175°C.
  6. What is the maximum instantaneous forward voltage drop per diode for the MBR10100CD-F1-0000HF? The maximum instantaneous forward voltage drop per diode (VFM) is 0.8V at IFM=5.0A.
  7. What is the thermal resistance between the junction and case for the MBR10100CD-F1-0000HF? The thermal resistance between the junction and case (RθJ-C) is 5.0°C/W.
  8. Is the MBR10100CD-F1-0000HF RoHS-compliant? Yes, the MBR10100CD-F1-0000HF is RoHS-compliant.
  9. What package type is used for the MBR10100CD-F1-0000HF? The MBR10100CD-F1-0000HF is packaged in a TO-252 case.
  10. What are the typical applications of the MBR10100CD-F1-0000HF? Typical applications include switching power supplies, converters, freewheeling diodes, and reverse battery protection.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:800 mV @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Operating Temperature - Junction:-55°C ~ 175°C
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-252
0 Remaining View Similar

In Stock

$0.65
30

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MBR10100CD-F1-0000HF MBR10200CD-F1-0000HF MBR10150CD-F1-0000HF
Manufacturer Yangzhou Yangjie Electronic Technology Co.,Ltd Yangzhou Yangjie Electronic Technology Co.,Ltd Yangzhou Yangjie Electronic Technology Co.,Ltd
Product Status Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 200 V 150 V
Current - Average Rectified (Io) (per Diode) 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 800 mV @ 5 A 900 mV @ 5 A 850 mV @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 100 µA @ 100 V 100 µA @ 200 V 100 µA @ 150 V
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252 TO-252 TO-252

Related Product By Categories

BAS4005E6433HTMA1
BAS4005E6433HTMA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BYV44-500,127
BYV44-500,127
WeEn Semiconductors
DIODE ARRAY GP 500V 30A TO220AB
BAV170_R1_00001
BAV170_R1_00001
Panjit International Inc.
SOT-23, SWITCHING
BAS40-05
BAS40-05
Diotec Semiconductor
SCHOTTKY SOT-23 40V 0.2A
BAV70W
BAV70W
Diotec Semiconductor
DIODE SOT-323 75V 0.17A 4NS
STPS40150CG-TR
STPS40150CG-TR
STMicroelectronics
DIODE ARRAY SCHOTTKY 150V D2PAK
BAV74_D87Z
BAV74_D87Z
onsemi
DIODE ARRAY GP 50V 200MA SOT23-3
BAV99_S00Z
BAV99_S00Z
onsemi
DIODE HI COND 70V 200MA SOT-23
BAW56SB6327XT
BAW56SB6327XT
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAW56TT1
BAW56TT1
onsemi
DIODE ARRAY GP 70V 200MA SC75
BAV 99W H6433
BAV 99W H6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAV99W/DG/B4X
BAV99W/DG/B4X
Nexperia USA Inc.
DIODE SWITCHING TO-236AB

Related Product By Brand

SMBJ5.0CA-F1-0000HF
SMBJ5.0CA-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TVS DIODE 5VWM 9.2VC DO214AA
BAT54AWT-F2-0000HF
BAT54AWT-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 30V 0.2A SOT-323
BAS40-06-F2-0000HF
BAS40-06-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 40V 0.2A SOT-23-3
BAS70-04-F2-0000HF
BAS70-04-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 70V 0.07A SOT-23-
BAS516-F2-0000HF
BAS516-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 100V 250MA SOD523
BAS21-F2-0000HF
BAS21-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 250V 200MA SOT23
MUR420-D1-0000
MUR420-D1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 4A DO201AD
BC857BS-F2-0000HF
BC857BS-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
PNP+PNP TRANS 45V 0.2A SOT-363
BC847BW-F2-0000HF
BC847BW-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS NPN 45V 0.1A SOT323
BC807-40-F2-0000HF
BC807-40-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS PNP 45V 0.5A SOT23
2N7002W-F2-0000HF
2N7002W-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 0.34A SOT-323
2N7002KW-F2-0000HF
2N7002KW-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 0.34A SOT-323