Overview
The BSS123-F2-0000HF is an N-Channel enhancement mode field effect transistor produced by Yangzhou Yangjie Electronic Technology Co., Ltd. This device is designed using high cell density DMOS technology, which minimizes on-state resistance and provides rugged, reliable, and fast switching performance.
It is particularly suited for low voltage, low current applications, making it a versatile component in various electronic systems.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 100 | V | ||
| Gate-Source Voltage | VGSS | ±20 | V | ||
| Continuous Drain Current | ID | 0.17 | A | ||
| Pulsed Drain Current | ID | 0.68 | A | ||
| Gate Threshold Voltage | VGS(th) | 1.0 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | 3.0 | 5.0 | Ω @ VGS = 10 V, ID = 200 mA | |
| Static Drain-Source On-Resistance | RDS(ON) | 3.5 | 5.5 | Ω @ VGS = 4.5 V, ID = 175 mA | |
| Input Capacitance | Ciss | 32 | pF @ VDS = 50 V, VGS = 0 V, f = 1 MHz | ||
| Output Capacitance | Coss | 10 | pF | ||
| Reverse Transfer Capacitance | Crss | 7 | pF | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 357 | °C/W | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | +150 | °C |
Key Features
- High Density Cell Design: Ensures extremely low RDS(ON) for efficient switching performance.
- Rugged and Reliable: Designed to provide robust operation in various applications.
- Compact Industry Standard SOT-23 Surface Mount Package: Easy to integrate into compact designs.
- Pb-Free and Halogen-Free: Compliant with environmental regulations.
- Fast Switching Performance: Suitable for applications requiring quick on and off times.
Applications
- Small Servo Motor Control: Ideal for controlling small servo motors due to its low voltage and current handling capabilities.
- Power MOSFET Gate Drivers: Used in driving gates of power MOSFETs efficiently.
- Switching Applications: Suitable for various switching applications requiring low on-state resistance and fast switching times.
Q & A
- What is the maximum drain-source voltage of the BSS123-F2-0000HF?
The maximum drain-source voltage (VDSS) is 100 V.
- What is the typical gate threshold voltage of the BSS123-F2-0000HF?
The typical gate threshold voltage (VGS(th)) is 1.8 V.
- What is the maximum continuous drain current of the BSS123-F2-0000HF?
The maximum continuous drain current (ID) is 0.17 A.
- What is the thermal resistance, junction-to-ambient, of the BSS123-F2-0000HF?
The thermal resistance, junction-to-ambient (RθJA), is 357 °C/W.
- Is the BSS123-F2-0000HF Pb-Free and Halogen-Free?
Yes, the BSS123-F2-0000HF is Pb-Free and Halogen-Free.
- What is the typical input capacitance of the BSS123-F2-0000HF?
The typical input capacitance (Ciss) is 32 pF at VDS = 50 V, VGS = 0 V, and f = 1 MHz.
- What are some common applications of the BSS123-F2-0000HF?
Common applications include small servo motor control, power MOSFET gate drivers, and other switching applications.
- What is the package type of the BSS123-F2-0000HF?
The package type is SOT-23, a compact industry standard surface mount package.
- What is the operating and storage junction temperature range of the BSS123-F2-0000HF?
The operating and storage junction temperature range (TJ, TSTG) is -55°C to +150°C.
- What is the turn-on delay time of the BSS123-F2-0000HF?
The turn-on delay time (tD(on)) is typically 1.7 ns.
