Overview
The 2N7002-F2-0000HF is an N-Channel Enhancement Mode Field Effect Transistor (MOSFET) produced by Yangzhou Yangjie Electronic Technology Co., Ltd. This MOSFET is designed using Trench Power MV MOSFET technology, making it suitable for various applications requiring low on-state resistance and fast switching speeds.
It is particularly useful in voltage-controlled small signal switching applications and is known for its low input capacitance, fast switching speed, and low input/output leakage. The device is packaged in a SOT-23-3L package, which is a small surface mount type, making it ideal for space-constrained designs.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V |
| Continuous Drain Current at 25°C | ID | 340 | mA |
| Drain-Source On-Resistance at VGS=10V | RDS(ON) | ＜2.5 | Ω |
| Drain-Source On-Resistance at VGS=4.5V | RDS(ON) | ＜3.0 | Ω |
| Gate-Source Voltage Threshold | VGS(th) | 1 - 2.5 | V |
| Input Capacitance at VDS=30V, VGS=0V | Ciss | 27.5 | pF |
| Total Power Dissipation at TA=25°C | PD | 350 | mW |
| Thermal Resistance Junction-to-Ambient | RθJA | 357 | ℃/W |
| Junction and Storage Temperature Range | TJ, TSTG | -55 to +150 | ℃ |
Key Features
- Trench Power MV MOSFET Technology: Enhances performance with low on-state resistance and fast switching speeds.
- Low Input Capacitance: Reduces the impact on high-frequency circuits.
- Fast Switching Speed: Ideal for applications requiring quick switching times.
- Low Input/Output Leakage: Minimizes power loss and improves overall efficiency.
- Small Surface Mount Package (SOT-23-3L): Suitable for space-constrained designs.
- Totally Lead-Free & Fully RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
Applications
- Battery Operated Systems: Ideal for portable and battery-powered devices.
- Solid-State Relays: Used in applications requiring reliable and efficient switching.
- Direct Logic-Level Interface (TTL/CMOS): Compatible with various logic levels, making it versatile for different digital circuits.
- Motor Control: Suitable for motor control applications due to its low on-state resistance and fast switching.
- Power Management Functions: Used in power management circuits to enhance efficiency and reduce power loss.
Q & A
- What is the maximum drain-source voltage (VDS) of the 2N7002-F2-0000HF MOSFET?
The maximum drain-source voltage (VDS) is 60V.
- What is the continuous drain current (ID) at 25°C for this MOSFET?
The continuous drain current (ID) at 25°C is 340mA.
- What is the typical on-state resistance (RDS(ON)) at VGS=10V?
The typical on-state resistance (RDS(ON)) at VGS=10V is less than 2.5Ω.
- What is the gate-source voltage threshold (VGS(th)) range?
The gate-source voltage threshold (VGS(th)) range is from 1V to 2.5V.
- What is the input capacitance (Ciss) at VDS=30V and VGS=0V?
The input capacitance (Ciss) at VDS=30V and VGS=0V is 27.5pF.
- What is the maximum total power dissipation (PD) at TA=25°C?
The maximum total power dissipation (PD) at TA=25°C is 350mW.
- What is the thermal resistance junction-to-ambient (RθJA)?
The thermal resistance junction-to-ambient (RθJA) is 357℃/W.
- What is the junction and storage temperature range for this MOSFET?
The junction and storage temperature range is from -55°C to +150°C.
- Is the 2N7002-F2-0000HF MOSFET RoHS compliant?
Yes, the 2N7002-F2-0000HF MOSFET is fully RoHS compliant.
- What are some common applications of the 2N7002-F2-0000HF MOSFET?
Common applications include battery operated systems, solid-state relays, direct logic-level interface (TTL/CMOS), motor control, and power management functions.
