MMBT2222A-F2-0000HF
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Yangzhou Yangjie Electronic Technology Co.,Ltd MMBT2222A-F2-0000HF

Manufacturer No:
MMBT2222A-F2-0000HF
Manufacturer:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222A-F2-0000HF is an NPN bipolar junction transistor (BJT) produced by Yangzhou Yangjie Electronic Technology Co., Ltd. This transistor is housed in a small SOT-23 package, making it suitable for a variety of applications where space is limited. It is designed for general-purpose amplification and switching, offering a balance of low voltage and high current capabilities.

Key Specifications

Parameter Symbol Min Max Unit Test Conditions
Collector-Base Voltage VCBO - 75 V IE = 0
Collector-Emitter Voltage VCEO - 40 V IB = 0
Emitter-Base Voltage VEBO - 6.0 V IC = 0
Collector Current (DC) IC - 600 mA -
Peak Collector Current ICM - 800 mA -
Peak Base Current IBM - 200 mA -
Total Power Dissipation Ptot - 250 mW Tamb ≤ 25 °C
Storage Temperature Range Tstg -65 +150 °C -
Junction Temperature Tj - +150 °C -
DC Current Gain (hFE) hFE 100 300 - VCE = 10 V, IC = 150 mA
Transition Frequency fT - 300 MHz VCE = 20 V, IC = 20 mA, f = 100 MHz

Key Features

  • Low Voltage Capability: Maximum collector-emitter voltage of 40 V and maximum emitter-base voltage of 6 V.
  • High Current Capability: Continuous collector current of up to 600 mA and peak collector current of up to 800 mA.
  • Small Package: SOT-23 surface mount package, ideal for space-constrained applications.
  • Low Saturation Voltage: Collector-emitter saturation voltage (VCE(sat)) less than 300 mV at 150 mA.
  • Complementary PNP Transistor: The MMBT2222A has a complementary PNP transistor, the MMBT2907A.
  • Environmental Compliance: Totally lead-free, RoHS compliant, and halogen- and antimony-free, making it a 'green' device.

Applications

  • General Purpose Amplification: Suitable for low power amplification in various electronic circuits.
  • Switching Applications: Used in switching circuits due to its fast switching times and low saturation voltage.
  • Automotive Applications: The MMBT2222AQ-7-F variant is AEC-Q101 qualified, making it suitable for automotive use.

Q & A

  1. What is the maximum collector-emitter voltage of the MMBT2222A?

    The maximum collector-emitter voltage (VCEO) is 40 V.

  2. What is the continuous collector current rating of the MMBT2222A?

    The continuous collector current (IC) is up to 600 mA.

  3. What is the package type of the MMBT2222A?

    The MMBT2222A is housed in a SOT-23 surface mount package.

  4. What is the transition frequency of the MMBT2222A?

    The transition frequency (fT) is up to 300 MHz at VCE = 20 V, IC = 20 mA, and f = 100 MHz.

  5. Is the MMBT2222A environmentally compliant?

    Yes, it is totally lead-free, RoHS compliant, and halogen- and antimony-free).

  6. What is the complementary PNP transistor for the MMBT2222A?

    The complementary PNP transistor is the MMBT2907A).

  7. What are the typical applications of the MMBT2222A?

    It is used in general-purpose amplification and switching applications).

  8. Does the MMBT2222A have any automotive-specific variants?

    Yes, the MMBT2222AQ-7-F variant is AEC-Q101 qualified for automotive applications).

  9. What is the storage temperature range for the MMBT2222A?

    The storage temperature range is from -65°C to +150°C).

  10. What is the junction temperature limit for the MMBT2222A?

    The junction temperature limit is up to +150°C).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 15mA, 150mA
Current - Collector Cutoff (Max):10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 1V
Power - Max:300 mW
Frequency - Transition:300MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
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