Overview
The MMBT2222A-F2-0000HF is an NPN bipolar junction transistor (BJT) produced by Yangzhou Yangjie Electronic Technology Co., Ltd. This transistor is housed in a small SOT-23 package, making it suitable for a variety of applications where space is limited. It is designed for general-purpose amplification and switching, offering a balance of low voltage and high current capabilities.
Key Specifications
Parameter | Symbol | Min | Max | Unit | Test Conditions |
---|---|---|---|---|---|
Collector-Base Voltage | VCBO | - | 75 | V | IE = 0 |
Collector-Emitter Voltage | VCEO | - | 40 | V | IB = 0 |
Emitter-Base Voltage | VEBO | - | 6.0 | V | IC = 0 |
Collector Current (DC) | IC | - | 600 | mA | - |
Peak Collector Current | ICM | - | 800 | mA | - |
Peak Base Current | IBM | - | 200 | mA | - |
Total Power Dissipation | Ptot | - | 250 | mW | Tamb ≤ 25 °C |
Storage Temperature Range | Tstg | -65 | +150 | °C | - |
Junction Temperature | Tj | - | +150 | °C | - |
DC Current Gain (hFE) | hFE | 100 | 300 | - | VCE = 10 V, IC = 150 mA |
Transition Frequency | fT | - | 300 | MHz | VCE = 20 V, IC = 20 mA, f = 100 MHz |
Key Features
- Low Voltage Capability: Maximum collector-emitter voltage of 40 V and maximum emitter-base voltage of 6 V.
- High Current Capability: Continuous collector current of up to 600 mA and peak collector current of up to 800 mA.
- Small Package: SOT-23 surface mount package, ideal for space-constrained applications.
- Low Saturation Voltage: Collector-emitter saturation voltage (VCE(sat)) less than 300 mV at 150 mA.
- Complementary PNP Transistor: The MMBT2222A has a complementary PNP transistor, the MMBT2907A.
- Environmental Compliance: Totally lead-free, RoHS compliant, and halogen- and antimony-free, making it a 'green' device.
Applications
- General Purpose Amplification: Suitable for low power amplification in various electronic circuits.
- Switching Applications: Used in switching circuits due to its fast switching times and low saturation voltage.
- Automotive Applications: The MMBT2222AQ-7-F variant is AEC-Q101 qualified, making it suitable for automotive use.
Q & A
- What is the maximum collector-emitter voltage of the MMBT2222A?
The maximum collector-emitter voltage (VCEO) is 40 V.
- What is the continuous collector current rating of the MMBT2222A?
The continuous collector current (IC) is up to 600 mA.
- What is the package type of the MMBT2222A?
The MMBT2222A is housed in a SOT-23 surface mount package.
- What is the transition frequency of the MMBT2222A?
The transition frequency (fT) is up to 300 MHz at VCE = 20 V, IC = 20 mA, and f = 100 MHz.
- Is the MMBT2222A environmentally compliant?
Yes, it is totally lead-free, RoHS compliant, and halogen- and antimony-free).
- What is the complementary PNP transistor for the MMBT2222A?
The complementary PNP transistor is the MMBT2907A).
- What are the typical applications of the MMBT2222A?
It is used in general-purpose amplification and switching applications).
- Does the MMBT2222A have any automotive-specific variants?
Yes, the MMBT2222AQ-7-F variant is AEC-Q101 qualified for automotive applications).
- What is the storage temperature range for the MMBT2222A?
The storage temperature range is from -65°C to +150°C).
- What is the junction temperature limit for the MMBT2222A?
The junction temperature limit is up to +150°C).