2N7002A-F2-0000HF
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Yangzhou Yangjie Electronic Technology Co.,Ltd 2N7002A-F2-0000HF

Manufacturer No:
2N7002A-F2-0000HF
Manufacturer:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Package:
Tape & Reel (TR)
Description:
N-CH MOSFET 60V 0.34A SOT-23-3L
Delivery:
Payment:
iso14001
iso45001
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iso13485

Product Introduction

Overview

The 2N7002A-F2-0000HF is an N-Channel Enhancement Mode MOSFET produced by Yangzhou Yangjie Electronic Technology Co., Ltd. This MOSFET is designed to offer low on-state resistance and superior switching performance, making it ideal for high-efficiency power management applications.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Voltage VDSS 60 V VGS = 0V
Gate-Source Voltage VGSS ±20 V Continuous
Continuous Drain Current ID 220 mA VGS = 10V, TA = +25°C
Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 800 mA
On-State Resistance RDS(ON) 6 Ω VGS = 5V
Total Power Dissipation PD 370 mW TA = +25°C
Thermal Resistance, Junction to Ambient RθJA 348 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Key Features

  • Low On-Resistance: Minimized on-state resistance for high efficiency.
  • Low Gate Threshold Voltage: Ensures easy switching.
  • Low Input Capacitance: Reduces switching losses.
  • Fast Switching Speed: Ideal for high-frequency applications.
  • Small Surface Mount Package: SOT23 package for compact designs.
  • ESD Protected Gate: 1.2kV HBM, 1kV CDM protection.
  • Totally Lead-Free & Fully RoHS Compliant: Environmentally friendly.
  • Halogen and Antimony Free: Compliant with green device standards.

Applications

  • Motor Control: Suitable for motor drive applications due to its high efficiency and fast switching.
  • Power Management Functions: Ideal for power management in various electronic devices.
  • Automotive Electronics: Can be used in automotive systems requiring specific change control.
  • Consumer Electronics: Used in consumer electronic equipment and white goods.
  • Industrial Controllers: Suitable for industrial control systems and power supplies.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002A-F2-0000HF MOSFET?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) is 220mA at VGS = 10V and TA = +25°C.

  3. What is the on-state resistance of the MOSFET?

    The on-state resistance (RDS(ON)) is 6Ω at VGS = 5V.

  4. Is the 2N7002A-F2-0000HF MOSFET RoHS compliant?

    Yes, it is totally lead-free and fully RoHS compliant.

  5. What is the thermal resistance from junction to ambient?

    The thermal resistance from junction to ambient (RθJA) is 348°C/W.

  6. What are the typical applications of this MOSFET?

    It is typically used in motor control, power management functions, automotive electronics, consumer electronics, and industrial controllers.

  7. What is the maximum gate-source voltage?

    The maximum gate-source voltage (VGSS) is ±20V.

  8. Does the MOSFET have ESD protection?

    Yes, it has ESD protection with 1.2kV HBM and 1kV CDM.

  9. What is the operating temperature range?

    The operating and storage temperature range is -55°C to +150°C.

  10. What package type is used for this MOSFET?

    The MOSFET is packaged in a SOT23 surface mount package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:27.5 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002A-F2-0000HF 2N7002W-F2-0000HF 2N7002-F2-0000HF
Manufacturer Yangzhou Yangjie Electronic Technology Co.,Ltd Yangzhou Yangjie Electronic Technology Co.,Ltd Yangzhou Yangjie Electronic Technology Co.,Ltd
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 340mA (Ta) 340mA (Ta) 340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 300mA, 10V 2.5Ohm @ 300mA, 10V 2.5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.6 nC @ 10 V 1.6 nC @ 10 V 1.6 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 27.5 pF @ 30 V 27.5 pF @ 30 V 27.5 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 350mW (Ta) 150mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23 SOT-323 SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

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