BC847A-F2-0000HF
  • Share:

Yangzhou Yangjie Electronic Technology Co.,Ltd BC847A-F2-0000HF

Manufacturer No:
BC847A-F2-0000HF
Manufacturer:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847A is a general-purpose NPN silicon bipolar transistor produced by Yangzhou Yangjie Electronic Technology Co., Ltd. This transistor is part of the BC847 series, known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics. It is packaged in a SOT-23 surface mount package, making it ideal for automated placement and use in various electronic circuits.

Key Specifications

ParameterSymbolUnitConditionsValue
Collector-base voltageVCBOVIC = 10 µA, IE = 050
Collector-emitter voltageVCEOVIC = 10 mA, IB = 045
Emitter-base voltageVEBOVIE = 10 µA, IC = 06
Collector currentICA0.1
Power dissipationPDmW200
Junction temperatureTJ°C-55 to +150
Storage temperatureTSTG°C-55 to +150
DC current gainhFEVCE = 5 V, IC = 2 mA110 - 220 (A), 200 - 450 (B), 420 - 800 (C)
Collector-emitter saturation voltageVCE(sat)VIC = 100 mA, IB = 5 mA0.5
Base-emitter saturation voltageVBE(sat)VIC = 100 mA, IB = 5 mA1.1

Key Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Low noise between 30 Hz and 15 kHz
  • Complementary types available (BC857-BC860 for PNP)
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q101 (except BC847BL3)
  • Moisture sensitivity level 1 and halogen-free
  • Ideal for automated placement due to surface mount package

Applications

  • Audio frequency (AF) input stages and driver applications
  • Signal amplification
  • Switching circuits

Q & A

  1. What is the maximum collector-base voltage of the BC847A transistor?
    The maximum collector-base voltage (VCBO) of the BC847A transistor is 50 V.
  2. What is the maximum collector-emitter voltage of the BC847A transistor?
    The maximum collector-emitter voltage (VCEO) of the BC847A transistor is 45 V.
  3. What is the maximum emitter-base voltage of the BC847A transistor?
    The maximum emitter-base voltage (VEBO) of the BC847A transistor is 6 V.
  4. What is the maximum collector current of the BC847A transistor?
    The maximum collector current (IC) of the BC847A transistor is 0.1 A.
  5. What is the power dissipation of the BC847A transistor?
    The power dissipation (PD) of the BC847A transistor is 200 mW.
  6. What are the junction and storage temperature ranges for the BC847A transistor?
    The junction temperature (TJ) and storage temperature (TSTG) ranges for the BC847A transistor are -55 to +150 °C.
  7. What are the typical DC current gain values for the BC847A transistor?
    The DC current gain (hFE) values for the BC847A transistor range from 110 to 220 for type A, 200 to 450 for type B, and 420 to 800 for type C.
  8. What is the collector-emitter saturation voltage of the BC847A transistor?
    The collector-emitter saturation voltage (VCE(sat)) of the BC847A transistor is approximately 0.5 V.
  9. What is the base-emitter saturation voltage of the BC847A transistor?
    The base-emitter saturation voltage (VBE(sat)) of the BC847A transistor is approximately 1.1 V.
  10. What are some common applications of the BC847A transistor?
    The BC847A transistor is commonly used in audio frequency input stages, driver applications, signal amplification, and switching circuits.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 100mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.21
3,082

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT0/AA
CBC13W3S10HT0/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HT20/AA
DD26M20HT20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC847A-F2-0000HF BC847B-F2-0000HF
Manufacturer Yangzhou Yangjie Electronic Technology Co.,Ltd Yangzhou Yangjie Electronic Technology Co.,Ltd
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 200 mW 200 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 SOT-23

Related Product By Categories

PMBTA45,215
PMBTA45,215
Nexperia USA Inc.
TRANS NPN 500V 0.15A TO236AB
2N5191G
2N5191G
onsemi
TRANS NPN 60V 4A TO126
BDX53C
BDX53C
STMicroelectronics
TRANS NPN DARL 100V 8A TO220
BC857AT,115
BC857AT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
PN2222AG
PN2222AG
onsemi
TRANS NPN 40V 0.6A TO92
BC 817-16 E6327
BC 817-16 E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3
MMBT2222A_D87Z
MMBT2222A_D87Z
onsemi
TRANS NPN 40V 1A SOT23-3
PBSS5350Z/ZLF
PBSS5350Z/ZLF
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
2N6107-AP
2N6107-AP
Micro Commercial Co
TRANS PNP 70V 7A TO220AB
PHD13005AD,127
PHD13005AD,127
NXP USA Inc.
TRANS NPN 700V 4A DPAK

Related Product By Brand

BAT54A-F2-0000HF
BAT54A-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 30V 0.2A SOT-23-3
MBR0540-F2-0000HF
MBR0540-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOD123
BAS16WS-F2-0000HF
BAS16WS-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOD323
BAS40-F2-0000HF
BAS40-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 200MA SOT23
MUR260-D1-0000
MUR260-D1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 2A DO204AC
MUR3060P-B1-0000HF
MUR3060P-B1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 30A TO247AC
BZX84C15-F2-0000HF
BZX84C15-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
ZENER DIODE 15V 0.35W SOT-23-3L
BZX84C5V6-F2-0000HF
BZX84C5V6-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
ZENER DIODE 5.6V 0.35W SOT-23-3L
MMBT3904-F2-0001HF
MMBT3904-F2-0001HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS NPN 40V 0.2A SOT23
BC847BW-F2-0000HF
BC847BW-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS NPN 45V 0.1A SOT323
S8050-H-F2-0001HF
S8050-H-F2-0001HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS NPN 25V 0.5A TO92
2N7002KDW-F2-0000HF
2N7002KDW-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 0.34A SOT-363