BC847A-F2-0000HF
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Yangzhou Yangjie Electronic Technology Co.,Ltd BC847A-F2-0000HF

Manufacturer No:
BC847A-F2-0000HF
Manufacturer:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847A is a general-purpose NPN silicon bipolar transistor produced by Yangzhou Yangjie Electronic Technology Co., Ltd. This transistor is part of the BC847 series, known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics. It is packaged in a SOT-23 surface mount package, making it ideal for automated placement and use in various electronic circuits.

Key Specifications

ParameterSymbolUnitConditionsValue
Collector-base voltageVCBOVIC = 10 µA, IE = 050
Collector-emitter voltageVCEOVIC = 10 mA, IB = 045
Emitter-base voltageVEBOVIE = 10 µA, IC = 06
Collector currentICA0.1
Power dissipationPDmW200
Junction temperatureTJ°C-55 to +150
Storage temperatureTSTG°C-55 to +150
DC current gainhFEVCE = 5 V, IC = 2 mA110 - 220 (A), 200 - 450 (B), 420 - 800 (C)
Collector-emitter saturation voltageVCE(sat)VIC = 100 mA, IB = 5 mA0.5
Base-emitter saturation voltageVBE(sat)VIC = 100 mA, IB = 5 mA1.1

Key Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Low noise between 30 Hz and 15 kHz
  • Complementary types available (BC857-BC860 for PNP)
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q101 (except BC847BL3)
  • Moisture sensitivity level 1 and halogen-free
  • Ideal for automated placement due to surface mount package

Applications

  • Audio frequency (AF) input stages and driver applications
  • Signal amplification
  • Switching circuits

Q & A

  1. What is the maximum collector-base voltage of the BC847A transistor?
    The maximum collector-base voltage (VCBO) of the BC847A transistor is 50 V.
  2. What is the maximum collector-emitter voltage of the BC847A transistor?
    The maximum collector-emitter voltage (VCEO) of the BC847A transistor is 45 V.
  3. What is the maximum emitter-base voltage of the BC847A transistor?
    The maximum emitter-base voltage (VEBO) of the BC847A transistor is 6 V.
  4. What is the maximum collector current of the BC847A transistor?
    The maximum collector current (IC) of the BC847A transistor is 0.1 A.
  5. What is the power dissipation of the BC847A transistor?
    The power dissipation (PD) of the BC847A transistor is 200 mW.
  6. What are the junction and storage temperature ranges for the BC847A transistor?
    The junction temperature (TJ) and storage temperature (TSTG) ranges for the BC847A transistor are -55 to +150 °C.
  7. What are the typical DC current gain values for the BC847A transistor?
    The DC current gain (hFE) values for the BC847A transistor range from 110 to 220 for type A, 200 to 450 for type B, and 420 to 800 for type C.
  8. What is the collector-emitter saturation voltage of the BC847A transistor?
    The collector-emitter saturation voltage (VCE(sat)) of the BC847A transistor is approximately 0.5 V.
  9. What is the base-emitter saturation voltage of the BC847A transistor?
    The base-emitter saturation voltage (VBE(sat)) of the BC847A transistor is approximately 1.1 V.
  10. What are some common applications of the BC847A transistor?
    The BC847A transistor is commonly used in audio frequency input stages, driver applications, signal amplification, and switching circuits.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 100mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
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Similar Products

Part Number BC847A-F2-0000HF BC847B-F2-0000HF
Manufacturer Yangzhou Yangjie Electronic Technology Co.,Ltd Yangzhou Yangjie Electronic Technology Co.,Ltd
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 200 mW 200 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 SOT-23

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