BC847A-F2-0000HF
  • Share:

Yangzhou Yangjie Electronic Technology Co.,Ltd BC847A-F2-0000HF

Manufacturer No:
BC847A-F2-0000HF
Manufacturer:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847A is a general-purpose NPN silicon bipolar transistor produced by Yangzhou Yangjie Electronic Technology Co., Ltd. This transistor is part of the BC847 series, known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics. It is packaged in a SOT-23 surface mount package, making it ideal for automated placement and use in various electronic circuits.

Key Specifications

ParameterSymbolUnitConditionsValue
Collector-base voltageVCBOVIC = 10 µA, IE = 050
Collector-emitter voltageVCEOVIC = 10 mA, IB = 045
Emitter-base voltageVEBOVIE = 10 µA, IC = 06
Collector currentICA0.1
Power dissipationPDmW200
Junction temperatureTJ°C-55 to +150
Storage temperatureTSTG°C-55 to +150
DC current gainhFEVCE = 5 V, IC = 2 mA110 - 220 (A), 200 - 450 (B), 420 - 800 (C)
Collector-emitter saturation voltageVCE(sat)VIC = 100 mA, IB = 5 mA0.5
Base-emitter saturation voltageVBE(sat)VIC = 100 mA, IB = 5 mA1.1

Key Features

  • High current gain
  • Low collector-emitter saturation voltage
  • Low noise between 30 Hz and 15 kHz
  • Complementary types available (BC857-BC860 for PNP)
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q101 (except BC847BL3)
  • Moisture sensitivity level 1 and halogen-free
  • Ideal for automated placement due to surface mount package

Applications

  • Audio frequency (AF) input stages and driver applications
  • Signal amplification
  • Switching circuits

Q & A

  1. What is the maximum collector-base voltage of the BC847A transistor?
    The maximum collector-base voltage (VCBO) of the BC847A transistor is 50 V.
  2. What is the maximum collector-emitter voltage of the BC847A transistor?
    The maximum collector-emitter voltage (VCEO) of the BC847A transistor is 45 V.
  3. What is the maximum emitter-base voltage of the BC847A transistor?
    The maximum emitter-base voltage (VEBO) of the BC847A transistor is 6 V.
  4. What is the maximum collector current of the BC847A transistor?
    The maximum collector current (IC) of the BC847A transistor is 0.1 A.
  5. What is the power dissipation of the BC847A transistor?
    The power dissipation (PD) of the BC847A transistor is 200 mW.
  6. What are the junction and storage temperature ranges for the BC847A transistor?
    The junction temperature (TJ) and storage temperature (TSTG) ranges for the BC847A transistor are -55 to +150 °C.
  7. What are the typical DC current gain values for the BC847A transistor?
    The DC current gain (hFE) values for the BC847A transistor range from 110 to 220 for type A, 200 to 450 for type B, and 420 to 800 for type C.
  8. What is the collector-emitter saturation voltage of the BC847A transistor?
    The collector-emitter saturation voltage (VCE(sat)) of the BC847A transistor is approximately 0.5 V.
  9. What is the base-emitter saturation voltage of the BC847A transistor?
    The base-emitter saturation voltage (VBE(sat)) of the BC847A transistor is approximately 1.1 V.
  10. What are some common applications of the BC847A transistor?
    The BC847A transistor is commonly used in audio frequency input stages, driver applications, signal amplification, and switching circuits.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 100mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.21
3,082

Please send RFQ , we will respond immediately.

Same Series
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP

Similar Products

Part Number BC847A-F2-0000HF BC847B-F2-0000HF
Manufacturer Yangzhou Yangjie Electronic Technology Co.,Ltd Yangzhou Yangjie Electronic Technology Co.,Ltd
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 200 mW 200 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 SOT-23

Related Product By Categories

PMBT5550,235
PMBT5550,235
Nexperia USA Inc.
TRANS NPN 140V 0.3A TO236AB
BC847BW
BC847BW
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
BC857B-AU_R1_000A1
BC857B-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
BC807-40W-AU_R1_000A1
BC807-40W-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.5A SOT323
NSS20101JT1G
NSS20101JT1G
onsemi
TRANS NPN 20V 1A SC89-3
BCP56TA
BCP56TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
MPS751-D26Z
MPS751-D26Z
onsemi
TRANS PNP 60V 2A TO92-3
2N2907AE4
2N2907AE4
Microchip Technology
TRANS PNP 60V 0.6A TO18
BC857BT,115
BC857BT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
BCX56-10R1
BCX56-10R1
onsemi
TRANS NPN 80V 1A SOT89-3
BC857BW/SNX
BC857BW/SNX
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70

Related Product By Brand

BAV99-F2-0000HF
BAV99-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
GEN PURP DIODE 75V 0.2A SOT-23-
BAS40-04-F2-0000HF
BAS40-04-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 40V 0.2A SOT-23-3
BAV21WS-F2-0000HF
BAV21WS-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 250V 200MA SOD323
MUR460-D1-0000
MUR460-D1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 4A DO201AD
BAT54W-F2-0000HF
BAT54W-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 30V 200MA SOD123
BAV21W-F2-0000HF
BAV21W-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 250V 200MA SOD123
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
BZX84B6V2-F2-0000HF
BZX84B6V2-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
ZENER DIODE 6.2V 0.35W SOT-23-3L
BC857BS-F2-0000HF
BC857BS-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
PNP+PNP TRANS 45V 0.2A SOT-363
S8050-H-F2-0001HF
S8050-H-F2-0001HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS NPN 25V 0.5A TO92
BC817-40W-F2-0000HF
BC817-40W-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS NPN 45V 0.5A SOT323
BSS84-F2-0000HF
BSS84-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
P-CH MOSFET 60V 0.17A SOT-23-3L