Overview
The BC857C is a PNP general-purpose bipolar transistor manufactured by Nexperia, although the specific part number BC857C-F2-0000HF is associated with Yangzhou Yangjie Electronic Technology Co., Ltd. This transistor is part of the BC857 series and is known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics.
It is packaged in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for a variety of applications where space is limited.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCEO (Collector-Emitter Breakdown Voltage) | IC = -2 mA; IB = 0 A | - | - | -45 | V |
| VEB0 (Emitter-Base Breakdown Voltage) | IC = 0 A; IE = -100 µA | - | - | -5 | V |
| IC (Collector Current) | - | - | - | -100 | mA |
| ICM (Peak Collector Current) | - | - | - | -200 | mA |
| hFE (DC Current Gain) | VCE = 5 V; IC = 2 mA | 420 | - | 800 | - |
| VCEsat (Collector-Emitter Saturation Voltage) | IC = -10 mA; IB = -0.5 mA | -75 | - | -300 | mV |
| TJ (Junction Temperature) | - | - | - | 150 | °C |
| Ptot (Total Power Dissipation) | Tamb ≤ 25 °C | - | - | 250 | mW |
Key Features
- High current gain (hFE) ranging from 420 to 800.
- Low collector-emitter saturation voltage (VCEsat), typically around 75-300 mV.
- Low noise characteristics between 30 Hz and 15 kHz.
- Pb-free (RoHS compliant) package.
- Qualified according to AEC Q101.
- Complementary types available (BC847...-BC850... for NPN).
Applications
The BC857C transistor is suitable for various applications, including:
- AF input stages and driver applications.
- General-purpose switching and amplification.
- Automotive, industrial, power, computing, consumer, mobile, and wearable applications due to its robust and versatile characteristics.
Q & A
- What is the collector-emitter breakdown voltage of the BC857C transistor?
The collector-emitter breakdown voltage (VCEO) of the BC857C transistor is -45 V.
- What is the maximum collector current of the BC857C transistor?
The maximum collector current (IC) of the BC857C transistor is -100 mA).
- What is the typical DC current gain (hFE) of the BC857C transistor?
The typical DC current gain (hFE) of the BC857C transistor ranges from 420 to 800).
- What is the package type of the BC857C transistor?
The BC857C transistor is packaged in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package).
- Is the BC857C transistor RoHS compliant?
Yes, the BC857C transistor is Pb-free and RoHS compliant).
- What are the complementary NPN types for the BC857C transistor?
The complementary NPN types for the BC857C transistor are BC847...-BC850...).
- What is the maximum junction temperature of the BC857C transistor?
The maximum junction temperature (TJ) of the BC857C transistor is 150 °C).
- What is the total power dissipation of the BC857C transistor at ambient temperature ≤ 25 °C?
The total power dissipation (Ptot) of the BC857C transistor at ambient temperature ≤ 25 °C is 250 mW).
- What are some common applications of the BC857C transistor?
The BC857C transistor is commonly used in AF input stages, driver applications, general-purpose switching, and amplification, as well as in various automotive, industrial, and consumer applications).
- Is the BC857C transistor qualified for automotive use?
Yes, the BC857C transistor is qualified according to AEC Q101).
