MURS260-F1-3000HF
  • Share:

Yangzhou Yangjie Electronic Technology Co.,Ltd MURS260-F1-3000HF

Manufacturer No:
MURS260-F1-3000HF
Manufacturer:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 2A DO214AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS260 is a surface-mount ultrafast plastic rectifier from Vishay General Semiconductor. This component is designed for high-frequency rectification and freewheeling applications in switching mode converters and inverters. It features a glass passivated pallet chip junction, making it ideal for automated placement and high-efficiency operations.

Key Specifications

Parameter Symbol MURS260 Unit
Maximum Repetitive Peak Reverse Voltage VRRM 600 V
Maximum Average Forward Rectified Current at TL = 125 °C IF(AV) 2.0 A
Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load IFSM 35 A
Reverse Recovery Time trr 50 ns (typical), 75 ns (maximum) ns
Forward Voltage Drop VF 1.20 V (at IF = 2.0 A, TJ = 125 °C) V
Maximum Junction Temperature TJ -65 to +175 °C
Package SMB (DO-214AA)

Key Features

  • Glass passivated pallet chip junction
  • Ideal for automated placement
  • Ultrafast reverse recovery time
  • Low switching losses, high efficiency
  • High forward surge capability
  • Meets MSL level 1, per J-STD-020, with a maximum peak of 260 °C
  • AEC-Q101 qualified available (automotive grade)
  • RoHS-compliant
  • Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102

Applications

The MURS260 is used in high-frequency rectification and freewheeling applications in switching mode converters and inverters. These applications include consumer electronics, computer systems, and telecommunication equipment.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MURS260?

    The maximum repetitive peak reverse voltage (VRRM) of the MURS260 is 600 V.

  2. What is the maximum average forward rectified current of the MURS260?

    The maximum average forward rectified current (IF(AV)) of the MURS260 is 2.0 A at a lead temperature of 125 °C.

  3. What is the reverse recovery time of the MURS260?

    The reverse recovery time (trr) of the MURS260 is typically 50 ns and up to 75 ns under specific test conditions.

  4. What is the forward voltage drop of the MURS260?

    The forward voltage drop (VF) of the MURS260 is 1.20 V at an forward current of 2.0 A and a junction temperature of 125 °C.

  5. What is the maximum junction temperature of the MURS260?

    The maximum junction temperature (TJ) of the MURS260 is 175 °C.

  6. What package type is the MURS260 available in?

    The MURS260 is available in the SMB (DO-214AA) package.

  7. Is the MURS260 AEC-Q101 qualified?
  8. Is the MURS260 RoHS-compliant?
  9. What are the typical applications of the MURS260?

    The MURS260 is typically used in high-frequency rectification and freewheeling applications in switching mode converters and inverters for consumer, computer, and telecommunication systems.

  10. What are the key features of the MURS260?

    The key features include a glass passivated pallet chip junction, ultrafast reverse recovery time, low switching losses, high forward surge capability, and compliance with MSL level 1.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:24pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:DO-214AA (SMB)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.51
1,200

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26M20HE0/AA
DD26M20HE0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number MURS260-F1-3000HF MURS160-F1-3000HF
Manufacturer Yangzhou Yangjie Electronic Technology Co.,Ltd Yangzhou Yangjie Electronic Technology Co.,Ltd
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V
Current - Average Rectified (Io) 2A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 2 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V
Capacitance @ Vr, F 24pF @ 4V, 1MHz 14pF @ 4V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AC, SMA
Supplier Device Package DO-214AA (SMB) DO-214AC (SMA)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
MUR460-T
MUR460-T
Diodes Incorporated
FRED GPP RECTIFIER DO-201AD T&R
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35

Related Product By Brand

BAT54A-F2-0000HF
BAT54A-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 30V 0.2A SOT-23-3
BAS16W-F2-0000HF
BAS16W-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOD123
MURS120B-F1-0000HF
MURS120B-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AA
BZX84C22-F2-0000HF
BZX84C22-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
ZENER DIODE 22V 0.35W SOT-23-3L
BZX84C10-F2-0000HF
BZX84C10-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
ZENER DIODE 10V 0.35W SOT-23-3L
BC856B-F2-0000HF
BC856B-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS PNP 65V 0.1A SOT23
BC847A-F2-0000HF
BC847A-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS NPN 45V 0.1A SOT23
BC857CW-F2-0000HF
BC857CW-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS PNP 45V 0.1A SOT323
2N7002KDW-F2-0000HF
2N7002KDW-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 0.34A SOT-363
2N7002-F2-0000HF
2N7002-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 0.34A SOT-23-3L
2N7002W-F2-0000HF
2N7002W-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 0.34A SOT-323
BSS123-F2-0000HF
BSS123-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 100V 0.2A SOT-23-3L