SS8050-H-F2-0000HF
  • Share:

Yangzhou Yangjie Electronic Technology Co.,Ltd SS8050-H-F2-0000HF

Manufacturer No:
SS8050-H-F2-0000HF
Manufacturer:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Package:
Tape & Reel (TR)
Description:
TRANS NPN 25V 1.5A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SS8050-H-F2-0000HF is an NPN epitaxial silicon transistor produced by onsemi, though it may be distributed by various companies including Yangzhou Yangjie Electronic Technology Co., Ltd. This transistor is designed for general-purpose applications, particularly in amplification and switching tasks. It is known for its high current amplification, low noise, and excellent high-frequency performance. The SS8050 is complementary to the SS8550 PNP transistor, forming a complete transistor duo for various circuit designs.

Key Specifications

Parameter Symbol Value Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 1.5 A
Power Dissipation PD 1 W
Junction Temperature TJ -55 to 150 °C
Storage Temperature TSTG -65 to 150 °C
Transition Frequency FT 100 MHz
DC Current Gain (hFE) hFE 120-400
Collector-Emitter Saturation Voltage VCE(sat) 0.5 V
Base-Emitter Saturation Voltage VBE(sat) 1.2 V

Key Features

  • High Current Amplification: The SS8050 has a DC current gain (hFE) ranging from 120 to 400, making it suitable for applications requiring substantial signal amplification.
  • Low Noise and High-Frequency Performance: It exhibits excellent high-frequency performance, making it ideal for audio amplifiers and other high-frequency applications.
  • Complementary Transistor: It is complementary to the SS8550 PNP transistor, allowing for a complete transistor duo in circuit designs.
  • Compact Packaging: Available in SOT-23 and TO-92 packages, making it suitable for both surface-mount and through-hole PCB applications.
  • RoHS Compliant: The transistor is Pb-free, halogen-free, and BFR-free, ensuring compliance with environmental regulations.

Applications

  • Audio Amplifiers: Frequently used in power amplifiers for audio systems to ensure high performance and clear sound quality.
  • Switching Circuits: Suitable for various switching applications due to its high current amplification and low noise characteristics.
  • AC Power Supply Circuits: Ideal for scenarios requiring robust amplification and stable performance at relatively higher voltages.
  • Buffer Stages: Used in buffer stages to maintain signal amplitude and preserve signal fidelity.

Q & A

  1. What is the maximum collector current of the SS8050 transistor?

    The maximum collector current (IC) of the SS8050 transistor is 1.5 A.

  2. What are the typical package types for the SS8050 transistor?

    The SS8050 transistor is typically available in SOT-23 and TO-92 packages.

  3. What is the transition frequency of the SS8050 transistor?

    The transition frequency (FT) of the SS8050 transistor is 100 MHz.

  4. Is the SS8050 transistor RoHS compliant?

    Yes, the SS8050 transistor is Pb-free, halogen-free, and BFR-free, making it RoHS compliant.

  5. What is the collector-base breakdown voltage of the SS8050 transistor?

    The collector-base breakdown voltage (VCBO) of the SS8050 transistor is 40 V.

  6. What are the common configurations for using the SS8050 transistor in circuits?

    The SS8050 transistor can be used in common emitter and common collector configurations.

  7. What is the maximum junction temperature for the SS8050 transistor?

    The maximum junction temperature (TJ) for the SS8050 transistor is 150°C.

  8. How does the SS8050 transistor compare to the S8050 in terms of voltage and current gain?

    The SS8050 has a higher current gain (120-400) and a lower maximum voltage compared to the S8050, making it more suitable for high-power applications.

  9. What are some common applications of the SS8050 transistor?

    The SS8050 transistor is commonly used in audio amplifiers, switching circuits, AC power supply circuits, and buffer stages.

  10. How should the polarity and pin connections of the SS8050 transistor be verified?

    The polarity and pin connections should be verified by identifying the collector (marked 'C') and emitter (marked 'E') correctly, and using a multimeter to confirm these connections during circuit assembly.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):25 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 80mA, 800mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 100mA, 1V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.21
2,660

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60TX
DD44S32S60TX
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number SS8050-H-F2-0000HF SS8550-H-F2-0000HF
Manufacturer Yangzhou Yangjie Electronic Technology Co.,Ltd Yangzhou Yangjie Electronic Technology Co.,Ltd
Product Status Active Active
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 25 V 25 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 1V 120 @ 100mA, 1V
Power - Max 300 mW 300 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 SOT-23

Related Product By Categories

BCX56-16,115
BCX56-16,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BC33725BU
BC33725BU
onsemi
TRANS NPN 45V 0.8A TO92-3
TIP35CW
TIP35CW
STMicroelectronics
TRANS NPN 100V 25A TO247-3
PBSS4160U,115
PBSS4160U,115
Nexperia USA Inc.
TRANS NPN 60V 0.75A SOT323
MMBT2222ALT3G
MMBT2222ALT3G
onsemi
TRANS NPN 40V 0.6A SOT23-3
MMBT2907ALT1G
MMBT2907ALT1G
onsemi
TRANS PNP 60V 0.6A SOT23-3
BF840,215
BF840,215
Nexperia USA Inc.
TRANS NPN 40V 0.025A TO236AB
PMBT3904MB,315
PMBT3904MB,315
Nexperia USA Inc.
TRANS NPN 40V 0.2A DFN1006B-3
BC856AW-7-F
BC856AW-7-F
Diodes Incorporated
TRANS PNP 65V 0.1A SOT323
BC857CW-G
BC857CW-G
Comchip Technology
TRANS PNP 45V 0.1A SOT323
BC817K-40HR
BC817K-40HR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
S8050-D-AP
S8050-D-AP
Micro Commercial Co
TRANS NPN 25V 0.5A TO92

Related Product By Brand

BAS70-04-F2-0000HF
BAS70-04-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 70V 0.07A SOT-23-
MUR1620CT-B1-0000HF
MUR1620CT-B1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
FAST DIODE 200V 16A TO-220AB
BAS316-F2-0000HF
BAS316-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 100V 250MA SOD323
BAT54W-F2-0000HF
BAT54W-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 30V 200MA SOD123
BAT54WS-F2-0000HF
BAT54WS-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 30V 200MA SOD323
BAS21J-F2-0000HF
BAS21J-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
GEN PURP DIODE 300V 0.225A SOD-
BAS21-F2-0000HF
BAS21-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 250V 200MA SOT23
MURS120B-F1-0000HF
MURS120B-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AA
MUR840-B1-0000HF
MUR840-B1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 400V 8A TO220AC
BZX84C15-F2-0000HF
BZX84C15-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
ZENER DIODE 15V 0.35W SOT-23-3L
BC807-40W-F2-0000HF
BC807-40W-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS PNP 45V 0.5A SOT323
BSS84-F2-0000HF
BSS84-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
P-CH MOSFET 60V 0.17A SOT-23-3L