MBR10100FCT-B1-0000HF
  • Share:

Yangzhou Yangjie Electronic Technology Co.,Ltd MBR10100FCT-B1-0000HF

Manufacturer No:
MBR10100FCT-B1-0000HF
Manufacturer:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Package:
Tube
Description:
SCHOTTKY DIODE 100V 10A ITO-220A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR10100FCT-B1-0000HF Schottky diode, produced by Yangzhou Yangjie Electronic Technology Co., Ltd., is a high-performance rectifier designed for various high-frequency applications. This component is part of the Schottky diode family, known for its low forward voltage drop, high efficiency, and robust overvoltage protection.

Key Specifications

Parameter Symbol Value Unit
Maximum repetitive peak reverse voltage VRRM 100 V
Maximum average forward rectified current IF(AV) 10 A
Peak forward surge current IFSM 150 A
Maximum instantaneous forward voltage VF 0.61 V
Maximum reverse current IR 3.5 μA μA
Operating junction and storage temperature range TJ, TSTG -65 to +175 °C

Key Features

  • Power pack: Designed for high power applications.
  • Guardring for overvoltage protection: Enhances reliability by protecting against overvoltage conditions.
  • Low power loss, high efficiency: Minimizes energy loss and maximizes efficiency in high-frequency operations.
  • Low forward voltage drop: Reduces voltage drop during forward conduction, improving overall system efficiency.
  • Low leakage current: Ensures minimal current leakage, contributing to higher system reliability.
  • High forward surge capability: Handles high surge currents effectively.
  • High frequency operation: Suitable for high-frequency applications such as switching mode power supplies and DC/DC converters.

Applications

  • High frequency rectifier of switching mode power supplies
  • Freewheeling diodes
  • DC/DC converters
  • Polarity protection applications

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MBR10100FCT-B1-0000HF?

    The maximum repetitive peak reverse voltage is 100 V.

  2. What is the maximum average forward rectified current for this diode?

    The maximum average forward rectified current is 10 A.

  3. What is the peak forward surge current capability of this diode?

    The peak forward surge current is 150 A.

  4. What is the typical forward voltage drop of this diode?

    The typical forward voltage drop is 0.61 V at 5 A and 25 °C.

  5. What is the maximum reverse current of this diode?

    The maximum reverse current is 3.5 μA at rated VR and 25 °C.

  6. What is the operating junction and storage temperature range for this diode?

    The operating junction and storage temperature range is -65 to +175 °C.

  7. What are the typical applications of the MBR10100FCT-B1-0000HF?

    Typical applications include high frequency rectifiers in switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection.

  8. Does the MBR10100FCT-B1-0000HF have overvoltage protection?

    Yes, it features a guardring for overvoltage protection.

  9. Is the MBR10100FCT-B1-0000HF suitable for high-frequency operations?

    Yes, it is designed for high-frequency operations.

  10. What is the thermal performance of the MBR10100FCT-B1-0000HF?

    The diode has a typical thermal resistance and can handle high junction temperatures up to 175 °C.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:800 mV @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Operating Temperature - Junction:-55°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-220-3 Isolated Tab
Supplier Device Package:ITO-220AB
0 Remaining View Similar

In Stock

$0.97
176

Please send RFQ , we will respond immediately.

Same Series
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HV50/AA
DD26M20HV50/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD44S32S0TX
DD44S32S0TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MBR10100FCT-B1-0000HF MBR10200FCT-B1-0000HF
Manufacturer Yangzhou Yangjie Electronic Technology Co.,Ltd Yangzhou Yangjie Electronic Technology Co.,Ltd
Product Status Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 200 V
Current - Average Rectified (Io) (per Diode) 10A 10A
Voltage - Forward (Vf) (Max) @ If 800 mV @ 5 A 900 mV @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 100 µA @ 100 V 100 µA @ 200 V
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 Isolated Tab TO-220-3 Isolated Tab
Supplier Device Package ITO-220AB ITO-220AB

Related Product By Categories

BAT54CLT3G
BAT54CLT3G
onsemi
DIODE ARRAY SCHOTTKY 30V SOT23-3
BAV70E6327HTSA1
BAV70E6327HTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
MBRB20200CT
MBRB20200CT
SMC Diode Solutions
DIODE ARRAY SCHOTTKY 200V D2PAK
BAS4005E6433HTMA1
BAS4005E6433HTMA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS21AW,115
BAS21AW,115
Nexperia USA Inc.
DIODE ARRAY GP 250V 225MA SOT323
BAS40-04LT1G
BAS40-04LT1G
onsemi
DIODE ARRAY SCHOTTKY 40V SOT23-3
BAV99DW-7-F
BAV99DW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 215MA SOT363
BAW567DW-7-F
BAW567DW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
BAV70HDWQ-13
BAV70HDWQ-13
Diodes Incorporated
DIODE FS 100V 125MA SOT363
BAW56-G3-18
BAW56-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 250MA SOT23
BAT54BRW-7
BAT54BRW-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT363
MURB1620CT-T-F
MURB1620CT-T-F
Diodes Incorporated
DIODE ARRAY GP 200V 16A D2PAK

Related Product By Brand

BAV99-F2-0000HF
BAV99-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
GEN PURP DIODE 75V 0.2A SOT-23-
BAV70-F2-0000HF
BAV70-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
GEN PURP DIODE 75V 0.15A SOT-23
BAV199-F2-0000HF
BAV199-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
GEN PURP DIODE 100V 0.125A SOT-
MUR460-D1-0000
MUR460-D1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 4A DO201AD
1N4937G-D1-3000
1N4937G-D1-3000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 1A DO41
BAS21J-F2-0000HF
BAS21J-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
GEN PURP DIODE 300V 0.225A SOD-
BAT42W-F2-0000HF
BAT42W-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 30V 200MA SOD123
BAS16W-F2-0000HF
BAS16W-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOD123
BZX84B6V2-F2-0000HF
BZX84B6V2-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
ZENER DIODE 6.2V 0.35W SOT-23-3L
BZX84C5V1-F2-0000HF
BZX84C5V1-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
ZENER DIODE 5.1V 0.35W SOT-23-3L
BC817-40W-F2-0000HF
BC817-40W-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS NPN 45V 0.5A SOT323
BC857C-F2-0000HF
BC857C-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS PNP 45V 0.1A SOT23