1N4937GP-E3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4937GP-E3/54

Manufacturer No:
1N4937GP-E3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4937GP-E3/54 is a glass passivated junction fast switching rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high efficiency fast switching rectification, making it suitable for a variety of applications requiring reliable and efficient rectification.

Key Specifications

Attribute Value
Average Rectified Current (Max) 1 A
Reverse Current (Max) 5 µA
Forward Voltage (Max) 1.2 V
Reverse Voltage (Max) [Vrrm] 600 V
Reverse Recovery Time (Max) 200 ns
Package Style DO-41 (DO-204AL)
Mounting Method Through Hole
Operating Temperature - Junction -65°C to 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant

Key Features

  • Superectifier structure for high reliability conditions
  • Cavity-free glass-passivated junction
  • Fast switching for high efficiency
  • Low leakage current
  • High forward surge capability
  • Meets environmental standard MIL-S-19500
  • Solder dip 275 °C max. 10 s, per JESD 22-B106
  • AEC-Q101 qualified

Applications

  • Inverters
  • Power supply
  • Converters
  • Consumer electronics
  • Telecommunication

Q & A

  1. What is the maximum average rectified current of the 1N4937GP-E3/54?

    The maximum average rectified current is 1 A.

  2. What is the maximum reverse voltage of the 1N4937GP-E3/54?

    The maximum reverse voltage is 600 V.

  3. What is the reverse recovery time of the 1N4937GP-E3/54?

    The reverse recovery time is 200 ns.

  4. What is the package style of the 1N4937GP-E3/54?

    The package style is DO-41 (DO-204AL).

  5. Is the 1N4937GP-E3/54 RoHS compliant?
  6. What are the typical applications of the 1N4937GP-E3/54?

    The typical applications include inverters, power supplies, converters, consumer electronics, and telecommunication.

  7. What is the operating junction temperature range of the 1N4937GP-E3/54?

    The operating junction temperature range is -65°C to 175°C.

  8. Does the 1N4937GP-E3/54 meet any specific environmental standards?
  9. Is the 1N4937GP-E3/54 AEC-Q101 qualified?
  10. What is the moisture sensitivity level (MSL) of the 1N4937GP-E3/54?

    The moisture sensitivity level is 1 (Unlimited).

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):200 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.52
1,563

Please send RFQ , we will respond immediately.

Same Series
1N4936GP-E3/73
1N4936GP-E3/73
DIODE GEN PURP 400V 1A DO204AL
1N4934GP-E3/54
1N4934GP-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4937GP-E3/54
1N4937GP-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4933GP-E3/54
1N4933GP-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N4933GPHE3/73
1N4933GPHE3/73
DIODE GEN PURP 50V 1A DO204AL
1N4934GP-E3/73
1N4934GP-E3/73
DIODE GEN PURP 100V 1A DO204AL
1N4934GPHE3/73
1N4934GPHE3/73
DIODE GEN PURP 100V 1A DO204AL
1N4936GPHE3/73
1N4936GPHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4933GPHE3/54
1N4933GPHE3/54
DIODE GEN PURP 50V 1A DO204AL
1N4934GPE-E3/91
1N4934GPE-E3/91
DIODE GEN PURP 100V 1A DO204AL
1N4934GP-M3/73
1N4934GP-M3/73
DIODE GEN PURP 100V 1A DO204AL
1N4936GP-M3/73
1N4936GP-M3/73
DIODE GEN PURP 400V 1A DO204AL

Similar Products

Part Number 1N4937GP-E3/54 1N4947GP-E3/54 1N4937GPE-E3/54 1N4937GPHE3/54 1N4937GP-M3/54 1N4934GP-E3/54 1N4935GP-E3/54 1N4936GP-E3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Obsolete Obsolete Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 800 V 600 V 600 V 600 V 100 V 200 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A 1.3 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 200 ns 250 ns 200 ns 200 ns 200 ns 200 ns 200 ns 200 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 1 µA @ 800 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC

Related Product By Brand

SM6T220A-M3/52
SM6T220A-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM15T150CAHE3_A/I
SM15T150CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AB
SM6T220CAHM3/I
SM6T220CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
BAT54S-HE3-08
BAT54S-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
BAT54C-E3-08
BAT54C-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 30V SOT23
BAS21-E3-08
BAS21-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 200MA SOT23
BAT43WS-HE3-18
BAT43WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
MUR160-E3/54
MUR160-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AC
BZX84C18-HE3-08
BZX84C18-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 18V 300MW SOT23-3
BZX84B2V4-HE3-08
BZX84B2V4-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 300MW SOT23-3
BZX84C30-E3-18
BZX84C30-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 300MW SOT23-3
BZX84B24-E3-08
BZX84B24-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 23.5V 300MW SOT23-3