1N4937GPHE3/54
  • Share:

Vishay General Semiconductor - Diodes Division 1N4937GPHE3/54

Manufacturer No:
1N4937GPHE3/54
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4937GPHE3/54 is a fast switching plastic rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is part of the 1N4933GP to 1N4937GP series, known for their high reliability and efficiency in various electrical applications. Although the specific part number 1N4937GPHE3/54 is noted as obsolete, the general characteristics and applications of this series remain relevant.

The diodes in this series feature a superectifier structure, which enhances their reliability and performance. They are designed for fast switching, making them suitable for high-efficiency applications. The components are also characterized by low leakage current, high forward surge capability, and a robust thermal resistance.

Key Specifications

Parameter Symbol 1N4937GP Unit
Maximum Repetitive Peak Reverse Voltage VRRM 600 V
Maximum RMS Voltage VRMS 420 V
Maximum DC Blocking Voltage VDC 600 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current IFSM 30 A
Maximum Instantaneous Forward Voltage VF 1.2 V
Maximum DC Reverse Current IR 5.0 μA μA
Reverse Recovery Time trr 200 ns ns
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C °C
Package DO-41 (DO-204AL)

Key Features

  • Superectifier Structure: Enhances reliability and performance.
  • Fast Switching: High efficiency in switching applications.
  • Low Leakage Current: Minimizes power loss.
  • High Forward Surge Capability: Handles high surge currents.
  • Robust Thermal Resistance: Typical thermal resistance from junction to ambient is 55 °C/W.
  • Solderable Leads: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102.
  • RoHS-compliant: Meets environmental standards.

Applications

  • Fast Switching Rectification: Used in power supplies, inverters, and converters.
  • Freewheeling Diodes: Suitable for consumer and telecommunication applications.
  • General Rectification: Applicable in various industrial and consumer electronics.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4937GP?

    The maximum repetitive peak reverse voltage (VRRM) is 600 V.

  2. What is the maximum average forward rectified current of the 1N4937GP?

    The maximum average forward rectified current (IF(AV)) is 1.0 A.

  3. What is the peak forward surge current of the 1N4937GP?

    The peak forward surge current (IFSM) is 30 A.

  4. What is the typical reverse recovery time of the 1N4937GP?

    The typical reverse recovery time (trr) is 200 ns.

  5. What is the operating junction and storage temperature range of the 1N4937GP?

    The operating junction and storage temperature range (TJ, TSTG) is -65 to +175 °C.

  6. What package type is used for the 1N4937GP?

    The package type is DO-41 (DO-204AL).

  7. Is the 1N4937GP RoHS-compliant?
  8. What are the typical applications of the 1N4937GP?

    The 1N4937GP is typically used in fast switching rectification, freewheeling diodes, and general rectification in consumer and telecommunication applications.

  9. What is the maximum instantaneous forward voltage of the 1N4937GP?

    The maximum instantaneous forward voltage (VF) is 1.2 V.

  10. What is the maximum DC reverse current of the 1N4937GP at rated DC blocking voltage?

    The maximum DC reverse current (IR) at rated DC blocking voltage is 5.0 μA at 25 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):200 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
551

Please send RFQ , we will respond immediately.

Same Series
1N4936GP-E3/73
1N4936GP-E3/73
DIODE GEN PURP 400V 1A DO204AL
1N4934GP-E3/54
1N4934GP-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4937GP-E3/73
1N4937GP-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4937GP-E3/54
1N4937GP-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4933GP-E3/54
1N4933GP-E3/54
DIODE GEN PURP 50V 1A DO204AL
1N4935GP-E3/54
1N4935GP-E3/54
DIODE GEN PURP 200V 1A DO204AL
1N4934GP-E3/73
1N4934GP-E3/73
DIODE GEN PURP 100V 1A DO204AL
1N4934GPHE3/73
1N4934GPHE3/73
DIODE GEN PURP 100V 1A DO204AL
1N4935GPHE3/73
1N4935GPHE3/73
DIODE GEN PURP 200V 1A DO204AL
1N4936GPHE3/73
1N4936GPHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4934GPE-E3/91
1N4934GPE-E3/91
DIODE GEN PURP 100V 1A DO204AL
1N4934GPEHE3/91
1N4934GPEHE3/91
DIODE GEN PURP 100V 1A DO204AL

Similar Products

Part Number 1N4937GPHE3/54 1N4947GPHE3/54 1N4937GPHM3/54 1N4934GPHE3/54 1N4935GPHE3/54 1N4936GPHE3/54 1N4937GP-E3/54 1N4937GPEHE3/54
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 800 V 600 V 100 V 200 V 400 V 600 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 1 A 1.3 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A 1.2 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 200 ns 250 ns 200 ns 200 ns 200 ns 200 ns 200 ns 200 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 1 µA @ 800 V 5 µA @ 600 V 5 µA @ 100 V 5 µA @ 200 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 600 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 12pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -50°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
MBRM120LT3
MBRM120LT3
onsemi
DIODE SCHOTTKY 1A 20V POWERMITE
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

SM6T22CA-M3/52
SM6T22CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
SM6T150AHE3_A/I
SM6T150AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM6T27A-E3/5B
SM6T27A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 23.1VWM 37.5VC DO214AA
SM15T30CAHE3_A/I
SM15T30CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB
SM6T33CAHE3/5B
SM6T33CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
BAS16WS-E3-08
BAS16WS-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
MURS140-E3/52T
MURS140-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 2A DO214AA
BZX85C15-TAP
BZX85C15-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 1.3W DO204AL
BZX85C15-TR
BZX85C15-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 1.3W DO204AL
BZX384B75-E3-08
BZX384B75-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 200MW SOD323
BZX84C24-E3-18
BZX84C24-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 24V 300MW SOT23-3
BZX84C30-HE3-08
BZX84C30-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 300MW SOT23-3