BAS16WS-E3-08
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Vishay General Semiconductor - Diodes Division BAS16WS-E3-08

Manufacturer No:
BAS16WS-E3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16WS-E3-08 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for general-purpose applications and is known for its fast switching capabilities and robust electrical characteristics. It is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. The diode is also RoHS-compliant, ensuring it meets environmental standards. It is packaged in the SOD-323 (SC-76) case, which is a surface-mount type, facilitating easy integration into modern electronic designs.

Key Specifications

Parameter Test Condition Symbol Value Unit
Reverse Voltage Tamb = 25 °C VR 75 V
Repetitive Peak Reverse Voltage Tamb = 25 °C VRRM 100 V
Forward Current (Continuous) Tamb = 25 °C IF 250 mA
Non-repetitive Peak Forward Current t = 1 μs IFSM 2 A
Non-repetitive Peak Forward Current t = 1 ms IFSM 1 A
Non-repetitive Peak Forward Current t = 1 s IFSM 0.5 A
Power Dissipation Tamb = 25 °C Ptot 200 mW
Thermal Resistance Junction to Ambient Air Tamb = 25 °C RthJA 650 K/W
Junction Temperature Tj -55 to +150 °C
Storage Temperature Range Tstg -65 to +150 °C
Operating Temperature Range Top -55 to +150 °C
Forward Voltage IF = 150 mA VF 1.25 V
Leakage Current VR = 75 V, TJ = 150 °C IR 50 μA
Diode Capacitance VR = 0, f = 1 MHz CD 2 pF
Reverse Recovery Time IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100 Ω trr 6 ns

Key Features

  • Fast Switching Capability: The BAS16WS-E3-08 features a fast recovery time of 6 ns, making it suitable for high-frequency applications.
  • AEC-Q101 Qualified: This diode is qualified for automotive applications, ensuring reliability and performance in demanding environments.
  • RoHS Compliant: The diode meets RoHS standards, making it environmentally friendly.
  • Surface Mount Package: Packaged in SOD-323 (SC-76), it is designed for surface mount technology, facilitating easy integration into modern electronic designs.
  • Low Forward Voltage Drop: With a forward voltage drop of 1.25 V at 150 mA, it minimizes power loss in the circuit.
  • High Junction Temperature Range: Operates within a junction temperature range of -55°C to +150°C, ensuring stability across various operating conditions.

Applications

  • Automotive Systems: Due to its AEC-Q101 qualification, it is widely used in automotive electronics for various applications such as power management and signal processing.
  • Consumer Electronics: Suitable for use in consumer electronics like smartphones, tablets, and other portable devices where fast switching and low power consumption are critical.
  • Industrial Control Systems: Used in industrial control systems for signal switching and protection due to its robust electrical characteristics.
  • Power Supplies: Employed in power supply circuits to ensure efficient and reliable operation.

Q & A

  1. What is the maximum reverse voltage of the BAS16WS-E3-08 diode?

    The maximum reverse voltage is 75 V.

  2. What is the continuous forward current rating of the BAS16WS-E3-08?

    The continuous forward current rating is 250 mA.

  3. What is the reverse recovery time of the BAS16WS-E3-08?

    The reverse recovery time is 6 ns.

  4. Is the BAS16WS-E3-08 RoHS compliant?
  5. What is the junction temperature range of the BAS16WS-E3-08?

    The junction temperature range is -55°C to +150°C.

  6. What is the package type of the BAS16WS-E3-08?

    The package type is SOD-323 (SC-76), which is a surface mount type.

  7. What is the maximum power dissipation of the BAS16WS-E3-08?

    The maximum power dissipation is 200 mW.

  8. Is the BAS16WS-E3-08 suitable for automotive applications?
  9. What is the forward voltage drop at 150 mA for the BAS16WS-E3-08?

    The forward voltage drop at 150 mA is 1.25 V.

  10. What is the diode capacitance of the BAS16WS-E3-08 at 1 MHz?

    The diode capacitance at 1 MHz is 2 pF.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:150°C (Max)
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Same Series
BAS16WS-E3-08
BAS16WS-E3-08
DIODE GEN PURP 75V 250MA SOD323
BAS16WS-HE3-08
BAS16WS-HE3-08
DIODE GEN PURP 75V 250MA SOD323
BAS16WS-HE3-18
BAS16WS-HE3-18
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Similar Products

Part Number BAS16WS-E3-08 BAS16WS-HE3-08 BAS16WS-G3-08 BAS16WS-E3-18
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 250mA (DC) 250mA 250mA 250mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323 SC-76, SOD-323 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323 SOD-323 SOD-323
Operating Temperature - Junction 150°C (Max) -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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