BAS16WS-E3-18
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Vishay General Semiconductor - Diodes Division BAS16WS-E3-18

Manufacturer No:
BAS16WS-E3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16WS-E3-18 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high reliability and fast switching applications. It features a silicon epitaxial planar structure and is glass passivated, ensuring high performance and durability. The BAS16WS-E3-18 is RoHS-compliant and AEC-Q101 qualified, making it suitable for a wide range of automotive and industrial applications.

Key Specifications

ParameterValueUnit
Reverse Voltage (VR)75V
Repetitive Peak Reverse Voltage (VRRM)100V
Forward Current (Continuous) (IF)250mA
Non-Repetitive Peak Forward Current (IFSM) at 1 μs2A
Non-Repetitive Peak Forward Current (IFSM) at 1 ms1A
Non-Repetitive Peak Forward Current (IFSM) at 1 s0.5A
Power Dissipation (Ptot)200mW
Thermal Resistance Junction to Ambient Air (RthJA)650K/W
Junction Temperature (Tj)-55 to +150°C
Storage Temperature Range (Tstg)-65 to +150°C
Operating Temperature Range (Top)-55 to +150°C
Forward Voltage (VF) at IF = 150 mA1.25V
Reverse Recovery Time (trr)6ns
Diode Capacitance (CD) at VR = 0, f = 1 MHz2pF
PackageSOT-323

Key Features

  • Silicon epitaxial planar diode with a superectifier structure for high reliability.
  • Fast switching diode with a reverse recovery time of 6 ns.
  • Glass passivated junction for enhanced durability.
  • AEC-Q101 qualified and RoHS-compliant, making it suitable for automotive and industrial applications.
  • High forward current capability of up to 250 mA.
  • Low forward voltage drop, with VF = 1.25 V at IF = 150 mA.
  • Low diode capacitance of 2 pF at VR = 0, f = 1 MHz.

Applications

The BAS16WS-E3-18 is versatile and can be used in various applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • Industrial control systems: Its high reliability and fast switching capabilities make it ideal for industrial control and automation.
  • Consumer electronics: It can be used in a variety of consumer electronic devices requiring fast switching and high reliability.
  • Power supplies: The diode’s characteristics make it suitable for use in power supply circuits.

Q & A

  1. What is the maximum reverse voltage of the BAS16WS-E3-18?
    The maximum reverse voltage (VR) is 75 V.
  2. What is the forward current rating of the BAS16WS-E3-18?
    The forward current rating is 250 mA.
  3. What is the reverse recovery time of the BAS16WS-E3-18?
    The reverse recovery time (trr) is 6 ns.
  4. Is the BAS16WS-E3-18 RoHS-compliant?
    Yes, the BAS16WS-E3-18 is RoHS-compliant.
  5. What is the operating temperature range of the BAS16WS-E3-18?
    The operating temperature range is -55°C to +150°C.
  6. What is the package type of the BAS16WS-E3-18?
    The package type is SOT-323.
  7. What is the diode capacitance of the BAS16WS-E3-18?
    The diode capacitance (CD) is 2 pF at VR = 0, f = 1 MHz.
  8. Is the BAS16WS-E3-18 AEC-Q101 qualified?
    Yes, the BAS16WS-E3-18 is AEC-Q101 qualified.
  9. What is the maximum junction temperature of the BAS16WS-E3-18?
    The maximum junction temperature (Tj) is 150°C.
  10. What is the storage temperature range of the BAS16WS-E3-18?
    The storage temperature range (Tstg) is -65°C to +150°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:-55°C ~ 150°C
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Same Series
BAS16WS-HE3-08
BAS16WS-HE3-08
DIODE GEN PURP 75V 250MA SOD323
BAS16WS-E3-18
BAS16WS-E3-18
DIODE GEN PURP 75V 250MA SOD323
BAS16WS-HE3-18
BAS16WS-HE3-18
DIODE GEN PURP 75V 250MA SOD323

Similar Products

Part Number BAS16WS-E3-18 BAS16WS-HE3-18 BAS16WS-G3-18 BAS16WS-E3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 250mA 250mA 250mA 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323 SC-76, SOD-323 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323 SOD-323 SOD-323
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C 150°C (Max)

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