BAS16WS-HE3-18
  • Share:

Vishay General Semiconductor - Diodes Division BAS16WS-HE3-18

Manufacturer No:
BAS16WS-HE3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16WS-HE3-18 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-speed switching applications and is available in the SOD-323 package. It is RoHS-compliant and AEC-Q101 qualified, making it suitable for a wide range of automotive and industrial applications. The BAS16WS-HE3-18 is known for its low forward voltage drop, high switching speed, and robust thermal performance.

Key Specifications

ParameterSymbolValueUnit
Reverse VoltageVR75V
Repetitive Peak Reverse VoltageVRRM100V
Forward Current (Continuous)IF250mA
Non-Repetitive Peak Forward Current (t = 1 μs)IFSM2A
Non-Repetitive Peak Forward Current (t = 1 ms)IFSM1A
Non-Repetitive Peak Forward Current (t = 1 s)IFSM0.5A
Power DissipationPtot200mW
Thermal Resistance Junction to Ambient AirRthJA650K/W
Junction TemperatureTj150°C
Storage Temperature RangeTstg-65 to +150°C
Operating Temperature RangeTop-55 to +150°C
Forward Voltage (IF = 150 mA)VF1.250V
Forward Voltage (IF = 1 mA)VF0.715V
Leakage Current (VR = 75 V)IR1000 nA
Reverse Recovery Timetrr6 ns

Key Features

  • Fast switching speed with a reverse recovery time of 6 ns.
  • Low forward voltage drop, making it efficient for high-speed applications.
  • High repetitive peak reverse voltage (VRRM) of 100 V.
  • RoHS-compliant and AEC-Q101 qualified, ensuring reliability in automotive and industrial environments.
  • Compact SOD-323 package suitable for surface mount applications.
  • Wide operating temperature range from -55°C to +150°C.

Applications

The BAS16WS-HE3-18 diode is versatile and can be used in various applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • Industrial control systems: Its robust thermal performance and high switching speed make it ideal for industrial control circuits.
  • Consumer electronics: It can be used in power supply circuits, signal processing, and other high-speed switching applications.
  • Communication equipment: The diode’s low forward voltage drop and fast switching capabilities make it suitable for communication devices.

Q & A

  1. What is the maximum reverse voltage of the BAS16WS-HE3-18 diode?
    The maximum reverse voltage is 75 V, and the repetitive peak reverse voltage (VRRM) is 100 V.
  2. What is the continuous forward current rating of the BAS16WS-HE3-18?
    The continuous forward current rating is 250 mA.
  3. What is the reverse recovery time of the BAS16WS-HE3-18?
    The reverse recovery time is 6 ns.
  4. Is the BAS16WS-HE3-18 RoHS-compliant?
    Yes, the BAS16WS-HE3-18 is RoHS-compliant.
  5. What is the operating temperature range of the BAS16WS-HE3-18?
    The operating temperature range is from -55°C to +150°C.
  6. What package type is the BAS16WS-HE3-18 available in?
    The BAS16WS-HE3-18 is available in the SOD-323 package.
  7. What are some typical applications of the BAS16WS-HE3-18?
    It is used in automotive systems, industrial control systems, consumer electronics, and communication equipment.
  8. What is the maximum junction temperature of the BAS16WS-HE3-18?
    The maximum junction temperature is 150°C.
  9. What is the power dissipation rating of the BAS16WS-HE3-18?
    The power dissipation rating is 200 mW.
  10. Is the BAS16WS-HE3-18 AEC-Q101 qualified?
    Yes, the BAS16WS-HE3-18 is AEC-Q101 qualified.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.23
2,897

Please send RFQ , we will respond immediately.

Same Series
BAS16WS-E3-08
BAS16WS-E3-08
DIODE GEN PURP 75V 250MA SOD323
BAS16WS-HE3-08
BAS16WS-HE3-08
DIODE GEN PURP 75V 250MA SOD323
BAS16WS-HE3-18
BAS16WS-HE3-18
DIODE GEN PURP 75V 250MA SOD323

Similar Products

Part Number BAS16WS-HE3-18 BAS16WS-E3-18 BAS16WS-HE3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V
Current - Average Rectified (Io) 250mA 250mA 250mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323 SOD-323
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STTH512D
STTH512D
STMicroelectronics
DIODE GEN PURP 1.2KV 5A TO220AC
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15

Related Product By Brand

SM15T36AHM3_A/H
SM15T36AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM15T150CAHE3_A/H
SM15T150CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AB
SM6T200AHE3/5B
SM6T200AHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AA
SM15T24AHE3_A/H
SM15T24AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB
SM6T68AHM3/H
SM6T68AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
BAV23C-G3-08
BAV23C-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 200MA SOT23
MBRB10100CT-E3/8W
MBRB10100CT-E3/8W
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V TO263
MUR460-E3/73
MUR460-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 4A DO201AD
BYW29-200-E3/45
BYW29-200-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
BZX84C24-E3-18
BZX84C24-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 24V 300MW SOT23-3
BZX384C20-E3-18
BZX384C20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 20V 200MW SOD323
BZX84B4V3-E3-18
BZX84B4V3-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.3V 300MW SOT23-3