BAS16WS-HE3-18
  • Share:

Vishay General Semiconductor - Diodes Division BAS16WS-HE3-18

Manufacturer No:
BAS16WS-HE3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16WS-HE3-18 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-speed switching applications and is available in the SOD-323 package. It is RoHS-compliant and AEC-Q101 qualified, making it suitable for a wide range of automotive and industrial applications. The BAS16WS-HE3-18 is known for its low forward voltage drop, high switching speed, and robust thermal performance.

Key Specifications

ParameterSymbolValueUnit
Reverse VoltageVR75V
Repetitive Peak Reverse VoltageVRRM100V
Forward Current (Continuous)IF250mA
Non-Repetitive Peak Forward Current (t = 1 μs)IFSM2A
Non-Repetitive Peak Forward Current (t = 1 ms)IFSM1A
Non-Repetitive Peak Forward Current (t = 1 s)IFSM0.5A
Power DissipationPtot200mW
Thermal Resistance Junction to Ambient AirRthJA650K/W
Junction TemperatureTj150°C
Storage Temperature RangeTstg-65 to +150°C
Operating Temperature RangeTop-55 to +150°C
Forward Voltage (IF = 150 mA)VF1.250V
Forward Voltage (IF = 1 mA)VF0.715V
Leakage Current (VR = 75 V)IR1000 nA
Reverse Recovery Timetrr6 ns

Key Features

  • Fast switching speed with a reverse recovery time of 6 ns.
  • Low forward voltage drop, making it efficient for high-speed applications.
  • High repetitive peak reverse voltage (VRRM) of 100 V.
  • RoHS-compliant and AEC-Q101 qualified, ensuring reliability in automotive and industrial environments.
  • Compact SOD-323 package suitable for surface mount applications.
  • Wide operating temperature range from -55°C to +150°C.

Applications

The BAS16WS-HE3-18 diode is versatile and can be used in various applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • Industrial control systems: Its robust thermal performance and high switching speed make it ideal for industrial control circuits.
  • Consumer electronics: It can be used in power supply circuits, signal processing, and other high-speed switching applications.
  • Communication equipment: The diode’s low forward voltage drop and fast switching capabilities make it suitable for communication devices.

Q & A

  1. What is the maximum reverse voltage of the BAS16WS-HE3-18 diode?
    The maximum reverse voltage is 75 V, and the repetitive peak reverse voltage (VRRM) is 100 V.
  2. What is the continuous forward current rating of the BAS16WS-HE3-18?
    The continuous forward current rating is 250 mA.
  3. What is the reverse recovery time of the BAS16WS-HE3-18?
    The reverse recovery time is 6 ns.
  4. Is the BAS16WS-HE3-18 RoHS-compliant?
    Yes, the BAS16WS-HE3-18 is RoHS-compliant.
  5. What is the operating temperature range of the BAS16WS-HE3-18?
    The operating temperature range is from -55°C to +150°C.
  6. What package type is the BAS16WS-HE3-18 available in?
    The BAS16WS-HE3-18 is available in the SOD-323 package.
  7. What are some typical applications of the BAS16WS-HE3-18?
    It is used in automotive systems, industrial control systems, consumer electronics, and communication equipment.
  8. What is the maximum junction temperature of the BAS16WS-HE3-18?
    The maximum junction temperature is 150°C.
  9. What is the power dissipation rating of the BAS16WS-HE3-18?
    The power dissipation rating is 200 mW.
  10. Is the BAS16WS-HE3-18 AEC-Q101 qualified?
    Yes, the BAS16WS-HE3-18 is AEC-Q101 qualified.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.23
2,897

Please send RFQ , we will respond immediately.

Same Series
BAS16WS-HE3-08
BAS16WS-HE3-08
DIODE GEN PURP 75V 250MA SOD323
BAS16WS-E3-18
BAS16WS-E3-18
DIODE GEN PURP 75V 250MA SOD323
BAS16WS-HE3-18
BAS16WS-HE3-18
DIODE GEN PURP 75V 250MA SOD323

Similar Products

Part Number BAS16WS-HE3-18 BAS16WS-E3-18 BAS16WS-HE3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V
Current - Average Rectified (Io) 250mA 250mA 250mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323 SOD-323
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
MUR460-T
MUR460-T
Diodes Incorporated
FRED GPP RECTIFIER DO-201AD T&R
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T18CA-E3/52
SM6T18CA-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM6T7V5CA-E3/52
SM6T7V5CA-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AA
SM6T27AHM3_A/I
SM6T27AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 23.1VWM 37.5VC DO214AA
SM15T18AHM3_A/I
SM15T18AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
SM15T150CAHE3_A/I
SM15T150CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AB
1.5KE6.8A-E3/51
1.5KE6.8A-E3/51
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC 1.5KE
SM15T24AHE3/9AT
SM15T24AHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB
SM6T39CAHE3/52
SM6T39CAHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
BAS70-06-E3-08
BAS70-06-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
BZX84C16-HE3-18
BZX84C16-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 300MW SOT23-3
BZX84B2V4-HE3-08
BZX84B2V4-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 300MW SOT23-3
BZX384C6V8-HE3-18
BZX384C6V8-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 200MW SOD323