BAS16WS-HE3-18
  • Share:

Vishay General Semiconductor - Diodes Division BAS16WS-HE3-18

Manufacturer No:
BAS16WS-HE3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16WS-HE3-18 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-speed switching applications and is available in the SOD-323 package. It is RoHS-compliant and AEC-Q101 qualified, making it suitable for a wide range of automotive and industrial applications. The BAS16WS-HE3-18 is known for its low forward voltage drop, high switching speed, and robust thermal performance.

Key Specifications

ParameterSymbolValueUnit
Reverse VoltageVR75V
Repetitive Peak Reverse VoltageVRRM100V
Forward Current (Continuous)IF250mA
Non-Repetitive Peak Forward Current (t = 1 μs)IFSM2A
Non-Repetitive Peak Forward Current (t = 1 ms)IFSM1A
Non-Repetitive Peak Forward Current (t = 1 s)IFSM0.5A
Power DissipationPtot200mW
Thermal Resistance Junction to Ambient AirRthJA650K/W
Junction TemperatureTj150°C
Storage Temperature RangeTstg-65 to +150°C
Operating Temperature RangeTop-55 to +150°C
Forward Voltage (IF = 150 mA)VF1.250V
Forward Voltage (IF = 1 mA)VF0.715V
Leakage Current (VR = 75 V)IR1000 nA
Reverse Recovery Timetrr6 ns

Key Features

  • Fast switching speed with a reverse recovery time of 6 ns.
  • Low forward voltage drop, making it efficient for high-speed applications.
  • High repetitive peak reverse voltage (VRRM) of 100 V.
  • RoHS-compliant and AEC-Q101 qualified, ensuring reliability in automotive and industrial environments.
  • Compact SOD-323 package suitable for surface mount applications.
  • Wide operating temperature range from -55°C to +150°C.

Applications

The BAS16WS-HE3-18 diode is versatile and can be used in various applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • Industrial control systems: Its robust thermal performance and high switching speed make it ideal for industrial control circuits.
  • Consumer electronics: It can be used in power supply circuits, signal processing, and other high-speed switching applications.
  • Communication equipment: The diode’s low forward voltage drop and fast switching capabilities make it suitable for communication devices.

Q & A

  1. What is the maximum reverse voltage of the BAS16WS-HE3-18 diode?
    The maximum reverse voltage is 75 V, and the repetitive peak reverse voltage (VRRM) is 100 V.
  2. What is the continuous forward current rating of the BAS16WS-HE3-18?
    The continuous forward current rating is 250 mA.
  3. What is the reverse recovery time of the BAS16WS-HE3-18?
    The reverse recovery time is 6 ns.
  4. Is the BAS16WS-HE3-18 RoHS-compliant?
    Yes, the BAS16WS-HE3-18 is RoHS-compliant.
  5. What is the operating temperature range of the BAS16WS-HE3-18?
    The operating temperature range is from -55°C to +150°C.
  6. What package type is the BAS16WS-HE3-18 available in?
    The BAS16WS-HE3-18 is available in the SOD-323 package.
  7. What are some typical applications of the BAS16WS-HE3-18?
    It is used in automotive systems, industrial control systems, consumer electronics, and communication equipment.
  8. What is the maximum junction temperature of the BAS16WS-HE3-18?
    The maximum junction temperature is 150°C.
  9. What is the power dissipation rating of the BAS16WS-HE3-18?
    The power dissipation rating is 200 mW.
  10. Is the BAS16WS-HE3-18 AEC-Q101 qualified?
    Yes, the BAS16WS-HE3-18 is AEC-Q101 qualified.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.23
2,897

Please send RFQ , we will respond immediately.

Same Series
BAS16WS-HE3-08
BAS16WS-HE3-08
DIODE GEN PURP 75V 250MA SOD323
BAS16WS-E3-18
BAS16WS-E3-18
DIODE GEN PURP 75V 250MA SOD323
BAS16WS-HE3-18
BAS16WS-HE3-18
DIODE GEN PURP 75V 250MA SOD323

Similar Products

Part Number BAS16WS-HE3-18 BAS16WS-E3-18 BAS16WS-HE3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V
Current - Average Rectified (Io) 250mA 250mA 250mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 6 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323 SOD-323
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
MURS120T3G
MURS120T3G
onsemi
DIODE GEN PURP 200V 1A SMB
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

SM6T12A-M3/5B
SM6T12A-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM6T36CA-M3/52
SM6T36CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AA
SM6T30CAHE3_A/I
SM6T30CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
1.5KE6.8A-E3/73
1.5KE6.8A-E3/73
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC 1.5KE
SM15T200CA-M3/9AT
SM15T200CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
SM6T7V5AHE3/5B
SM6T7V5AHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AA
SM15T12AHE3/57T
SM15T12AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
1N4148W-E3-18
1N4148W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
LL4148-M-18
LL4148-M-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 300MA SOD80
BAS20-E3-08
BAS20-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
BAT42W-HE3-18
BAT42W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAS86-M-08
BAS86-M-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80