1N4002GPE-E3/91
  • Share:

Vishay General Semiconductor - Diodes Division 1N4002GPE-E3/91

Manufacturer No:
1N4002GPE-E3/91
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 100V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002GPE-E3/91 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400xGP series, known for its high reliability and suitability for various consumer and industrial applications. The 'GP' suffix indicates a glass-passivated junction, which enhances the diode's performance and durability.

Key Specifications

Parameter Symbol 1N4002GPE-E3/91 Unit
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum RMS Voltage VRMS 70 V
Maximum DC Blocking Voltage VDC 100 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms sine-wave) IFSM 30 A
Non-repetitive Peak Forward Surge Current (square waveform, tp = 1 ms) IFSM 45 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 μA
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Package DO-41 (DO-204AL)

Key Features

  • Superectifier Structure: High reliability application due to the superectifier structure.
  • Glass-Passivated Junction: Cavity-free glass-passivated junction for enhanced performance and durability.
  • Low Forward Voltage Drop: Maximum instantaneous forward voltage of 1.1 V at 1.0 A.
  • Low Leakage Current: Typical reverse current less than 5.0 μA at rated DC blocking voltage.
  • High Forward Surge Capability: Peak forward surge current of 30 A for 8.3 ms sine-wave and 45 A for square waveform with tp = 1 ms.
  • Solderable Leads: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102.
  • RoHS-Compliant: Commercial grade, RoHS-compliant, and meets JESD 201 class 1A whisker test.

Applications

The 1N4002GPE-E3/91 is suitable for various applications, including:

  • General purpose rectification in power supplies.
  • Inverters and converters.
  • Freewheeling diodes.
  • Consumer and industrial electronics.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4002GPE-E3/91?

    The maximum repetitive peak reverse voltage is 100 V.

  2. What is the maximum average forward rectified current of the 1N4002GPE-E3/91?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current for an 8.3 ms sine-wave?

    The peak forward surge current for an 8.3 ms sine-wave is 30 A.

  4. What is the maximum instantaneous forward voltage at 1.0 A?

    The maximum instantaneous forward voltage at 1.0 A is 1.1 V.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -65 to +175 °C.

  6. Is the 1N4002GPE-E3/91 RoHS-compliant?
  7. What type of package does the 1N4002GPE-E3/91 come in?

    The 1N4002GPE-E3/91 comes in a DO-41 (DO-204AL) package.

  8. What are the typical applications of the 1N4002GPE-E3/91?

    The typical applications include general purpose rectification in power supplies, inverters, converters, and freewheeling diodes.

  9. What is the maximum DC reverse current at rated DC blocking voltage?

    The maximum DC reverse current at rated DC blocking voltage is 5.0 μA.

  10. Is the 1N4002GPE-E3/91 suitable for consumer applications?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
475

Please send RFQ , we will respond immediately.

Same Series
1N4005GPE-E3/54
1N4005GPE-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4002GPE-E3/73
1N4002GPE-E3/73
DIODE GEN PURP 100V 1A DO204AL
1N4002GPHE3/73
1N4002GPHE3/73
DIODE GEN PURP 100V 1A DO204AL
1N4003GPHE3/73
1N4003GPHE3/73
DIODE GEN PURP 200V 1A DO204AL
1N4006GPHE3/73
1N4006GPHE3/73
DIODE GEN PURP 800V 1A DO204AL
1N4007GPEHE3/73
1N4007GPEHE3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4001GPEHE3/54
1N4001GPEHE3/54
DIODE GEN PURP 50V 1A DO204AL
1N4002GPEHE3/54
1N4002GPEHE3/54
DIODE GEN PURP 100V 1A DO204AL
1N4001GPHE3/54
1N4001GPHE3/54
DIODE GEN PURP 50V 1A DO204AL
1N4002GPE-E3/91
1N4002GPE-E3/91
DIODE GEN PURP 100V 1A DO204AL
1N4004GPEHE3/91
1N4004GPEHE3/91
DIODE GEN PURP 400V 1A DO204AL
1N4004GPEHE3/93
1N4004GPEHE3/93
DIODE GEN PURP 400V 1A DO204AL

Similar Products

Part Number 1N4002GPE-E3/91 1N4002GPEHE3/91
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 100 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
PMEG1020EH,115
PMEG1020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 10V 2A SOD123F
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL

Related Product By Brand

SM6T220A-M3/52
SM6T220A-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T18AHM3/I
SM6T18AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM6T68CAHM3/I
SM6T68CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
BAT54C-E3-08
BAT54C-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 30V SOT23
BAS40-05-E3-08
BAS40-05-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
BAS40-06-HE3-18
BAS40-06-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
MUR460-E3/73
MUR460-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 4A DO201AD
1N5245B-TR
1N5245B-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 500MW DO35
BZX55C8V2-TAP
BZX55C8V2-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 500MW DO35
BZX55C15-TR
BZX55C15-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 500MW DO35
BZX84C10-E3-08
BZX84C10-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23-3
BZX84C24-E3-18
BZX84C24-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 24V 300MW SOT23-3