1N4002GPE-E3/91
  • Share:

Vishay General Semiconductor - Diodes Division 1N4002GPE-E3/91

Manufacturer No:
1N4002GPE-E3/91
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 100V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002GPE-E3/91 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400xGP series, known for its high reliability and suitability for various consumer and industrial applications. The 'GP' suffix indicates a glass-passivated junction, which enhances the diode's performance and durability.

Key Specifications

Parameter Symbol 1N4002GPE-E3/91 Unit
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum RMS Voltage VRMS 70 V
Maximum DC Blocking Voltage VDC 100 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms sine-wave) IFSM 30 A
Non-repetitive Peak Forward Surge Current (square waveform, tp = 1 ms) IFSM 45 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 μA
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Package DO-41 (DO-204AL)

Key Features

  • Superectifier Structure: High reliability application due to the superectifier structure.
  • Glass-Passivated Junction: Cavity-free glass-passivated junction for enhanced performance and durability.
  • Low Forward Voltage Drop: Maximum instantaneous forward voltage of 1.1 V at 1.0 A.
  • Low Leakage Current: Typical reverse current less than 5.0 μA at rated DC blocking voltage.
  • High Forward Surge Capability: Peak forward surge current of 30 A for 8.3 ms sine-wave and 45 A for square waveform with tp = 1 ms.
  • Solderable Leads: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102.
  • RoHS-Compliant: Commercial grade, RoHS-compliant, and meets JESD 201 class 1A whisker test.

Applications

The 1N4002GPE-E3/91 is suitable for various applications, including:

  • General purpose rectification in power supplies.
  • Inverters and converters.
  • Freewheeling diodes.
  • Consumer and industrial electronics.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4002GPE-E3/91?

    The maximum repetitive peak reverse voltage is 100 V.

  2. What is the maximum average forward rectified current of the 1N4002GPE-E3/91?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current for an 8.3 ms sine-wave?

    The peak forward surge current for an 8.3 ms sine-wave is 30 A.

  4. What is the maximum instantaneous forward voltage at 1.0 A?

    The maximum instantaneous forward voltage at 1.0 A is 1.1 V.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -65 to +175 °C.

  6. Is the 1N4002GPE-E3/91 RoHS-compliant?
  7. What type of package does the 1N4002GPE-E3/91 come in?

    The 1N4002GPE-E3/91 comes in a DO-41 (DO-204AL) package.

  8. What are the typical applications of the 1N4002GPE-E3/91?

    The typical applications include general purpose rectification in power supplies, inverters, converters, and freewheeling diodes.

  9. What is the maximum DC reverse current at rated DC blocking voltage?

    The maximum DC reverse current at rated DC blocking voltage is 5.0 μA.

  10. Is the 1N4002GPE-E3/91 suitable for consumer applications?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
475

Please send RFQ , we will respond immediately.

Same Series
1N4001GP-E3/73
1N4001GP-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N4005GP-E3/54
1N4005GP-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4004GPE-E3/54
1N4004GPE-E3/54
DIODE GEN PURP 400V 1A DO204AL
1N4003GP-E3/54
1N4003GP-E3/54
DIODE GEN PURP 200V 1A DO204AL
1N5407GP-E3/54
1N5407GP-E3/54
DIODE GEN PURP 800V 3A DO201AD
1N4001GPE-E3/73
1N4001GPE-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N4001GPEHE3/73
1N4001GPEHE3/73
DIODE GEN PURP 50V 1A DO204AL
1N4001GPHE3/73
1N4001GPHE3/73
DIODE GEN PURP 50V 1A DO204AL
1N4002GPHE3/73
1N4002GPHE3/73
DIODE GEN PURP 100V 1A DO204AL
1N4004GPE-E3/73
1N4004GPE-E3/73
DIODE GEN PURP 400V 1A DO204AL
1N4006GPHE3/73
1N4006GPHE3/73
DIODE GEN PURP 800V 1A DO204AL
1N4002GPEHE3/54
1N4002GPEHE3/54
DIODE GEN PURP 100V 1A DO204AL

Similar Products

Part Number 1N4002GPE-E3/91 1N4002GPEHE3/91
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 100 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
NRVUS1MFA
NRVUS1MFA
onsemi
DIODE GEN PURP 1A1000V SOD123-2
BAS282-GS18
BAS282-GS18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 30MA SOD80
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41

Related Product By Brand

SM6T18CA-E3/52
SM6T18CA-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM6T18CA-M3/5B
SM6T18CA-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM6T27AHM3_A/I
SM6T27AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 23.1VWM 37.5VC DO214AA
SM15T200A-M3/57T
SM15T200A-M3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
SM15T100AHE3/57T
SM15T100AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AB
SM15T22CAHM3_A/I
SM15T22CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AB
SM15T220AHM3/I
SM15T220AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AB
BAV70-E3-18
BAV70-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 125MA SOT23
BYQ28EF-100-E3/45
BYQ28EF-100-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 100V 5A ITO220AB
BZX384C15-G3-08
BZX384C15-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 15V 200MW SOD323
BZX84C51-E3-18
BZX84C51-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3
BZX384C6V8-HE3-18
BZX384C6V8-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 200MW SOD323