1N4002GPE-E3/91
  • Share:

Vishay General Semiconductor - Diodes Division 1N4002GPE-E3/91

Manufacturer No:
1N4002GPE-E3/91
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 100V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002GPE-E3/91 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400xGP series, known for its high reliability and suitability for various consumer and industrial applications. The 'GP' suffix indicates a glass-passivated junction, which enhances the diode's performance and durability.

Key Specifications

Parameter Symbol 1N4002GPE-E3/91 Unit
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum RMS Voltage VRMS 70 V
Maximum DC Blocking Voltage VDC 100 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms sine-wave) IFSM 30 A
Non-repetitive Peak Forward Surge Current (square waveform, tp = 1 ms) IFSM 45 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 μA
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Package DO-41 (DO-204AL)

Key Features

  • Superectifier Structure: High reliability application due to the superectifier structure.
  • Glass-Passivated Junction: Cavity-free glass-passivated junction for enhanced performance and durability.
  • Low Forward Voltage Drop: Maximum instantaneous forward voltage of 1.1 V at 1.0 A.
  • Low Leakage Current: Typical reverse current less than 5.0 μA at rated DC blocking voltage.
  • High Forward Surge Capability: Peak forward surge current of 30 A for 8.3 ms sine-wave and 45 A for square waveform with tp = 1 ms.
  • Solderable Leads: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102.
  • RoHS-Compliant: Commercial grade, RoHS-compliant, and meets JESD 201 class 1A whisker test.

Applications

The 1N4002GPE-E3/91 is suitable for various applications, including:

  • General purpose rectification in power supplies.
  • Inverters and converters.
  • Freewheeling diodes.
  • Consumer and industrial electronics.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4002GPE-E3/91?

    The maximum repetitive peak reverse voltage is 100 V.

  2. What is the maximum average forward rectified current of the 1N4002GPE-E3/91?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current for an 8.3 ms sine-wave?

    The peak forward surge current for an 8.3 ms sine-wave is 30 A.

  4. What is the maximum instantaneous forward voltage at 1.0 A?

    The maximum instantaneous forward voltage at 1.0 A is 1.1 V.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -65 to +175 °C.

  6. Is the 1N4002GPE-E3/91 RoHS-compliant?
  7. What type of package does the 1N4002GPE-E3/91 come in?

    The 1N4002GPE-E3/91 comes in a DO-41 (DO-204AL) package.

  8. What are the typical applications of the 1N4002GPE-E3/91?

    The typical applications include general purpose rectification in power supplies, inverters, converters, and freewheeling diodes.

  9. What is the maximum DC reverse current at rated DC blocking voltage?

    The maximum DC reverse current at rated DC blocking voltage is 5.0 μA.

  10. Is the 1N4002GPE-E3/91 suitable for consumer applications?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
475

Please send RFQ , we will respond immediately.

Same Series
1N4007GPE-E3/73
1N4007GPE-E3/73
DIODE GEN PURP 1KV 1A DO204AL
1N5407GP-E3/54
1N5407GP-E3/54
DIODE GEN PURP 800V 3A DO201AD
1N4001GPHE3/73
1N4001GPHE3/73
DIODE GEN PURP 50V 1A DO204AL
1N4004GPEHE3/73
1N4004GPEHE3/73
DIODE GEN PURP 400V 1A DO204AL
1N4005GPE-E3/73
1N4005GPE-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4005GPHE3/73
1N4005GPHE3/73
DIODE GEN PURP 600V 1A DO204AL
1N4007GPEHE3/73
1N4007GPEHE3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4003GPHE3/54
1N4003GPHE3/54
DIODE GEN PURP 200V 1A DO204AL
1N4005GPEHE3/54
1N4005GPEHE3/54
DIODE GEN PURP 600V 1A DO204AL
1N4001GPEHE3/91
1N4001GPEHE3/91
DIODE GEN PURP 50V 1A DO204AL
1N4005GPEHE3/53
1N4005GPEHE3/53
DIODE GEN PURP 600V 1A DO204AL
1N4007GPE-E3/53
1N4007GPE-E3/53
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4002GPE-E3/91 1N4002GPEHE3/91
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 100 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

PMEG2010EA,115
PMEG2010EA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
FFSH15120A
FFSH15120A
onsemi
1200V 15A SIC SBD
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO

Related Product By Brand

SM15T30A-E3/9AT
SM15T30A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB
SM6T27A-E3/5B
SM6T27A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 23.1VWM 37.5VC DO214AA
SM6T33CAHM3_A/I
SM6T33CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM15T15AHM3_A/I
SM15T15AHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AB
SM15T68CAHM3/I
SM15T68CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
BAW56-E3-08
BAW56-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 250MA SOT23
1N4148W-E3-18
1N4148W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
1N4148WS-HE3-08
1N4148WS-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
BAS16D-HE3-08
BAS16D-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD123
1N4002GPHE3/54
1N4002GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
ZM4734A-GS18
ZM4734A-GS18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.6V 1W DO213AB
BZX384B3V0-G3-08
BZX384B3V0-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3V 200MW SOD323