1N4002GPE-E3/91
  • Share:

Vishay General Semiconductor - Diodes Division 1N4002GPE-E3/91

Manufacturer No:
1N4002GPE-E3/91
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 100V 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4002GPE-E3/91 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400xGP series, known for its high reliability and suitability for various consumer and industrial applications. The 'GP' suffix indicates a glass-passivated junction, which enhances the diode's performance and durability.

Key Specifications

Parameter Symbol 1N4002GPE-E3/91 Unit
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum RMS Voltage VRMS 70 V
Maximum DC Blocking Voltage VDC 100 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms sine-wave) IFSM 30 A
Non-repetitive Peak Forward Surge Current (square waveform, tp = 1 ms) IFSM 45 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 5.0 μA
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Package DO-41 (DO-204AL)

Key Features

  • Superectifier Structure: High reliability application due to the superectifier structure.
  • Glass-Passivated Junction: Cavity-free glass-passivated junction for enhanced performance and durability.
  • Low Forward Voltage Drop: Maximum instantaneous forward voltage of 1.1 V at 1.0 A.
  • Low Leakage Current: Typical reverse current less than 5.0 μA at rated DC blocking voltage.
  • High Forward Surge Capability: Peak forward surge current of 30 A for 8.3 ms sine-wave and 45 A for square waveform with tp = 1 ms.
  • Solderable Leads: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102.
  • RoHS-Compliant: Commercial grade, RoHS-compliant, and meets JESD 201 class 1A whisker test.

Applications

The 1N4002GPE-E3/91 is suitable for various applications, including:

  • General purpose rectification in power supplies.
  • Inverters and converters.
  • Freewheeling diodes.
  • Consumer and industrial electronics.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4002GPE-E3/91?

    The maximum repetitive peak reverse voltage is 100 V.

  2. What is the maximum average forward rectified current of the 1N4002GPE-E3/91?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current for an 8.3 ms sine-wave?

    The peak forward surge current for an 8.3 ms sine-wave is 30 A.

  4. What is the maximum instantaneous forward voltage at 1.0 A?

    The maximum instantaneous forward voltage at 1.0 A is 1.1 V.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -65 to +175 °C.

  6. Is the 1N4002GPE-E3/91 RoHS-compliant?
  7. What type of package does the 1N4002GPE-E3/91 come in?

    The 1N4002GPE-E3/91 comes in a DO-41 (DO-204AL) package.

  8. What are the typical applications of the 1N4002GPE-E3/91?

    The typical applications include general purpose rectification in power supplies, inverters, converters, and freewheeling diodes.

  9. What is the maximum DC reverse current at rated DC blocking voltage?

    The maximum DC reverse current at rated DC blocking voltage is 5.0 μA.

  10. Is the 1N4002GPE-E3/91 suitable for consumer applications?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
475

Please send RFQ , we will respond immediately.

Same Series
1N4001GP-E3/73
1N4001GP-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N4007GPE-E3/54
1N4007GPE-E3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4002GP-E3/54
1N4002GP-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4002GPE-E3/54
1N4002GPE-E3/54
DIODE GEN PURP 100V 1A DO204AL
1N4005GP-E3/73
1N4005GP-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4001GPE-E3/73
1N4001GPE-E3/73
DIODE GEN PURP 50V 1A DO204AL
1N4002GPE-E3/73
1N4002GPE-E3/73
DIODE GEN PURP 100V 1A DO204AL
1N4001GPEHE3/54
1N4001GPEHE3/54
DIODE GEN PURP 50V 1A DO204AL
1N4006GPHE3/54
1N4006GPHE3/54
DIODE GEN PURP 800V 1A DO204AL
1N4005GPEHE3/53
1N4005GPEHE3/53
DIODE GEN PURP 600V 1A DO204AL
1N4007GPE-E3/53
1N4007GPE-E3/53
DIODE GEN PURP 1KV 1A DO204AL
1N4001GPE-E3/91
1N4001GPE-E3/91
DIODE GEN PURP 50V 1A DO204AL

Similar Products

Part Number 1N4002GPE-E3/91 1N4002GPEHE3/91
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 100 V 5 µA @ 100 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
PMEG2020EH,115
PMEG2020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
MBRM120LT3
MBRM120LT3
onsemi
DIODE SCHOTTKY 1A 20V POWERMITE
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL

Related Product By Brand

SM6T39A-E3/52
SM6T39A-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T18CA-M3/5B
SM6T18CA-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM6T12A-E3/5B
SM6T12A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM6T220CAHM3_A/I
SM6T220CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM15T68A-E3/9AT
SM15T68A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM15T100CA-M3/9AT
SM15T100CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AB
SM6T68AHE3/52
SM6T68AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
BAT54-E3-18
BAT54-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOT23
BZX84C3V6-E3-08
BZX84C3V6-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.6V 300MW SOT23-3
BZX84C4V7-E3-18
BZX84C4V7-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 300MW SOT23-3
BZX84B12-E3-18
BZX84B12-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 12V 300MW SOT23-3
BZX84C22-G3-18
BZX84C22-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3