1N4007GPEHE3/73
  • Share:

Vishay General Semiconductor - Diodes Division 1N4007GPEHE3/73

Manufacturer No:
1N4007GPEHE3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Box (TB)
Description:
DIODE GEN PURP 1KV 1A DO204AL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007GPEHE3/73 is a general-purpose rectifier diode produced by Vishay General Semiconductor - Diodes Division. This diode is part of the 1N400x series, known for its high current capability and low forward voltage drop. It is widely used in various applications requiring reliable and efficient rectification.

Key Specifications

Parameter Value Unit
Maximum Repetitive Peak Reverse Voltage (VRRM) 1000 V
Maximum RMS Voltage (VRMS) 700 V
Maximum DC Blocking Voltage (VDC) 1000 V
Maximum Average Forward Rectified Current (IF(AV)) 1.0 A
Peak Forward Surge Current (IFSM) 30 A
Forward Voltage (VF) @ IF = 1.0A 1.1 V
Reverse Current (IR) @ Vr = 1000V 5.0 µA µA
Junction Capacitance (Cj) @ 4V, 1MHz 15 pF
Operating Temperature Range -50°C to 150°C °C
Package DO-204AL (DO-41), Axial
Mounting Type Through Hole

Key Features

  • High current capability with a maximum average forward rectified current of 1.0 A and a non-repetitive peak forward surge current of 30 A.
  • Low forward voltage drop of 1.1 V at 1 A.
  • Low reverse leakage current of 5.0 µA at 1000 V.
  • High peak repetitive reverse voltage of 1000 V.
  • Available in the DO-204AL (DO-41) axial package.
  • Operating temperature range from -50°C to 150°C.
  • Typical thermal resistance of 100 °C/W (junction to ambient).

Applications

  • General purpose rectification in power supplies, inverters, and converters.
  • Freewheeling diode applications.
  • Prevention of reverse polarity problems.
  • Half-wave and full-wave rectifiers.
  • Protection devices in various electronic circuits.
  • Current flow regulators.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4007GPEHE3/73 diode?

    The maximum repetitive peak reverse voltage is 1000 V.

  2. What is the maximum average forward rectified current of the 1N4007GPEHE3/73 diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the forward voltage drop of the 1N4007GPEHE3/73 diode at 1 A?

    The forward voltage drop is 1.1 V at 1 A.

  4. What is the reverse leakage current of the 1N4007GPEHE3/73 diode at 1000 V?

    The reverse leakage current is 5.0 µA at 1000 V.

  5. What is the peak forward surge current of the 1N4007GPEHE3/73 diode?

    The peak forward surge current is 30 A.

  6. What is the operating temperature range of the 1N4007GPEHE3/73 diode?

    The operating temperature range is from -50°C to 150°C.

  7. What package type is the 1N4007GPEHE3/73 diode available in?

    The diode is available in the DO-204AL (DO-41) axial package.

  8. What is the typical thermal resistance of the 1N4007GPEHE3/73 diode?

    The typical thermal resistance is 100 °C/W (junction to ambient).

  9. What are some common applications of the 1N4007GPEHE3/73 diode?

    Common applications include general purpose rectification, freewheeling diodes, prevention of reverse polarity problems, half-wave and full-wave rectifiers, and protection devices.

  10. Is the 1N4007GPEHE3/73 diode RoHS compliant?

    Yes, the 1N4007GPEHE3/73 diode is RoHS compliant.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
600

Please send RFQ , we will respond immediately.

Same Series
1N4005GP-E3/54
1N4005GP-E3/54
DIODE GEN PURP 600V 1A DO204AL
1N4005GP-E3/73
1N4005GP-E3/73
DIODE GEN PURP 600V 1A DO204AL
1N4002GPE-E3/73
1N4002GPE-E3/73
DIODE GEN PURP 100V 1A DO204AL
1N4003GPHE3/73
1N4003GPHE3/73
DIODE GEN PURP 200V 1A DO204AL
1N4004GP-E3/73
1N4004GP-E3/73
DIODE GEN PURP 400V 1A DO204AL
1N4005GPEHE3/73
1N4005GPEHE3/73
DIODE GEN PURP 600V 1A DO204AL
1N4007GPEHE3/73
1N4007GPEHE3/73
DIODE GEN PURP 1KV 1A DO204AL
1N4003GPHE3/54
1N4003GPHE3/54
DIODE GEN PURP 200V 1A DO204AL
1N4007GPEHE3/54
1N4007GPEHE3/54
DIODE GEN PURP 1KV 1A DO204AL
1N4003GPEHE3/53
1N4003GPEHE3/53
DIODE GEN PURP 200V 1A DO204AL
1N4004GPEHE3/93
1N4004GPEHE3/93
DIODE GEN PURP 400V 1A DO204AL
1N4007GPE-E3/53
1N4007GPE-E3/53
DIODE GEN PURP 1KV 1A DO204AL

Similar Products

Part Number 1N4007GPEHE3/73 1N4007GPHE3/73 1N4007GPE-E3/73 1N4007GPEHE3/53
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Active Obsolete
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41) DO-204AL (DO-41)
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
BAS21Q-13-F
BAS21Q-13-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
PMEG3020EP,115
PMEG3020EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 2A CFP5
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

SM15T100A-E3/57T
SM15T100A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AB
SM6T68A-E3/5B
SM6T68A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
SM6T24CA-M3/5B
SM6T24CA-M3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AA
SM15T100CA-M3/9AT
SM15T100CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AB
SM15T36CAHE3/9AT
SM15T36CAHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AB
SM15T7V5AHM3/I
SM15T7V5AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 6.4VWM 11.3VC DO214AB
SM6T22CAHM3/I
SM6T22CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 18.8VWM 30.6VC DO214AA
1N4001GPEHE3/73
1N4001GPEHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N4002GPEHE3/73
1N4002GPEHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
BZX55C8V2-TAP
BZX55C8V2-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 500MW DO35
BZX384C2V4-E3-08
BZX384C2V4-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 200MW SOD323
BZX84C8V2-HE3-18
BZX84C8V2-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 300MW SOT23-3