Overview
The MBRB10100CT-E3/8W is a high-performance Schottky rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is part of the MBR10xxx series, which utilizes Trench MOS Schottky technology to achieve lower power losses and high efficiency. The diode is available in the TO-263AB (D2PAK) package and is designed for various high-power applications requiring reliable and efficient rectification.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 100 | V |
| Working Peak Reverse Voltage | VRWM | 100 | V |
| Maximum DC Blocking Voltage | VDC | 100 | V |
| Maximum Average Forward Rectified Current (per diode) | IF(AV) | 5.0 | A |
| Peak Forward Surge Current (8.3 ms single half sine-wave) | IFSM | 120 | A |
| Non-repetitive Avalanche Energy (per diode) | EAS | 60 | mJ |
| Peak Repetitive Reverse Current (per diode) | IRRM | 0.5 | A |
| Maximum Instantaneous Forward Voltage (per diode at IF = 5.0 A, TC = 125 °C) | VF | 0.75 | V |
| Typical Thermal Resistance (Junction to Case) | RθJC | 4.4 | °C/W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -65 to +150 | °C |
Key Features
- Trench MOS Schottky technology for lower power losses and high efficiency.
- Low forward voltage drop, typically 0.75 V at 5.0 A and 125 °C.
- High forward surge capability, up to 120 A for 8.3 ms single half sine-wave.
- High thermal stability with a typical thermal resistance of 4.4 °C/W (Junction to Case).
- Wide operating junction and storage temperature range from -65 °C to +150 °C.
Applications
The MBRB10100CT-E3/8W is suitable for a variety of high-power applications, including:
- Power supplies and DC-DC converters.
- Motor control and drives.
- High-frequency switching applications.
- Automotive systems requiring high reliability and efficiency.
- Industrial power systems and renewable energy systems.
Q & A
- What is the peak repetitive reverse voltage of the MBRB10100CT-E3/8W?
The peak repetitive reverse voltage is 100 V.
- What is the maximum average forward rectified current per diode?
The maximum average forward rectified current per diode is 5.0 A.
- What is the typical thermal resistance from junction to case?
The typical thermal resistance from junction to case is 4.4 °C/W.
- What is the maximum instantaneous forward voltage at 5.0 A and 125 °C?
The maximum instantaneous forward voltage at 5.0 A and 125 °C is 0.75 V.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is from -65 °C to +150 °C.
- What package type is the MBRB10100CT-E3/8W available in?
The MBRB10100CT-E3/8W is available in the TO-263AB (D2PAK) package.
- What is the non-repetitive avalanche energy per diode?
The non-repetitive avalanche energy per diode is 60 mJ.
- What is the peak forward surge current for an 8.3 ms single half sine-wave?
The peak forward surge current for an 8.3 ms single half sine-wave is 120 A.
- What are some common applications for this diode?
Common applications include power supplies, motor control, high-frequency switching, automotive systems, and industrial power systems.
- What technology does this diode use?
This diode uses Trench MOS Schottky technology.
