MBRB10100CT-M3/8W
  • Share:

Vishay General Semiconductor - Diodes Division MBRB10100CT-M3/8W

Manufacturer No:
MBRB10100CT-M3/8W
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 90V 10A TO263AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBRB10100CT-M3/8W is a high-voltage, trench MOS barrier Schottky (TMBS) rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-efficiency and low power loss applications, making it suitable for various power management and rectification needs. The device is packaged in the D2PAK (TO-263AB) format, which is widely used in industrial and automotive applications due to its robust thermal performance and compact size.

Key Specifications

Parameter Symbol Value Unit
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Working Peak Reverse Voltage VRWM 100 V
Maximum DC Blocking Voltage VDC 100 V
Maximum Average Forward Rectified Current at TC = 133 °C IF(AV) 10 A
Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A
Maximum Instantaneous Forward Voltage at IF = 10 A, TC = 25 °C VF 0.80 V
Maximum Reverse Current at Working Peak Reverse Voltage, TJ = 25 °C IR 100 μA
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +150 °C
Typical Thermal Resistance, Junction to Ambient RθJA 60 °C/W
Typical Thermal Resistance, Junction to Case RθJC 2.0 °C/W

Key Features

  • High Efficiency: The MBRB10100CT-M3/8W features low forward voltage drop, contributing to high efficiency and reduced power loss.
  • High Voltage Capability: With a maximum repetitive peak reverse voltage of 100 V, this rectifier is suitable for high-voltage applications.
  • Robust Thermal Performance: The D2PAK package provides good thermal dissipation, making it suitable for applications requiring high current handling.
  • Low Leakage Current: The device has a low reverse current, which is beneficial for reducing standby power consumption.
  • Environmental Compliance: The component is RoHS-compliant and meets various environmental standards, ensuring it is suitable for use in a wide range of applications.

Applications

  • Power Supplies: Suitable for use in switching power supplies, DC-DC converters, and other power management systems.
  • Automotive Systems: Can be used in automotive applications due to its robust thermal performance and high reliability.
  • Industrial Equipment: Applicable in various industrial equipment where high-efficiency rectification is required.
  • Motor Control: Used in motor control circuits and other high-current applications.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MBRB10100CT-M3/8W?

    The maximum repetitive peak reverse voltage is 100 V.

  2. What is the maximum average forward rectified current at TC = 133 °C?

    The maximum average forward rectified current is 10 A.

  3. What is the peak forward surge current rating?

    The peak forward surge current rating is 150 A for an 8.3 ms single half sine-wave superimposed on rated load.

  4. What is the typical thermal resistance from junction to ambient?

    The typical thermal resistance from junction to ambient (RθJA) is 60 °C/W.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -65 to +150 °C.

  6. Is the MBRB10100CT-M3/8W RoHS-compliant?

    Yes, the component is RoHS-compliant.

  7. What package type is used for the MBRB10100CT-M3/8W?

    The component is packaged in the D2PAK (TO-263AB) format.

  8. What is the maximum instantaneous forward voltage at IF = 10 A and TC = 25 °C?

    The maximum instantaneous forward voltage is 0.80 V.

  9. What are the typical applications for the MBRB10100CT-M3/8W?

    Typical applications include power supplies, automotive systems, industrial equipment, and motor control circuits.

  10. What is the weight of the D2PAK package?

    The weight of the D2PAK package is approximately 1.384 grams.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):90 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:800 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Operating Temperature - Junction:-65°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB (D²PAK)
0 Remaining View Similar

In Stock

$0.74
1,138

Please send RFQ , we will respond immediately.

Same Series
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E20/AA
DD26S200E20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V50/AA
DD26S2S50V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
DD44S32S50TX/AA
DD44S32S50TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MBRB10100CT-M3/8W MBRB20100CT-M3/8W MBRB10100CT-E3/8W MBRB10100CT-M3/4W
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 90 V 100 V 100 V 90 V
Current - Average Rectified (Io) (per Diode) 10A 10A 5A 10A
Voltage - Forward (Vf) (Max) @ If 800 mV @ 10 A 800 mV @ 10 A 850 mV @ 5 A 800 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 100 µA @ 100 V 100 µA @ 100 V 100 µA @ 100 V 100 µA @ 100 V
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB (D²PAK) TO-263AB (D²PAK) TO-263AB (D²PAK) TO-263AB (D²PAK)

Related Product By Categories

BAW56WT1G
BAW56WT1G
onsemi
DIODE ARRAY GP 70V 200MA SC70-3
STTH1002CGY-TR
STTH1002CGY-TR
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
MBRD640CTT4G
MBRD640CTT4G
onsemi
DIODE ARRAY SCHOTTKY 40V 3A DPAK
STPS30L60CW
STPS30L60CW
STMicroelectronics
DIODE ARRAY SCHOTTKY 60V TO247-3
BYQ28EB-150HE3_A/P
BYQ28EB-150HE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 150V 5A TO263AB
BAT54C-F2-0000HF
BAT54C-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 30V 0.2A SOT-23-3
BAS 40-07 B6327
BAS 40-07 B6327
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT143
BAS7006WE6327HTSA1
BAS7006WE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
MBRB2545CTG
MBRB2545CTG
onsemi
DIODE ARRAY SCHOTTKY 45V D2PAK
BAW56SH6727XTSA1
BAW56SH6727XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS21UE6359HTMA1
BAS21UE6359HTMA1
Infineon Technologies
DIODE GP 200V 125MA SC74
BAV99W/DG/B3F
BAV99W/DG/B3F
Nexperia USA Inc.
DIODE ARRAY GP 100V 150MA SC70

Related Product By Brand

SM6T150AHM3_A/H
SM6T150AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM6T39CAHE3_A/I
SM6T39CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
SM6T100CAHE3_A/I
SM6T100CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AA
SM6T36AHE3/5B
SM6T36AHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 30.8VWM 49.9VC DO214AA
SM15T18AHM3/H
SM15T18AHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AB
BAT54S-E3-08
BAT54S-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 30V SOT23
BYQ28EF-150-E3/45
BYQ28EF-150-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 150V 5A ITO220AB
BAS86-M-08
BAS86-M-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
MURS260-M3/52T
MURS260-M3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
1N4004GPEHE3/93
1N4004GPEHE3/93
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
BZX55C3V3-TAP
BZX55C3V3-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 500MW DO35
BZX84C43-G3-08
BZX84C43-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 43V 300MW SOT23-3