MBR10100CT-E3/4W
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Vishay General Semiconductor - Diodes Division MBR10100CT-E3/4W

Manufacturer No:
MBR10100CT-E3/4W
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE ARRAY SCHOTTKY 100V TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR10100CT-E3/4W is a high-performance Schottky rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component utilizes Trench MOS Schottky technology, which offers lower power losses and high efficiency. It is designed for applications requiring low forward voltage drop and high forward surge capability. The diode is packaged in a TO-220AB case, which meets UL 94 V-0 flammability rating, and is RoHS compliant, making it suitable for a wide range of industrial and commercial applications.

Key Specifications

Parameter Symbol Max. Unit
Repetitive Reverse Voltage (Vrrm) Vrrm 100 V
Forward Current (If(AV)) If(AV) 10 A
Diode Configuration - Single
Diode Case Style - TO-220AB
No. of Pins - 2 Pins
Forward Voltage (VF Max) VF 0.85 V
Forward Surge Current (Ifsm Max) Ifsm 150 A
Operating Temperature Max Tj 150 °C
Operating Temperature Range Tj, TSTG -65 °C to +150 °C
Termination Type - Through Hole
Time on for IFSM - 8.3 ms
Typical Thermal Resistance (RθJC) RθJC 4.4 °C/W

Key Features

  • Trench MOS Schottky technology for lower power losses and high efficiency.
  • Low forward voltage drop (VF Max: 0.85 V).
  • High forward surge capability (Ifsm Max: 150 A).
  • Wide operating temperature range (-65 °C to +150 °C).
  • RoHS compliant and meets UL 94 V-0 flammability rating.
  • Available in TO-220AB package.

Applications

The MBR10100CT-E3/4W Schottky rectifier is suitable for various applications including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial and commercial power systems.
  • Automotive systems requiring high reliability and efficiency.
  • High-frequency switching applications.

Q & A

  1. What is the repetitive reverse voltage (Vrrm) of the MBR10100CT-E3/4W?

    The repetitive reverse voltage (Vrrm) is 100 V.

  2. What is the maximum forward current (If(AV)) of this diode?

    The maximum forward current (If(AV)) is 10 A.

  3. What is the forward voltage drop (VF Max) of the MBR10100CT-E3/4W?

    The forward voltage drop (VF Max) is 0.85 V.

  4. What is the maximum operating temperature of this diode?

    The maximum operating temperature is 150 °C.

  5. Is the MBR10100CT-E3/4W RoHS compliant?
  6. What is the typical thermal resistance (RθJC) of this diode?

    The typical thermal resistance (RθJC) is 4.4 °C/W.

  7. What is the maximum forward surge current (Ifsm Max) of the MBR10100CT-E3/4W?

    The maximum forward surge current (Ifsm Max) is 150 A.

  8. What is the time duration for the maximum forward surge current (Ifsm)?

    The time duration for the maximum forward surge current (Ifsm) is 8.3 ms.

  9. In what package is the MBR10100CT-E3/4W available?

    The MBR10100CT-E3/4W is available in the TO-220AB package.

  10. What are some common applications for the MBR10100CT-E3/4W?

    Common applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching applications.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):5A
Voltage - Forward (Vf) (Max) @ If:850 mV @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Operating Temperature - Junction:-65°C ~ 150°C
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
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Similar Products

Part Number MBR10100CT-E3/4W MBR10100CT-M3/4W MBR10H100CT-E3/4W MBR10100CT-E3/45
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Obsolete Obsolete
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 100 V
Current - Average Rectified (Io) (per Diode) 5A 5A 5A 5A
Voltage - Forward (Vf) (Max) @ If 850 mV @ 5 A 850 mV @ 5 A 760 mV @ 5 A 850 mV @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 100 µA @ 100 V 100 µA @ 100 V 3.5 µA @ 100 V 100 µA @ 100 V
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 150°C
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3

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