Overview
The MBR10100CT-E3/45 is a high-performance Schottky rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is part of the MBR10 series and is designed to offer low power losses and high efficiency, making it suitable for various industrial and automotive applications. The diode features Trench MOS Schottky technology, which enhances its switching performance and reduces forward voltage drop.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | 100 | V |
| Working Peak Reverse Voltage | VRWM | 100 | V |
| Maximum DC Blocking Voltage | VDC | 100 | V |
| Maximum Average Forward Rectified Current at TC = 133 °C | IF(AV) | 10 | A |
| Peak Forward Surge Current (8.3 ms single half sine-wave) | IFSM | 150 | A |
| Non-repetitive Avalanche Energy at TJ = 25 °C, L = 60 mH | EAS | 130 | mJ |
| Peak Repetitive Reverse Current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C | IRRM | 0.5 | A |
| Voltage Rate of Change (rated VR) | dV/dt | 10,000 | V/μs |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -65 to +150 | °C |
| Maximum Instantaneous Forward Voltage at IF = 5.0 A, TC = 25 °C | VF | 0.75 | V |
| Typical Thermal Resistance per Diode | RθJC | 4.4 | °C/W |
| Package | TO-220AC | ||
| No. of Pins | 2 Pins (2+Tab) |
Key Features
- Trench MOS Schottky Technology: Enhances switching performance and reduces forward voltage drop.
- Low Power Losses: High efficiency due to low forward voltage drop.
- High Forward Surge Capability: Can handle peak forward surge currents up to 150 A.
- Guardring for Overvoltage Protection: Provides additional protection against overvoltage conditions.
- Low Leakage Current: Minimizes power loss and improves overall system efficiency.
- Wide Operating Temperature Range: Operates from -65 °C to +150 °C, making it suitable for various environments.
Applications
- Industrial Applications: Suitable for high-power industrial systems requiring efficient rectification.
- Automotive Systems: Used in automotive applications where high reliability and efficiency are critical.
- Power Supplies: Ideal for use in power supply units where low forward voltage drop and high efficiency are essential.
- Motor Control and Drives: Used in motor control and drive systems to ensure efficient and reliable operation.
- Consumer Electronics: Can be used in various consumer electronic devices requiring efficient power management.
Q & A
- What is the maximum repetitive peak reverse voltage of the MBR10100CT-E3/45?
The maximum repetitive peak reverse voltage is 100 V.
- What is the maximum average forward rectified current at TC = 133 °C?
The maximum average forward rectified current is 10 A.
- What is the peak forward surge current capability of this diode?
The diode can handle a peak forward surge current of up to 150 A for 8.3 ms single half sine-wave.
- What is the typical thermal resistance per diode?
The typical thermal resistance per diode is 4.4 °C/W.
- What is the operating temperature range of the MBR10100CT-E3/45?
The operating temperature range is from -65 °C to +150 °C.
- What type of package does the MBR10100CT-E3/45 come in?
The diode comes in a TO-220AC package.
- What are the key features of the Trench MOS Schottky technology used in this diode?
The Trench MOS Schottky technology enhances switching performance and reduces forward voltage drop, leading to lower power losses and higher efficiency.
- Is the MBR10100CT-E3/45 suitable for automotive applications?
Yes, it is suitable for automotive applications due to its high reliability and efficiency.
- What is the maximum instantaneous forward voltage at IF = 5.0 A and TC = 25 °C?
The maximum instantaneous forward voltage is 0.75 V.
- What is the non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH?
The non-repetitive avalanche energy is 130 mJ.
