Overview
The MBR10100CT-M3/4W is a high-voltage, dual Trench MOS Barrier Schottky (TMBS®) rectifier produced by Vishay General Semiconductor - Diodes Division. This component is designed for high-performance applications requiring low forward voltage drop and high efficiency. It features a common cathode configuration and is packaged in the TO-220AB case, making it suitable for a variety of industrial and automotive applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM | 100 | V |
| Maximum DC Blocking Voltage | VDC | 100 | V |
| Maximum Average Forward Rectified Current per Diode at TC = 105 °C | IF(AV) | 5.0 | A |
| Peak Forward Surge Current (8.3 ms single half sine-wave superimposed on rated load per diode) | IFSM | 120 | A |
| Voltage Rate of Change (rated VR) | dV/dt | 10,000 | V/μs |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -65 to +150 | °C |
| Maximum Instantaneous Forward Voltage at IF = 5.0 A, TA = 25 °C | VF | 0.85 | V |
| Maximum Reverse Current per Diode at Working Peak Reverse Voltage, TJ = 25 °C | IR | 100 μA | |
| Package | TO-220AB | ||
| Diode Configuration | 1 Pair Common Cathode |
Key Features
- High Voltage Capability: The MBR10100CT-M3/4W offers a maximum repetitive peak reverse voltage of 100 V, making it suitable for high-voltage applications.
- Low Forward Voltage Drop: With a maximum instantaneous forward voltage of 0.85 V at 5.0 A, this rectifier minimizes power losses and enhances efficiency.
- High Surge Current Capability: The component can handle a peak forward surge current of 120 A for 8.3 ms, ensuring robust performance under transient conditions.
- Wide Operating Temperature Range: The rectifier operates within a junction and storage temperature range of -65 °C to +150 °C, making it versatile for various environments.
- Halogen-Free and RoHS-Compliant: The M3 suffix indicates that the component is halogen-free, RoHS-compliant, and meets JESD 201 class 1A whisker test standards.
- High Reliability: The TO-220AB package with matte tin plated leads ensures high reliability and ease of soldering.
Applications
- Industrial Power Supplies: Suitable for use in high-power industrial applications where high efficiency and reliability are crucial.
- Automotive Systems: Ideal for automotive systems requiring high-voltage rectification and low forward voltage drop.
- Power Conversion Systems: Used in various power conversion systems, including DC-DC converters and AC-DC power supplies.
- Motor Control and Drives: Applicable in motor control and drive systems where high surge current capability is necessary.
Q & A
- What is the maximum repetitive peak reverse voltage of the MBR10100CT-M3/4W?
The maximum repetitive peak reverse voltage is 100 V.
- What is the maximum average forward rectified current per diode at TC = 105 °C?
The maximum average forward rectified current per diode is 5.0 A.
- What is the peak forward surge current capability of the MBR10100CT-M3/4W?
The peak forward surge current is 120 A for 8.3 ms.
- What is the operating junction and storage temperature range of the MBR10100CT-M3/4W?
The operating junction and storage temperature range is -65 °C to +150 °C.
- What is the maximum instantaneous forward voltage at IF = 5.0 A and TA = 25 °C?
The maximum instantaneous forward voltage is 0.85 V.
- Is the MBR10100CT-M3/4W RoHS-compliant and halogen-free?
Yes, the M3 suffix indicates that the component is RoHS-compliant and halogen-free.
- What is the package type of the MBR10100CT-M3/4W?
The package type is TO-220AB.
- What is the diode configuration of the MBR10100CT-M3/4W?
The diode configuration is 1 pair common cathode.
- What are some typical applications of the MBR10100CT-M3/4W?
Typical applications include industrial power supplies, automotive systems, power conversion systems, and motor control and drives.
- What is the voltage rate of change (dV/dt) of the MBR10100CT-M3/4W?
The voltage rate of change is 10,000 V/μs.
