BAT54SW RVG
  • Share:

Taiwan Semiconductor Corporation BAT54SW RVG

Manufacturer No:
BAT54SW RVG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 30V 200MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT54SW RVG, produced by Taiwan Semiconductor Corporation, is a 200mA, 30V Schottky Barrier Diode. This component is part of the BAT54 series and is known for its fast switching speed and low forward voltage drop. It is packaged in a SOT-23 (or SOT323 for some variants) surface mount device, making it suitable for a variety of applications requiring high efficiency and reliability.

Key Specifications

Parameter Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 30 V
Forward Continuous Current IF 200 mA
Repetitive Peak Forward Current (tp ≤ 1s; δ ≤ 0.5) IFRM 300 mA
Non-Repetitive Peak Forward Surge Current @ t < 1.0s IFSM 600 mA
Junction Temperature Range TJ -55 to +125 °C
Storage Temperature Range TSTG -55 to +125 °C
Forward Voltage @ IF = 100mA VF 1.00 V
Reverse Current @ VR = 25V IR 2.0 μA
Junction Capacitance @ f = 1MHz, VR = 1V CJ 10 pF
Reverse Recovery Time tRR 5.0 ns
Package SOT-23 (SOT323)

Key Features

  • Fast Switching Speed: The BAT54SW RVG is designed for fast switching applications, making it ideal for high-frequency circuits.
  • Low Forward Voltage Drop: With a forward voltage drop as low as 1V at 100mA, this diode minimizes power loss in the circuit.
  • Surface Mount Package: The SOT-23 package is ultra-small and suitable for surface mount technology, enhancing board space efficiency.
  • RoHS Compliant and Halogen-Free: The device is fully RoHS compliant and halogen-free, adhering to environmental standards.
  • PN Junction Guard Ring for Transient and ESD Protection: This feature enhances the diode's robustness against transient and electrostatic discharge (ESD) events.
  • Moisture Sensitivity Level 1: The device meets J-STD-020 level 1, indicating low moisture sensitivity.

Applications

  • Switching Power Supplies (SMPS): The BAT54SW RVG is commonly used in switching power supplies due to its fast switching and low forward voltage characteristics.
  • DC-DC Converters: It is suitable for DC-DC converter applications where high efficiency and fast switching are required.
  • Freewheeling Diodes: The diode's fast recovery time makes it ideal for freewheeling applications in power circuits.
  • Reverse Polarity Protections: It can be used to protect against reverse polarity conditions in various electronic circuits.
  • Blocking Diodes: The BAT54SW RVG can serve as a blocking diode in circuits where it is necessary to prevent backflow of current.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BAT54SW RVG?

    The maximum repetitive peak reverse voltage is 30V.

  2. What is the forward continuous current rating of the BAT54SW RVG?

    The forward continuous current rating is 200mA.

  3. What is the non-repetitive peak forward surge current rating of the BAT54SW RVG?

    The non-repetitive peak forward surge current rating is 600mA for t < 1.0s.

  4. What is the junction temperature range of the BAT54SW RVG?

    The junction temperature range is -55°C to +125°C.

  5. Is the BAT54SW RVG RoHS compliant?

    Yes, the BAT54SW RVG is fully RoHS compliant and halogen-free.

  6. What is the typical forward voltage drop at 100mA for the BAT54SW RVG?

    The typical forward voltage drop at 100mA is 1.00V.

  7. What is the reverse recovery time of the BAT54SW RVG?

    The reverse recovery time is 5.0ns.

  8. What package type is the BAT54SW RVG available in?

    The BAT54SW RVG is available in the SOT-23 (SOT323) package.

  9. What are some common applications of the BAT54SW RVG?

    Common applications include switching power supplies, DC-DC converters, freewheeling diodes, reverse polarity protections, and blocking diodes.

  10. Is the BAT54SW RVG suitable for high-frequency circuits?

    Yes, the BAT54SW RVG is designed for fast switching and is suitable for high-frequency circuits.

Product Attributes

Diode Configuration:1 Pair Series Connection
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Operating Temperature - Junction:125°C (Max)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
0 Remaining View Similar

In Stock

-
156

Please send RFQ , we will respond immediately.

Same Series
BAT54AW RVG
BAT54AW RVG
DIODE SCHOTTKY 30V 200MA SOT323
BAT54CW RVG
BAT54CW RVG
DIODE SCHOTTKY 30V 200MA SOT323
BAT54SW RVG
BAT54SW RVG
DIODE SCHOTTKY 30V 200MA SOT323

Related Product By Categories

BAT54CLT3G
BAT54CLT3G
onsemi
DIODE ARRAY SCHOTTKY 30V SOT23-3
BAW56-HF
BAW56-HF
Comchip Technology
DIODE SWITCHING COMMON ANODE 70V
BAV23CQ-7-F
BAV23CQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAS21S RFG
BAS21S RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 250V 200MA SOT23
BAS40-05E6327
BAS40-05E6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
MURB1620CT
MURB1620CT
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 8A D2PAK
BAV199DW-7
BAV199DW-7
Diodes Incorporated
DIODE ARRAY GP 85V 140MA SOT363
BAV70DXV6T5
BAV70DXV6T5
onsemi
DIODE ARRAY GP 100V 200MA SOT563
BAV99WE6433BTMA1
BAV99WE6433BTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAS 40-05 B5003
BAS 40-05 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
MBR1545CTH
MBR1545CTH
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 45V TO220AB
BAW56W/DG/B3X
BAW56W/DG/B3X
Nexperia USA Inc.
DIODE SWITCHING SOT363

Related Product By Brand

BAV70 RFG
BAV70 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 200MA SOT23
BAT54BR-G REG
BAT54BR-G REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363
1N914BWS RRG
1N914BWS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD323
MUR420SHM6G
MUR420SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
BAT43-L0 R0
BAT43-L0 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
1N4004GA0
1N4004GA0
Taiwan Semiconductor Corporation
1A,400V,STD.GLASS PASSIVATED REC
MUR460S M6
MUR460S M6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
BZX84C11 RFG
BZX84C11 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 11V 300MW SOT23
BZX84C30 RFG
BZX84C30 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 30V 300MW SOT23
BZX55C13 A0G
BZX55C13 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW DO35
BC846B RFG
BC846B RFG
Taiwan Semiconductor Corporation
TRANS NPN 65V 0.1A SOT23
BC817-16 RFG
BC817-16 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23