MUR420HB0G
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Taiwan Semiconductor Corporation MUR420HB0G

Manufacturer No:
MUR420HB0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Bulk
Description:
DIODE GEN PURP 200V 4A DO201AD
Delivery:
Payment:
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Product Introduction

Overview

The MUR420HB0G is a high-performance rectifier diode produced by Taiwan Semiconductor Corporation. This component is designed to meet the demands of various power management and electronic systems, offering high reliability, low leakage, and ultrafast switching speeds. It is particularly suited for applications requiring high current capability and good surge handling.

Key Specifications

ParameterValueUnits
Maximum Recurrent Peak Reverse Voltage (VRRM)400V
Maximum RMS Voltage (VRMS)280V
Maximum DC Blocking Voltage (VDC)400V
Maximum Average Forward Rectified Current (IF(AV)) at TA=55°C4.0A
Peak Forward Surge Current (IFSM)120A
Maximum Reverse Recovery Time (trr)0.89 nsns
Maximum Instantaneous Forward Voltage (VF) at 4.0A DC1.28 VV
Operating and Storage Temperature Range-55 to +150°C
Package TypeDO-201AD

Key Features

  • High reliability
  • Low leakage current
  • Low forward voltage drop
  • High current capability up to 4A
  • Ultrafast switching speed with a maximum reverse recovery time of 0.89 ns
  • High surge capability
  • Good for switching mode circuits
  • Compliant with ROHS standards and 100% Sn plating (Pb-free)
  • Molded plastic case with UL flammability classification 94V-O

Applications

The MUR420HB0G diode is suitable for a variety of applications, including:

  • Power management systems
  • Switching mode power supplies
  • High-frequency inverters
  • Automotive electronics
  • Industrial power systems

Q & A

  1. What is the maximum recurrent peak reverse voltage of the MUR420HB0G diode?
    The maximum recurrent peak reverse voltage is 400V.
  2. What is the maximum average forward rectified current of the MUR420HB0G diode at 55°C?
    The maximum average forward rectified current is 4.0A.
  3. What is the package type of the MUR420HB0G diode?
    The package type is DO-201AD.
  4. Is the MUR420HB0G diode ROHS compliant?
    Yes, it is ROHS compliant and has 100% Sn plating (Pb-free).
  5. What is the maximum reverse recovery time of the MUR420HB0G diode?
    The maximum reverse recovery time is 0.89 ns.
  6. What are the typical applications of the MUR420HB0G diode?
    Typical applications include power management systems, switching mode power supplies, high-frequency inverters, automotive electronics, and industrial power systems.
  7. What is the operating and storage temperature range of the MUR420HB0G diode?
    The operating and storage temperature range is -55 to +150°C.
  8. What is the maximum instantaneous forward voltage of the MUR420HB0G diode at 4.0A DC?
    The maximum instantaneous forward voltage is 1.28V.
  9. Does the MUR420HB0G diode have high surge capability?
    Yes, it has high surge capability.
  10. What is the case material of the MUR420HB0G diode?
    The case is made of molded plastic with UL flammability classification 94V-O.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:890 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:5 µA @ 200 V
Capacitance @ Vr, F:65pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number MUR420HB0G MUR440HB0G MUR460HB0G MUR4L20HB0G MUR420 B0G MUR420HA0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 600 V 200 V 200 V 200 V
Current - Average Rectified (Io) 4A 4A 4A 4A 4A 4A
Voltage - Forward (Vf) (Max) @ If 890 mV @ 4 A 1.28 V @ 4 A 1.28 V @ 4 A 890 mV @ 4 A 890 mV @ 4 A 890 mV @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 50 ns 50 ns 25 ns 25 ns 25 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V 10 µA @ 400 V 10 µA @ 600 V 5 µA @ 200 V 5 µA @ 200 V 5 µA @ 200 V
Capacitance @ Vr, F 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz 65pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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