BZX79B5V6 A0G
  • Share:

Taiwan Semiconductor Corporation BZX79B5V6 A0G

Manufacturer No:
BZX79B5V6 A0G
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Box (TB)
Description:
DIODE ZENER 5.6V 500MW DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BZX79B5V6 A0G is a 5.6V Zener diode produced by Taiwan Semiconductor Corporation. This component is part of the BZX79B series, which offers a range of Zener voltages. The BZX79B5V6 A0G is designed for voltage regulation and is suitable for various electronic applications requiring stable voltage reference points.

Key Specifications

ParameterMin.Typ.Max.
Zener Voltage (VZ) at IZT5.49 V5.60 V5.71 V
Test Current (IZT)5 mA
Power Dissipation (Pd)500 mW
Zener Impedance (ZZT) at IZT40 Ω
Leakage Current (IZK)1.0 μA
Package TypeDO-35 (Through Hole)
Tolerance±2%

Key Features

  • Stable Zener voltage of 5.6V with ±2% tolerance.
  • High power dissipation of 500 mW.
  • Low Zener impedance (ZZT) of 40 Ω at IZT.
  • Low leakage current (IZK) of 1.0 μA.
  • Through-hole package (DO-35) for easy mounting.
  • Green compound for environmental compliance.

Applications

The BZX79B5V6 A0G Zener diode is suitable for a variety of applications, including voltage regulation, voltage reference, and surge protection in electronic circuits. It can be used in power supplies, audio equipment, and other electronic devices that require stable voltage regulation.

Q & A

  1. What is the Zener voltage of the BZX79B5V6 A0G? The Zener voltage is 5.6V with a tolerance of ±2%.
  2. What is the power dissipation of the BZX79B5V6 A0G? The power dissipation is 500 mW.
  3. What is the package type of the BZX79B5V6 A0G? The package type is DO-35 (Through Hole).
  4. What is the Zener impedance of the BZX79B5V6 A0G at IZT? The Zener impedance (ZZT) at IZT is 40 Ω.
  5. What is the leakage current (IZK) of the BZX79B5V6 A0G? The leakage current (IZK) is 1.0 μA.
  6. Is the BZX79B5V6 A0G environmentally friendly? Yes, it uses a green compound for environmental compliance.
  7. What are the typical applications of the BZX79B5V6 A0G? It is used in voltage regulation, voltage reference, and surge protection in electronic circuits.
  8. Can the BZX79B5V6 A0G be used in high-power applications? It is suitable for applications up to 500 mW.
  9. How is the Zener voltage measured for the BZX79B5V6 A0G? The Zener voltage is measured under pulse conditions such that TJ is no more than 2°C above TA.
  10. Is the BZX79B5V6 A0G suitable for medical or life-saving applications? No, it is not designed for use in medical, life-saving, or life-sustaining applications.

Product Attributes

Voltage - Zener (Nom) (Vz):5.6 V
Tolerance:±2%
Power - Max:500 mW
Impedance (Max) (Zzt):40 Ohms
Current - Reverse Leakage @ Vr:2 mA @ 1 V
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 100 mA
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
0 Remaining View Similar

In Stock

-
77

Please send RFQ , we will respond immediately.

Same Series
BZX79B10 A0G
BZX79B10 A0G
DIODE ZENER 10V 500MW DO35
BZX79B12 A0G
BZX79B12 A0G
DIODE ZENER 12V 500MW DO35
BZX79B13 A0G
BZX79B13 A0G
DIODE ZENER 13V 500MW DO35
BZX79B15 A0G
BZX79B15 A0G
DIODE ZENER 15V 500MW DO35
BZX79B20 A0G
BZX79B20 A0G
DIODE ZENER 20V 500MW DO35
BZX79B27 A0G
BZX79B27 A0G
DIODE ZENER 27V 500MW DO35
BZX79B4V3 A0G
BZX79B4V3 A0G
DIODE ZENER 4.3V 500MW DO35
BZX79B51 A0G
BZX79B51 A0G
DIODE ZENER 51V 500MW DO35
BZX79B5V6 A0G
BZX79B5V6 A0G
DIODE ZENER 5.6V 500MW DO35
BZX79B6V8 A0G
BZX79B6V8 A0G
DIODE ZENER 6.8V 500MW DO35
BZX79B75 A0G
BZX79B75 A0G
DIODE ZENER 75V 500MW DO35
BZX79B7V5 A0G
BZX79B7V5 A0G
DIODE ZENER 7.5V 500MW DO35

Similar Products

Part Number BZX79B5V6 A0G BZX79B3V6 A0G BZX79B56 A0G BZX79B5V1 A0G
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active Active Active
Voltage - Zener (Nom) (Vz) 5.6 V 3.6 V 56 V 5.1 V
Tolerance ±2% ±2% ±2% ±2%
Power - Max 500 mW 500 mW 500 mW 500 mW
Impedance (Max) (Zzt) 40 Ohms 90 Ohms 200 Ohms 60 Ohms
Current - Reverse Leakage @ Vr 2 mA @ 1 V 1 mA @ 15 V 39.2 mA @ 50 mV 2 mA @ 2 V
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 100 mA 1.5 V @ 100 mA 1.5 V @ 100 mA 1.5 V @ 100 mA
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package DO-35 DO-35 DO-35 DO-35

Related Product By Categories

BZX84-B2V7/DG/B3215
BZX84-B2V7/DG/B3215
NXP USA Inc.
DIODE ZENER
BZX84C43-AQ
BZX84C43-AQ
Diotec Semiconductor
DIODE ZENER 43V 300MW SOT23-3
MMSZ5247BT1G
MMSZ5247BT1G
onsemi
DIODE ZENER 17V 500MW SOD123
MMSZ4698T1G
MMSZ4698T1G
onsemi
DIODE ZENER 11V 500MW SOD123
1SMB5933BT3G
1SMB5933BT3G
onsemi
DIODE ZENER 22V 3W SMB
BZX585-B8V2,135
BZX585-B8V2,135
Nexperia USA Inc.
DIODE ZENER 8.2V 300MW SOD523
SZMM3Z6V8T1G
SZMM3Z6V8T1G
onsemi
DIODE ZENER 6.8V 300MW SOD323
BZX84B3V3W_R1_00001
BZX84B3V3W_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX384B16-HE3-18
BZX384B16-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 200MW SOD323
BZX84-C5V1/DG/B3R
BZX84-C5V1/DG/B3R
Nexperia USA Inc.
DIODE ZENER 5.1V 250MW TO236AB
PDZ5.6B-QX
PDZ5.6B-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BZX384-C3V3/ZLX
BZX384-C3V3/ZLX
NXP USA Inc.
DIODE ZENER 3.3V 300MW SOD323

Related Product By Brand

BZW06-15B B0G
BZW06-15B B0G
Taiwan Semiconductor Corporation
TVS DIODE 15.3VWM 32.5VC DO204AC
BAS40 RFG
BAS40 RFG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 200MA SOT23
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
MUR420SH
MUR420SH
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
MUR420S V7G
MUR420S V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N5406G B0G
1N5406G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
MUR460S M6
MUR460S M6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
BZX84C6V2 RFG
BZX84C6V2 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 300MW SOT23
BZX79C15 A0G
BZX79C15 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 500MW DO35
BC807-25 RFG
BC807-25 RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT23
BC847AW RFG
BC847AW RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT323